SHENZHENFREESCALE SQD25N06-22L

SQD25N06-22L
Automotive N-Channel
60 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
VDS (V)
60
RDS(on) () at VGS = 10 V
0.022
RDS(on) () at VGS = 4.5 V
0.033
ID (A)
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
25
Configuration
Single
• TrenchFET® Power MOSFET
• Package with Low Thermal Resistance
• 100 % Rg and UIS Tested
D
TO-252
• AEC-Q101 Qualifiedd
• Compliant to RoHS Directive 2002/95/EC
G
Drain Connected to Tab
G
D
S
S
Top View
N-Channel MOSFET
ORDERING INFORMATION
Package
TO-252
Lead (Pb)-free and Halogen-free
SQD25N06-22L-GE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
Drain-Source Voltage
VDS
60
Gate-Source Voltage
VGS
± 20
Continuous Drain Current
TC = 25 °Ca
TC = 125 °C
Continuous Source Current (Diode Conduction)a
Pulsed Drain Currentb
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipationb
L = 0.1 mH
TC = 25 °C
TC = 125 °C
Operating Junction and Storage Temperature Range
ID
V
25
20
IS
25
IDM
100
IAS
24
EAS
28
PD
UNIT
62
20
A
mJ
W
TJ, Tstg
- 55 to + 175
°C
SYMBOL
LIMIT
UNIT
RthJA
50
RthJC
2.4
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient
Junction-to-Case (Drain)
PCB Mountc
°C/W
Notes
a. Package limited.
b. Pulse test; pulse width  300 μs, duty cycle  2 %.
c. When mounted on 1" square PCB (Fr-4 material).
d. Parametric verification ongoing.
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SQD25N06-22L
Automotive N-Channel
60 V (D-S) 175 °C MOSFET
SPECIFICATIONS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
Gate-Source Leakage
60
-
-
1.5
2.0
2.5
VDS = 0 V, VGS = ± 20 V
IDSS
On-State Drain Currenta
ID(on)
Drain-Source On-State Resistancea
Forward
VGS = 0 V, ID = 250 μA
VDS = VGS, ID = 250 μA
IGSS
Zero Gate Voltage Drain Current
Transconductancea
VDS
VGS(th)
RDS(on)
gfs
-
-
± 100
VGS = 0 V
VDS = 60 V
-
-
1.0
VGS = 0 V
VDS = 60 V, TJ = 125 °C
-
-
50
VGS = 0 V
VDS = 60 V, TJ = 175 °C
-
-
250
VGS = 10 V
VDS5 V
25
-
-
VGS = 10 V
ID = 20 A
-
0.018
0.022
VGS = 10 V
ID = 20 A, TJ = 125 °C
-
-
0.039
VGS = 10 V
ID = 20 A, TJ = 175 °C
-
-
0.049
VGS = 4.5 V
ID = 20 A, TJ = 25 °C
-
0.027
0.033
-
32
-
-
1580
1975
-
305
382
-
130
163
VDS = 15 V, ID = 12 A
V
nA
μA
A

S
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Chargec
Qg
Gate-Source Chargec
Qgs
Gate-Drain Chargec
Qgd
Gate Resistance
Turn-On Delay Timec
Rise Timec
Turn-Off Delay Timec
Fall Timec
Source-Drain Diode Ratings and
Rg
VGS = 0 V
VGS = 10 V
VDS = 25 V, f = 1 MHz
VDS = 30 V, ID = 25 A
f = 1 MHz
td(on)
tr
td(off)
VDD = 30 V, RL = 1.2 
ID  25 A, VGEN = 10 V, Rg = 1 
tf
-
33
50
-
5.3
-
-
6.8
-
1.1
2.2
3.3
-
8
12
pF
nC

-
10
15
-
24
36
-
6
9
-
-
100
A
-
0.9
1.5
V
ns
Characteristicsb
Pulsed Currenta
ISM
Forward Voltage
VSD
IF = 25 A, VGS = 0 V
Notes
a. Pulse test; pulse width  300 μs, duty cycle  2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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SQD25N06-22L
Automotive N-Channel
60 V (D-S) 175 °C MOSFET
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
30
30
VGS = 10 V thru 5 V
24
ID - Drain Current (A)
ID - Drain Current (A)
24
18
VGS = 4 V
12
18
TC = 125 °C
12
25 °C
6
6
VGS = 3 V
- 55 °C
0
0
0
2
4
6
8
0
10
2
4
6
8
VDS - Drain-to Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
10
0.10
50
40
RDS(on) - On-Resistance ()
gfs - Transconductance (S)
TC = - 55 °C
25 °C
30
125 °C
20
10
0.08
0.06
0.04
VGS = 4.5 V
0.02
VGS = 10 V
0
0
0
6
12
18
24
30
0
6
12
ID - Drain Current (A)
80
ID = 12 A
VDS - Drain-to-Source Voltage (V)
ID = 10 mA
2.1
RDS(on) - On-Resistance
(Normalized)
30
On-Resistance vs. Drain Current
2.5
VGS = 10 V
1.7
VGS = 4.5 V
1.3
0.9
- 25
0
25
50
75
100
125
150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
3/9
24
ID - Drain Current (A)
Transconductance
0.5
- 50
18
175
76
72
68
64
60
- 50
- 25
0
25
50
75
100
125
150
175
TJ - Junction Temperature (°C)
Drain Source Breakdown vs. Junction Temperature
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SQD25N06-22L
Automotive N-Channel
60 V (D-S) 175 °C MOSFET
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
0.25
100
TJ = 150 °C
0.20
1
RDS(on) - On-Resistance
IS - Source Current (A)
10
TJ = 25 °C
0.1
0.15
0.10
0.01
0.05
0.001
0
0
0.2
0.4
0.6
0.8
1.0
1.2
TJ = 150 °C
TJ = 25 °C
0
2
4
6
8
10
VSD - Source-to-Drain Voltage (V)
VGS - Gate-to-Source Voltage (V)
Source Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
3000
10
ID = 25 A
VGS - Gate-to-Source Voltage (V)
C - Capacitance (pF)
2500
2000
Ciss
1500
1000
Coss
500
Crss
0
0
8
VDS = 30 V
6
4
2
0
10
20
30
40
50
0
60
5
V DS - Drain-to-Source Voltage (V)
10
15
20
25
30
Qg - Total Gate Charge (nC)
Capacitance
Gate Charge
0.6
VGS(th) - Variance (V)
0.3
0
- 0.3
ID = 5 mA
- 0.6
ID = 250 µA
- 0.9
- 1.2
- 50
- 25
0
25
50
75
100
125
150
175
TJ - Temperature (°C)
Threshold Voltage
4/9
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35
SQD25N06-22L
Automotive N-Channel
60 V (D-S) 175 °C MOSFET
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
IDM Limited
100
ID - Drain Current (A)
Limited by RDS(on)*
10
100 µs
ID Limited
1 ms
10 ms
100 ms
1 s, 10 s, DC
1
0.1
TC = 25 °C
Single Pulse
0.01
0.01
BVDSS Limited
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10-4
10-3
10-2
10-1
1
10
100
1000
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
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SQD25N06-22L
Automotive N-Channel
60 V (D-S) 175 °C MOSFET
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10 -4
10 -3
10 -2
10 -1
1
10
100
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Note
• The characteristics shown in the two graphs
- Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C)
- Normalized Transient Thermal Impedance Junction-to-Case (25 °C)
are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single
pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part
mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities
can widely vary depending on actual application parameters and operating conditions.
6/9
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SQD25N06-22L
Automotive N-Channel
60 V (D-S) 175 °C MOSFET
TO-252AA CASE OUTLINE
E
A
MILLIMETERS
C1
e
b1
D1
e1
E1
L
gage plane height (0.5 mm)
L1
b
L3
H
D
L2
b2
C
A2
A1
INCHES
DIM.
MIN.
MAX.
MIN.
MAX.
A
2.21
2.38
0.087
0.094
A1
0.89
1.14
0.035
0.045
A2
0.030
0.127
0.001
0.005
b
0.71
0.88
0.028
0.035
b1
0.76
1.14
0.030
0.045
b2
5.23
5.44
0.206
0.214
C
0.46
0.58
0.018
0.023
C1
0.46
0.58
0.018
0.023
D
5.97
6.22
0.235
0.245
D1
4.10
4.45
0.161
0.175
E
6.48
6.73
0.255
0.265
E1
4.49
5.50
0.177
0.217
e
e1
2.28 BSC
4.57 BSC
0.090 BSC
0.180 BSC
H
9.65
10.41
0.380
L
1.40
1.78
0.055
0.070
L1
0.64
1.02
0.025
0.040
L2
0.89
1.27
0.035
0.050
L3
1.15
1.52
0.040
0.060
ECN: T11-0110-Rev. L, 18-Apr-11
DWG: 5347
Note
• Dimension L3 is for reference only.
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0.410
SQD25N06-22L
Automotive N-Channel
60 V (D-S) 175 °C MOSFET
RECOMMENDED MINIMUM PADS FOR DPAK (TO-252)
0.224
0.243
0.087
(2.202)
0.090
(2.286)
(10.668)
0.420
(6.180)
(5.690)
0.180
0.055
(4.572)
(1.397)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
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SQD25N06-22L
Automotive N-Channel
60 V (D-S) 175 °C MOSFET
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
freestyle Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on it s or their behalf (collectively,
“freestyle”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
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the continuing production of any product. To the maximum extent permitted by applicable law, Vi shay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation specia l,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
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requirements that are often placed on freestyle products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsib ility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specification s may vary in different applications an d performance may vary over time. All
operating parameters, including typical pa rameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify freestyle’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, freestyle products are not designed for use in medical, life-saving, or life-sustaining
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Material Category Policy
freestyle Intertechnology, Inc. hereby certi fies that all its products that are id entified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwis e specified as non-compliant.
Please note that some freestyle documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
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