SQD30N05-20L Automotive N-Channel 55 V (D-S) 175 °C MOSFET PRODUCT SUMMARY VDS (V) 55 RDS(on) () at VGS = 10 V 0.020 RDS(on) () at VGS = 4.5 V 0.026 ID (A) FEATURES 30 Configuration • TrenchFET® Power MOSFET • AEC-Q101 Qualifiedd Single D • 100 % Rg and UIS Tested TO-252 • Material categorization: For definitions of compliance please see www.freescale.net.cn G Drain Connected to Tab G D S S Top View N-Channel MOSFET ORDERING INFORMATION Package TO-252 Lead (Pb)-free and Halogen-free SQD30N05-20L-GE3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL VDS LIMIT Drain-Source Voltage Gate-Source Voltage VGS ± 20 Continuous Drain Current TC = 25 °Ca TC = 125 °C Continuous Source Current (Diode Conduction)a Pulsed Drain Currentb Single Pulse Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipationb L = 0.1 mH TC = 25 °C TC = 125 °C Operating Junction and Storage Temperature Range ID 55 V 30 19 IS 30 IDM 120 IAS 20 EAS 20 PD UNIT 50 16 A mJ W TJ, Tstg - 55 to + 175 °C SYMBOL LIMIT UNIT RthJA 60 RthJC 3 THERMAL RESISTANCE RATINGS PARAMETER Junction-to-Ambient Junction-to-Case (Drain) PCB Mountc °C/W Notes a. Package limited. b. Pulse test; pulse width 300 μs, duty cycle 2 %. c. When mounted on 1" square PCB (FR-4 material). d. Parametric verification ongoing. 1/9 www.freescale.net.cn SQD30N05-20L Automotive N-Channel 55 V (D-S) 175 °C MOSFET SPECIFICATIONS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static VDS VGS = 0 V, ID = 250 μA 55 - - VGS(th) VDS = VGS, ID = 250 μA 1.5 2 2.5 Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V - - ± 100 Zero Gate Voltage Drain Current IDSS Drain-Source Breakdown Voltage Gate-Source Threshold Voltage On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductanceb ID(on) RDS(on) gfs VGS = 0 V VDS = 55 V - - 1 VGS = 0 V VDS = 55 V, TJ = 125 °C - - 50 VGS = 0 V VDS = 55 V, TJ = 175 °C - - 250 VGS = 5 V VDS5 V 30 - - VGS = 10 V ID = 20 A - 0.016 0.020 VGS = 10 V ID = 20 A, TJ = 125 °C - - 0.035 VGS = 10 V ID = 20 A, TJ = 175 °C - - 0.043 VGS = 4.5 V ID = 15 A - 0.021 0.026 - 34 - VDS = 15 V, ID = 20 A V nA μA A S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Total Gate Chargec Gate-Source Gate-Drain Chargec Chargec Gate Resistance Turn-On Delay Timec Rise Timec Turn-Off Delay Timec Fall Timec - 938 1175 - 203 255 Crss - 86 110 Qg - 12 18 - 4.1 - Qgs VGS = 0 V VGS = 5 V VDS = 25 V, f = 1 MHz VDS = 25 V, ID = 35 A Qgd Rg td(off) nC - 4.8 - f = 1 MHz 1.40 2.89 4.50 - 7 11 VDD = 25 V, RL = 0.71 ID 35 A, VGEN = 10 V, Rg = 1 - 10 15 - 18 27 - 5 8 - - 120 A - 1.2 1.5 V td(on) tr pF tf ns Source-Drain Diode Ratings and Characteristicsb Pulsed Currenta ISM Forward Voltage VSD IF = 80 A, VGS = 0 V Notes a. Pulse test; pulse width 300 μs, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 2/9 www.freescale.net.cn SQD30N05-20L Automotive N-Channel 55 V (D-S) 175 °C MOSFET TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 40 40 VGS = 10 V thru 4 V 32 I D - Drain Current (A) ID - Drain Current (A) 32 24 16 8 24 16 TC = 25 °C 8 VGS = 3 V TC = 125 °C TC = - 55 °C 0 0 0 2 4 6 8 VDS - Drain-to-Source Voltage (V) 10 0 1 2 3 4 5 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 50 0.10 0.08 RDS(on) - On-Resistance (Ω) g fs - Transconductance (S) TC = - 55 °C 40 TC = 25 °C 30 20 TC = 125 °C 10 0.06 0.04 VGS = 4.5 V 0.02 VGS = 10 V 0 0.00 0 5 10 15 20 0 25 8 ID - Drain Current (A) Transconductance 24 32 40 On-Resistance vs. Drain Current 100 2.5 ID = 20 A 2.1 10 VGS = 10 V I S - Source Current (A) R DS(on) - On-Resistance (Normalized) 16 ID - Drain Current (A) 1.7 1.3 0.9 TJ = 150 °C 1 TJ = 25 °C 0.1 0.01 0.5 - 50 - 25 0 25 50 75 100 125 150 175 0.001 0.0 0.2 0.4 0.6 0.8 1.0 TJ - Junction Temperature (°C) VSD - Source-to-Drain Voltage (V) On-Resistance vs. Junction Temperature Source Drain Diode Forward Voltage 3/9 1.2 www.freescale.net.cn SQD30N05-20L Automotive N-Channel 55 V (D-S) 175 °C MOSFET TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 6 1500 ID = 35 A 5 VGS - Gate-to-Source Voltage (V) C - Capacitance (pF) 1200 Ciss 900 600 Coss 300 Crss VDS = 25 V 4 3 2 1 0 0 0 5 10 15 20 25 30 35 40 45 50 55 0 3 VDS - Drain-to-Source Voltage (V) 6 9 12 Qg - Total Gate Charge (nC) Capacitance Gate Charge 0.6 0.20 0.3 VGS(th) Variance (V) 0.16 0.12 0.08 0 2 4 6 8 - 0.3 ID = 5 mA - 0.6 - 0.9 TJ = 25 °C 0.00 0 ID = 250 µA TJ = 150 °C 0.04 - 1.2 - 50 10 - 25 0 25 50 75 100 VGS - Gate-to-Source Voltage (V) TJ - Temperature (°C) On-Resistance vs. Gate-to-Source Voltage Threshold Voltage 125 150 175 70 ID = 1 mA VDS - Drain-to-Source Voltage (V) R DS(on) - On-Resistance (Ω) 15 67 64 61 58 55 - 50 - 25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (°C) Drain Source Breakdown vs. Junction Temperature 4/9 www.freescale.net.cn SQD30N05-20L Automotive N-Channel 55 V (D-S) 175 °C MOSFET THERMAL RATINGS (TA = 25 °C, unless otherwise noted) 1000 IDM Limited 100 ID - Drain Current (A) ID Limited 100 μs 10 1 ms 10 ms 100 ms 10 s, 1 s, DC 1 Limited by RDS(on)* 0.1 0.01 0.01 BVDSS Limited TC = 25 °C Single Pulse 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 0.0001 0.001 0.01 0.1 1 10 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 5/9 www.freescale.net.cn SQD30N05-20L Automotive N-Channel 55 V (D-S) 175 °C MOSFET THERMAL RATINGS (TA = 25 °C, unless otherwise noted) 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 Single Pulse 0.05 0.02 0.01 0.0001 0.001 0.01 0.1 1 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Note • The characteristics shown in the two graphs - Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C) - Normalized Transient Thermal Impedance Junction-to-Case (25 °C) are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities can widely vary depending on actual application parameters and operating conditions. 6/9 www.freescale.net.cn SQD30N05-20L Automotive N-Channel 55 V (D-S) 175 °C MOSFET TO-252AA CASE OUTLINE E A MILLIMETERS C1 e b1 D1 e1 E1 L gage plane height (0.5 mm) L1 b L3 H D L2 b2 C A2 A1 INCHES DIM. MIN. MAX. MIN. MAX. A 2.21 2.38 0.087 0.094 A1 0.89 1.14 0.035 0.045 A2 0.030 0.127 0.001 0.005 b 0.71 0.88 0.028 0.035 b1 0.76 1.14 0.030 0.045 b2 5.23 5.44 0.206 0.214 C 0.46 0.58 0.018 0.023 C1 0.46 0.58 0.018 0.023 D 5.97 6.22 0.235 0.245 D1 4.10 4.45 0.161 0.175 E 6.48 6.73 0.255 0.265 E1 4.49 5.50 0.177 0.217 e e1 2.28 BSC 4.57 BSC 0.090 BSC 0.180 BSC H 9.65 10.41 0.380 L 1.40 1.78 0.055 0.070 L1 0.64 1.02 0.025 0.040 L2 0.89 1.27 0.035 0.050 L3 1.15 1.52 0.040 0.060 ECN: T11-0110-Rev. L, 18-Apr-11 DWG: 5347 Note • Dimension L3 is for reference only. 7/9 www.freescale.net.cn 0.410 SQD30N05-20L Automotive N-Channel 55 V (D-S) 175 °C MOSFET RECOMMENDED MINIMUM PADS FOR DPAK (TO-252) 0.224 0.243 0.087 (2.202) 0.090 (2.286) (10.668) 0.420 (6.180) (5.690) 0.180 0.055 (4.572) (1.397) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index 8/9 Return to Index www.freescale.net.cn SQD30N05-20L Automotive N-Channel 55 V (D-S) 175 °C MOSFET Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. freestyle Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on it s or their behalf (collectively, “freestyle”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. freestyle makes no warranty, representation or guarantee regarding the suitabilit y of the products for any particular purpose or the continuing production of any product. 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