SQD50P06-15L Automotive P-Channel 60 V (D-S) 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET® Power MOSFET - 60 RDS(on) () at VGS = - 10 V 0.0155 RDS(on) () at VGS = - 4.5 V 0.0200 ID (A) • Package with Low Thermal Resistance • 100 % Rg and UIS Tested • AEC-Q101 Qualified - 50 Configuration Single TO-252 S • Material categorization: For definitions of compliance please see www.freescale.net.cn G Drain Connected to Tab G D S D P-Channel MOSFET Top View ORDERING INFORMATION Package TO-252 Lead (Pb)-free and Halogen-free SQD50P06-15L-GE3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS - 60 Gate-Source Voltage VGS ± 20 TC = 25 °C Continuous Drain Currenta Continuous Source Current (Diode TC = 125 °C Conduction)a Pulsed Drain Currentb Single Pulse Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipationb L = 0.1 mH TC = 25 °C TC = 125 °C Operating Junction and Storage Temperature Range ID V - 50 - 38 IS - 50 IDM - 200 IAS - 52 EAS 135 PD UNIT 136 45 A mJ W TJ, Tstg - 55 to + 175 °C SYMBOL LIMIT UNIT THERMAL RESISTANCE RATINGS PARAMETER Junction-to-Ambient Junction-to-Case (Drain) PCB Mountc RthJA 50 RthJC 1.1 °C/W Notes a. Package limited. b. Pulse test; pulse width 300 μs, duty cycle 2 %. c. When mounted on 1" square PCB (FR-4 material). 1/8 www.freescale.net.cn SQD50P06-15L Automotive P-Channel 60 V (D-S) 175 °C MOSFET SPECIFICATIONS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Source Leakage VGS = 0 V, ID = - 250 μA - 60 - - VDS = VGS, ID = - 250 μA - 1.5 - - 2.5 VDS = 0 V, VGS = ± 20 V - - ± 100 - - -1 IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductancea VDS VGS(th) RDS(on) gfs VGS = 0 V VDS = - 60 V VGS = 0 V VDS = - 60 V, TJ = 125 °C - - - 50 VGS = 0 V VDS = - 60 V, TJ = 175 °C - - - 150 VGS = - 10 V VDS- 5 V - 50 - - VGS = - 10 V ID = - 17 A - 0.0135 0.0155 VGS = - 10 V ID = - 50 A, TJ = 125 °C - - 0.026 VGS = - 10 V ID = - 50 A, TJ = 175 °C - - 0.032 VGS = - 4.5 V ID = - 14 A VDS = - 15 V, ID = - 17 A - 0.017 0.020 - 50 - - 4730 5910 V nA μA A S Dynamicb Input Capacitance Ciss Output Capacitance Coss - 485 606 Reverse Transfer Capacitance Crss - 330 410 Total Gate Chargec Qg - 98 150 Gate-Source Chargec Gate-Drain Chargec Gate Resistance Turn-On Delay Timec Rise Timec Turn-Off Delay Qgs Fall Timec Source-Drain Diode Ratings and VGS = - 10 V VDS = - 25 V, f = 1 MHz VDS = - 30 V, ID = - 50 A Qgd Rg f = 1 MHz td(on) tr Timec VGS = 0 V td(off) VDD = - 30 V, RL = 0.6 ID - 50 A, VGEN = - 10 V, Rg = 6.0 tf pF - 15 23 - 21 32 nC 1.47 2.9 4.42 - 15 18 - 12 16 - 112 125 - 39 48 - - - 200 A - - 0.8 - 1.5 V ns Characteristicsb Pulsed Currenta ISM Forward Voltage VSD IF = - 50 A, VGS = 0 V Notes a. Pulse test; pulse width 300 μs, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 2/8 www.freescale.net.cn SQD50P06-15L Automotive P-Channel 60 V (D-S) 175 °C MOSFET TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 80 80 VGS = 10 V thru 4 V 70 70 60 I D - Drain Current (A) I D - Drain Current (A) 60 50 40 30 3V 20 50 40 30 TC = 125 ° C 20 10 25 ° C 10 - 55 °C 0 0 1 2 3 4 0 0.0 5 0.5 VDS - Drain-to-Source Voltage (V) 1.0 Output Characteristics 2.0 2.5 3.0 3.5 4.0 Transfer Characteristics 0.05 100 R DS(on) - On-Resistance () 25 °C TC = - 55 °C 80 gfs - Transconductance (S) 1.5 VGS - Gate-to-Source Voltage (V) 125 °C 60 40 20 0.04 0.03 VGS = 4.5 V 0.02 VGS = 10 V 0.01 0 0 0 10 20 30 40 50 0 60 16 32 VGS - Gate-to-Source Voltage (V) 48 64 80 ID - Drain Current (A) Transconductance On-Resistance vs. Drain Current 10 6000 Ciss 5000 C - Capacitance (pF) VGS - Gate-to-Source Voltage (V) ID = 14.4 A 4000 3000 2000 Coss 1000 8 VDS = 30 V 6 4 2 Crss 0 0 0 10 20 30 40 50 VDS - Drain-to-Source Voltage (V) Capacitance 3/8 60 0 10 20 30 40 50 60 70 80 Qg - Total Gate Charge (nC) Gate Charge www.freescale.net.cn 90 100 SQD50P06-15L Automotive P-Channel 60 V (D-S) 175 °C MOSFET TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 100 2.0 VGS = 10 V ID = 17 A I S - Source Current (A) 1.6 (Normalized) R DS(on) - On-Resistance 1.8 1.4 1.2 1.0 TJ = 150 °C TJ = 25 °C 10 0.8 0.6 - 50 1 - 25 0 25 50 75 100 125 150 0.0 175 0.3 0.6 0.9 1.2 VSD - Source-to-Drain Voltage (V) TJ - Junction Temperature (°C) Source Drain Diode Forward Voltage On-Resistance vs. Junction Temperature THERMAL RATINGS (TA = 25 °C, unless otherwise noted) IDM Limited 100 100 μs ID - Drain Current (A) Limited by R DS(on)* ID Limited 10 1 ms 10 ms, 100 ms, 1 s, 10 s, DC 1 0.1 TC = 25 °C Single Pulse BVDSS Limited 0.01 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area 4/8 www.freescale.net.cn 1.5 SQD50P06-15L Automotive P-Channel 60 V (D-S) 175 °C MOSFET THERMAL RATINGS (TA = 25 °C, unless otherwise noted) 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 Notes: 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 50 °C/W 3. TJM - TA = PDMZthJA(t) 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 4. Surface Mounted 10 -1 1 100 10 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 Square Wave Pulse Duration (s) 10-1 1 Normalized Thermal Transient Impedance, Junction-to-Case Note • The characteristics shown in the two graphs - Normalized Transient Thermal Impedance Junction to Ambient (25 °C) - Normalized Transient Thermal Impedance Junction to Case (25 °C) are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities can widely vary depending on actual application parameters and operating conditions. 5/8 www.freescale.net.cn SQD50P06-15L Automotive P-Channel 60 V (D-S) 175 °C MOSFET TO-252AA CASE OUTLINE E A MILLIMETERS C1 e b1 D1 e1 E1 L gage plane height (0.5 mm) L1 b L3 H D L2 b2 C A2 A1 INCHES DIM. MIN. MAX. MIN. MAX. A 2.21 2.38 0.087 0.094 A1 0.89 1.14 0.035 0.045 A2 0.030 0.127 0.001 0.005 b 0.71 0.88 0.028 0.035 b1 0.76 1.14 0.030 0.045 b2 5.23 5.44 0.206 0.214 C 0.46 0.58 0.018 0.023 C1 0.46 0.58 0.018 0.023 D 5.97 6.22 0.235 0.245 D1 4.10 4.45 0.161 0.175 E 6.48 6.73 0.255 0.265 E1 4.49 5.50 0.177 0.217 e e1 2.28 BSC 4.57 BSC 0.090 BSC 0.180 BSC H 9.65 10.41 0.380 L 1.40 1.78 0.055 0.070 L1 0.64 1.02 0.025 0.040 L2 0.89 1.27 0.035 0.050 L3 1.15 1.52 0.040 0.060 ECN: T11-0110-Rev. L, 18-Apr-11 DWG: 5347 Note • Dimension L3 is for reference only. 6/8 www.freescale.net.cn 0.410 SQD50P06-15L Automotive P-Channel 60 V (D-S) 175 °C MOSFET RECOMMENDED MINIMUM PADS FOR DPAK (TO-252) 0.224 0.243 0.087 (2.202) 0.090 (2.286) (10.668) 0.420 (6.180) (5.690) 0.180 0.055 (4.572) (1.397) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index 7/8 www.freescale.net.cn SQD50P06-15L Automotive P-Channel 60 V (D-S) 175 °C MOSFET Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. freestyle Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on it s or their behalf (collectively, “freestyle”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. freestyle makes no warranty, representation or guarantee regarding the suitabilit y of the products for any particular purpose or the continuing production of any product. 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