SHENZHENFREESCALE SQD50P06-15L

SQD50P06-15L
Automotive P-Channel
60 V (D-S) 175 °C MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
• TrenchFET® Power MOSFET
- 60
RDS(on) () at VGS = - 10 V
0.0155
RDS(on) () at VGS = - 4.5 V
0.0200
ID (A)
• Package with Low Thermal Resistance
• 100 % Rg and UIS Tested
• AEC-Q101 Qualified
- 50
Configuration
Single
TO-252
S
• Material categorization:
For definitions of compliance please see
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G
Drain Connected to Tab
G
D
S
D
P-Channel MOSFET
Top View
ORDERING INFORMATION
Package
TO-252
Lead (Pb)-free and Halogen-free
SQD50P06-15L-GE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
Drain-Source Voltage
VDS
- 60
Gate-Source Voltage
VGS
± 20
TC = 25 °C
Continuous Drain Currenta
Continuous Source Current (Diode
TC = 125 °C
Conduction)a
Pulsed Drain Currentb
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipationb
L = 0.1 mH
TC = 25 °C
TC = 125 °C
Operating Junction and Storage Temperature Range
ID
V
- 50
- 38
IS
- 50
IDM
- 200
IAS
- 52
EAS
135
PD
UNIT
136
45
A
mJ
W
TJ, Tstg
- 55 to + 175
°C
SYMBOL
LIMIT
UNIT
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient
Junction-to-Case (Drain)
PCB
Mountc
RthJA
50
RthJC
1.1
°C/W
Notes
a. Package limited.
b. Pulse test; pulse width  300 μs, duty cycle  2 %.
c. When mounted on 1" square PCB (FR-4 material).
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SQD50P06-15L
Automotive P-Channel
60 V (D-S) 175 °C MOSFET
SPECIFICATIONS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
Gate-Source Leakage
VGS = 0 V, ID = - 250 μA
- 60
-
-
VDS = VGS, ID = - 250 μA
- 1.5
-
- 2.5
VDS = 0 V, VGS = ± 20 V
-
-
± 100
-
-
-1
IGSS
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currenta
ID(on)
Drain-Source On-State Resistancea
Forward Transconductancea
VDS
VGS(th)
RDS(on)
gfs
VGS = 0 V
VDS = - 60 V
VGS = 0 V
VDS = - 60 V, TJ = 125 °C
-
-
- 50
VGS = 0 V
VDS = - 60 V, TJ = 175 °C
-
-
- 150
VGS = - 10 V
VDS- 5 V
- 50
-
-
VGS = - 10 V
ID = - 17 A
-
0.0135
0.0155
VGS = - 10 V
ID = - 50 A, TJ = 125 °C
-
-
0.026
VGS = - 10 V
ID = - 50 A, TJ = 175 °C
-
-
0.032
VGS = - 4.5 V
ID = - 14 A
VDS = - 15 V, ID = - 17 A
-
0.017
0.020
-
50
-
-
4730
5910
V
nA
μA
A

S
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
-
485
606
Reverse Transfer Capacitance
Crss
-
330
410
Total Gate Chargec
Qg
-
98
150
Gate-Source
Chargec
Gate-Drain Chargec
Gate Resistance
Turn-On Delay Timec
Rise Timec
Turn-Off Delay
Qgs
Fall Timec
Source-Drain Diode Ratings and
VGS = - 10 V
VDS = - 25 V, f = 1 MHz
VDS = - 30 V, ID = - 50 A
Qgd
Rg
f = 1 MHz
td(on)
tr
Timec
VGS = 0 V
td(off)
VDD = - 30 V, RL = 0.6 
ID  - 50 A, VGEN = - 10 V, Rg = 6.0 
tf
pF
-
15
23
-
21
32
nC
1.47
2.9
4.42
-
15
18
-
12
16
-
112
125
-
39
48
-
-
- 200
A
-
- 0.8
- 1.5
V

ns
Characteristicsb
Pulsed Currenta
ISM
Forward Voltage
VSD
IF = - 50 A, VGS = 0 V
Notes
a. Pulse test; pulse width  300 μs, duty cycle  2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.




Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.

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SQD50P06-15L
Automotive P-Channel
60 V (D-S) 175 °C MOSFET
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
80
80
VGS = 10 V thru 4 V
70
70
60
I D - Drain Current (A)
I D - Drain Current (A)
60
50
40
30
3V
20
50
40
30
TC = 125 ° C
20
10
25 ° C
10
- 55 °C
0
0
1
2
3
4
0
0.0
5
0.5
VDS - Drain-to-Source Voltage (V)
1.0
Output Characteristics
2.0
2.5
3.0
3.5
4.0
Transfer Characteristics
0.05
100
R DS(on) - On-Resistance ()
25 °C
TC = - 55 °C
80
gfs - Transconductance (S)
1.5
VGS - Gate-to-Source Voltage (V)
125 °C
60
40
20
0.04
0.03
VGS = 4.5 V
0.02
VGS = 10 V
0.01
0
0
0
10
20
30
40
50
0
60
16
32
VGS - Gate-to-Source Voltage (V)
48
64
80
ID - Drain Current (A)
Transconductance
On-Resistance vs. Drain Current
10
6000
Ciss
5000
C - Capacitance (pF)
VGS - Gate-to-Source Voltage (V)
ID = 14.4 A
4000
3000
2000
Coss
1000
8
VDS = 30 V
6
4
2
Crss
0
0
0
10
20
30
40
50
VDS - Drain-to-Source Voltage (V)
Capacitance
3/8
60
0
10
20
30
40
50
60
70
80
Qg - Total Gate Charge (nC)
Gate Charge
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90
100
SQD50P06-15L
Automotive P-Channel
60 V (D-S) 175 °C MOSFET
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
100
2.0
VGS = 10 V
ID = 17 A
I S - Source Current (A)
1.6
(Normalized)
R DS(on) - On-Resistance
1.8
1.4
1.2
1.0
TJ = 150 °C
TJ = 25 °C
10
0.8
0.6
- 50
1
- 25
0
25
50
75
100
125
150
0.0
175
0.3
0.6
0.9
1.2
VSD - Source-to-Drain Voltage (V)
TJ - Junction Temperature (°C)
Source Drain Diode Forward Voltage
On-Resistance vs. Junction Temperature
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
IDM Limited
100
100 μs
ID - Drain Current (A)
Limited by R DS(on)*
ID Limited
10
1 ms
10 ms, 100 ms, 1 s, 10 s, DC
1
0.1
TC = 25 °C
Single Pulse
BVDSS Limited
0.01
0.01
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area
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1.5
SQD50P06-15L
Automotive P-Channel
60 V (D-S) 175 °C MOSFET
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
Notes:
0.1
PDM
0.05
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 50 °C/W
3. TJM - TA = PDMZthJA(t)
0.02
Single Pulse
0.01
10 -4
10 -3
10 -2
4. Surface Mounted
10 -1
1
100
10
1000
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10-4
10-3
10-2
Square Wave Pulse Duration (s)
10-1
1
Normalized Thermal Transient Impedance, Junction-to-Case
Note
• The characteristics shown in the two graphs
- Normalized Transient Thermal Impedance Junction to Ambient (25 °C)
- Normalized Transient Thermal Impedance Junction to Case (25 °C)
are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single
pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part
mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities
can widely vary depending on actual application parameters and operating conditions.









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SQD50P06-15L
Automotive P-Channel
60 V (D-S) 175 °C MOSFET
TO-252AA CASE OUTLINE
E
A
MILLIMETERS
C1
e
b1
D1
e1
E1
L
gage plane height (0.5 mm)
L1
b
L3
H
D
L2
b2
C
A2
A1
INCHES
DIM.
MIN.
MAX.
MIN.
MAX.
A
2.21
2.38
0.087
0.094
A1
0.89
1.14
0.035
0.045
A2
0.030
0.127
0.001
0.005
b
0.71
0.88
0.028
0.035
b1
0.76
1.14
0.030
0.045
b2
5.23
5.44
0.206
0.214
C
0.46
0.58
0.018
0.023
C1
0.46
0.58
0.018
0.023
D
5.97
6.22
0.235
0.245
D1
4.10
4.45
0.161
0.175
E
6.48
6.73
0.255
0.265
E1
4.49
5.50
0.177
0.217
e
e1
2.28 BSC
4.57 BSC
0.090 BSC
0.180 BSC
H
9.65
10.41
0.380
L
1.40
1.78
0.055
0.070
L1
0.64
1.02
0.025
0.040
L2
0.89
1.27
0.035
0.050
L3
1.15
1.52
0.040
0.060
ECN: T11-0110-Rev. L, 18-Apr-11
DWG: 5347
Note
• Dimension L3 is for reference only.
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0.410
SQD50P06-15L
Automotive P-Channel
60 V (D-S) 175 °C MOSFET
RECOMMENDED MINIMUM PADS FOR DPAK (TO-252)
0.224
0.243
0.087
(2.202)
0.090
(2.286)
(10.668)
0.420
(6.180)
(5.690)
0.180
0.055
(4.572)
(1.397)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
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SQD50P06-15L
Automotive P-Channel
60 V (D-S) 175 °C MOSFET
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“freestyle”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
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the continuing production of any product. To the maximum extent permitted by applicable law, Vi shay disclaims (i) any and all
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consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
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product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specification s may vary in different applications an d performance may vary over time. All
operating parameters, including typical pa rameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify freestyle’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
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Material Category Policy
freestyle Intertechnology, Inc. hereby certi fies that all its products that are id entified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
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