SQD90P04-9m4L Automotive P-Channel 40 V (D-S) 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET® Power MOSFET - 40 RDS(on) () at VGS = - 10 V 0.0094 RDS(on) () at VGS = - 4.5 V 0.0160 ID (A) • Package with Low Thermal Resistance • 100 % Rg and UIS Tested • AEC-Q101 Qualifiedd - 90 Configuration • Material categorization: For definitions of compliance please see www.freescale.net.cn Single S TO-252 G Drain Connected to Tab G D D S P-Channel MOSFET Top View ORDERING INFORMATION Package TO-252 Lead (Pb)-free and Halogen-free SQD90P04-9m4L-GE3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS - 40 Gate-Source Voltage VGS ± 20 TC = 25 °C Continuous Drain Currenta Continuous Source Current (Diode TC = 125 °C Conduction)a Pulsed Drain Currentb Single Pulse Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipationb L = 0.1 mH TC = 25 °C TC = 125 °C Operating Junction and Storage Temperature Range ID V - 90 - 52 IS - 100 IDM - 160 IAS - 50 EAS 125 PD UNIT 136 45 A mJ W TJ, Tstg - 55 to + 175 °C SYMBOL LIMIT UNIT THERMAL RESISTANCE RATINGS PARAMETER Junction-to-Ambient Junction-to-Case (Drain) PCB Mountc RthJA 50 RthJC 1.1 °C/W Notes a. Package limited. b. Pulse test; pulse width 300 μs, duty cycle 2 %. c. When mounted on 1" square PCB (FR-4 material). d. Parametric verification ongoing. 1/7 www.freescale.net.cn SQD90P04-9m4L Automotive P-Channel 40 V (D-S) 175 °C MOSFET SPECIFICATIONS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Source Leakage VGS = 0 V, ID = - 250 μA - 40 - - VDS = VGS, ID = - 250 μA - 1.5 - - 2.5 VDS = 0 V, VGS = ± 20 V - - ± 100 - - -1 IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductanceb VDS VGS(th) RDS(on) gfs VGS = 0 V VDS = - 40 V VGS = 0 V VDS = - 40 V, TJ = 125 °C - - - 50 VGS = 0 V VDS = - 40 V, TJ = 175 °C - - - 150 VGS = - 10 V VDS- 5 V - 50 - - VGS = - 10 V ID = - 17 A - 0.0075 0.0094 VGS = - 10 V ID = - 50 A, TJ = 125 °C - - 0.0147 VGS = - 10 V ID = - 50 A, TJ = 175 °C - - 0.0178 VGS = - 4.5 V ID = - 14 A VDS = - 15 V, ID = - 17 A - 0.0130 0.0160 - 46 - - 5339 6675 V nA μA A S Dynamicb Input Capacitance Ciss Output Capacitance Coss - 852 1065 Reverse Transfer Capacitance Crss - 681 855 Total Gate Chargec Qg - 103 155 Gate-Source Chargec Gate-Drain Chargec Gate Resistance Turn-On Delay Timec Rise Timec Turn-Off Delay Qgs Fall Timec Source-Drain Diode Ratings and VGS = - 10 V VDS = - 20 V, f = 1 MHz VDS = - 20 V, ID = - 50 A Qgd Rg f = 1 MHz td(on) tr Timec VGS = 0 V td(off) VDD = - 20 V, RL = 0.4 ID - 50 A, VGEN = - 10 V, Rg = 1 tf pF - 15 - - 21 - nC 1.4 2.8 4.2 - 13 20 - 15 23 - 61 92 - 19 29 - - - 160 A - - 0.95 - 1.5 V ns Characteristicsb Pulsed Currenta ISM Forward Voltage VSD IF = - 50 A, VGS = 0 V Notes a. Pulse test; pulse width 300 μs, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 2/7 www.freescale.net.cn SQD90P04-9m4L Automotive P-Channel 40 V (D-S) 175 °C MOSFET TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 100 100 V GS = 10 V thru 5 V 80 60 ID - Drain Current (A) ID - Drain Current (A) 80 V GS = 4 V 40 20 V GS = 3 V 60 40 T C = 25 °C 20 T C = 125 °C V GS = 2 V, 1 V 0 T C = - 55 °C 0 0 3 6 9 12 VDS - Drain-to-Source Voltage (V) 15 0 1 2 3 4 VGS - Gate-to-Source Voltage (V) Transfer Characteristics Output Characteristics 100 0.05 80 0.04 T C = 25 °C RDS(on) - On-Resistance (Ω) g fs - Transconductance (S) 5 T C = - 55 °C 60 40 T C = 125 °C 20 0.03 0.02 VGS = 4.5 V 0.01 VGS = 10 V 0 0.00 0 16 32 48 ID - Drain Current (A) 64 80 0 20 40 60 80 100 ID - Drain Current (A) On-Resistance vs. Drain Current Transconductance 8000 10 C - Capacitance (pF) 6000 VGS - Gate-to-Source Voltage (V) 7000 Ciss 5000 4000 3000 2000 Coss 1000 ID = 50 A 8 VDS = 20 V 6 4 2 Crss 0 0 0 5 10 15 20 25 30 VDS - Drain-to-Source Voltage (V) Capacitance 3/7 35 40 0 20 40 60 80 100 120 Qg - Total Gate Charge (nC) Gate Charge www.freescale.net.cn SQD90P04-9m4L Automotive P-Channel 40 V (D-S) 175 °C MOSFET TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 100 ID = 24 A 2.0 10 IS - Source Current (A) RDS(on) - On-Resistance (Normalized) 2.3 1.7 V GS = 10 V 1.4 1.1 TJ = 150 °C 1 TJ = 25 °C 0.1 0.01 0.8 0.001 0.5 - 50 - 25 0 25 50 75 100 125 150 0 175 0.2 TJ - Junction Temperature (°C) 1.2 Source Drain Diode Forward Voltage 0.10 1.1 0.08 0.8 VGS(th) Variance (V) ID = 250 μA 0.06 0.04 0.02 T J = 25 °C 0 0 0.5 ID = 5 mA 0.2 - 0.1 T J = 150 °C 2 4 6 8 VGS - Gate-to-Source Voltage (V) - 0.4 - 50 10 - 25 0 On-Resistance vs. Gate-to-Source Voltage 25 50 75 100 TJ - Temperature (°C) 125 150 175 Threshold Voltage - 45 ID = 10 mA VDS - Drain-to-Source Voltage (V) RDS(on) - On-Resistance (Ω) On-Resistance vs. Junction Temperature 0.4 0.6 0.8 1.0 VSD - Source-to-Drain Voltage (V) - 47 - 49 - 51 - 53 - 55 - 50 - 25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (°C) Drain Source Breakdown vs. Junction Temperature 4/7 www.freescale.net.cn SQD90P04-9m4L Automotive P-Channel 40 V (D-S) 175 °C MOSFET THERMAL RATINGS (TA = 25 °C, unless otherwise noted) 1000 IDM Limited 100 μs 10 1 ms 10 ms ID - Drain Current (A) 100 100 ms, 1 s, 10 s, DC Limited by RDS(on)* 1 0.1 0.01 0.01 BVDSS Limited TC = 25 °C Single Pulse 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 10 100 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 5/7 www.freescale.net.cn 1000 SQD90P04-9m4L Automotive P-Channel 40 V (D-S) 175 °C MOSFET THERMAL RATINGS (TA = 25 °C, unless otherwise noted) 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.01 10 -4 0.05 0.02 Single Pulse 10 -3 10 -2 10 -1 1 10 100 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Note • The characteristics shown in the two graphs - Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C) - Normalized Transient Thermal Impedance Junction-to-Case (25 °C) are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. 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