SUD23N06-31 N-Channel 60 V (D-S) 175 °C MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.031 at VGS = 10 V 9.1 0.045 at VGS = 4.5 V 7.6 VDS (V) 60 Qg (Typ.) 6.5 nC • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS TO-252 • DC/DC Converters D G Drain Connected to Tab G D S S Top View Ordering Information: SUD23N06-31-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Limit Drain-Source Voltage VDS 60 Gate-Source Voltage VGS ± 20 TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C 17.1 ID 9.1a 7.6a IDM Continuous Source-Drain Diode Current Single Pulse Avalanche Current Avalanche Energy TC = 25 °C TA = 25 °C L = 0.1 mH TC = 70 °C TA = 25 °C 20.8 IS 3.8a IAS 20 EAS mJ 20 31.25 20 PD W 5.7a 3.6a TA = 70 °C TJ, Tstg Operating Junction and Storage Temperature Range A 50 TC = 25 °C Maximum Power Dissipation V 21.4 TA = 70 °C Pulsed Drain Current Unit °C - 55 to 150 THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient Symbol a Maximum Junction-to-Case Typical Maximum t 10 s RthJA 18 22 Steady State RthJC 3.2 4.0 Notes: a. Surface mounted on 1" x 1" FR4 board, t 10 s. 1/9 www.freescale.net.cn Unit °C/W SUD23N06-31 N-Channel 60 V (D-S) 175 °C MOSFET SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = 250 µA 60 Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS/TJ VDS Temperature Coefficient VGS(th) Temperature Coefficient VGS(th)/TJ Gate-Source Threshold Voltage V 65 ID = 250 µA mV/°C - 6.3 VGS(th) VDS = VGS, ID = 250 µA 3.0 V Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 60 V, VGS = 0 V 1 VDS = 60 V, VGS = 0 V, TJ = 70 °C 20 On-State Drain Currenta ID(on) Drain-Source On-State Resistancea VDS 5 V, VGS = 10 V RDS(on) Forward Transconductancea gfs 1.0 50 µA A VGS = 10 V, ID = 15 A 0.025 0.031 VGS = 4.5 V, ID = 10 A 0.037 0.045 VDS = 15 V, ID = 15 A 20 VDS = 25 V, VGS = 0 V, f = 1 MHz 140 VDS = 30 V, VGS = 10 V, ID = 23 A 11 17 6.5 13 S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance 670 60 VDS = 30 V, VGS = 4.5 V, ID = 23 A f = 1 MHz 1.6 3.2 18 30 250 400 35 55 tf 68 110 td(on) 8 15 td(on) Rise Time VDD = 30 V, RL = 1.3 ID 23 A, VGEN = 4.5 V, Rg = 1 tr Turn-Off Delay Time td(off) Fall Time Turn-On Delay Time Rise Time VDD = 30 V, RL = 1.3 ID 23 A, VGEN = 10 V, Rg = 1 tr Turn-Off Delay Time td(off) Fall Time 3.0 nC 3.0 Rg Turn-On Delay Time pF tf 15 25 30 45 25 40 ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current a IS Pulse Diode Forward Current ISM Body Diode Voltage VSD TC = 25 °C 20.8 50 IS = 15 A 1.0 1.5 A V Body Diode Reverse Recovery Time trr 30 60 ns Body Diode Reverse Recovery Charge Qrr 35 70 nC Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb IF = 15 A, dI/dt = 100 A/µs, TJ = 25 °C 20 10 ns Notes: a. Pulse test; pulse width 300 µs, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 2/9 www.freescale.net.cn SUD23N06-31 N-Channel 60 V (D-S) 175 °C MOSFET TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 10 50 VGS = 10 V thru 6 V 5V 8 I D - Drain Current (A) I D - Drain Current (A) 40 30 20 4V 6 4 TC = 25 °C 2 10 TC = 125 °C 3V TC = - 55 °C 0 0 0 2 4 6 8 0 10 1 2 3 4 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 5 0.10 32 25 °C 24 RDS(on) - On-Resistance () g fs - Transconductance (S) TC = - 55 °C 125 °C 16 8 0.08 0.06 VGS = 4.5 V 0.04 VGS = 10 V 0.02 0.00 0 0 5 10 15 20 0 25 10 20 ID - Drain Current (A) Transconductance On-Resistance vs. Drain Current 50 10 VGS - Gate-to-Source Voltage (V) ID = 23 A 800 C - Capacitance (pF) 40 ID - Drain Current (A) 1000 Ciss 600 400 Coss 200 Crss 0 VDS = 30 V 8 VDS = 15 V 6 VDS = 45 V 4 2 0 0 10 20 30 40 VDS - Drain-to-Source Voltage (V) Capacitance 3/9 30 50 60 0 2 4 6 8 10 Qg - Total Gate Charge (nC) Gate Charge www.freescale.net.cn 12 SUD23N06-31 N-Channel 60 V (D-S) 175 °C MOSFET TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 100 2.1 ID = 15 A VGS = 10 V 10 I S - Source Current (A) (Normalized) R DS(on) - On-Resistance 1.8 1.5 VGS = 4.5 V 1.2 0.9 TJ = 150 °C TJ = 25 °C 1 0.1 TJ = - 50 °C 0.01 0.6 - 50 - 25 0 25 50 75 100 125 0.001 0.0 150 0.2 0.4 0.6 0.8 1.0 1.2 TJ - Junction Temperature (°C) VSD - Source-to-Drain Voltage (V) On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage 0.5 0.08 R DS(on) - On-Resistance (Ω) 0.2 VGS(th) Variance (V) 0.06 TJ = 125 °C 0.04 0.02 - 0.7 - 1.0 - 50 0.00 1 2 3 4 5 6 7 8 ID = 1 mA - 0.4 ID = 250 µA TJ = 25 °C 0 - 0.1 9 10 - 25 0 25 50 75 100 125 VGS - Gate-to-Source Voltage (V) Threshold Voltage On-Resistance vs. Gate-to-Source Voltage 100 500 10 µs Limited by RDS(on)* 400 100 µs 10 I D - Drain Current (A) Power (W) 150 TJ - Temperature (°C) 300 200 1 ms 1 10 ms 100 ms, DC 0.1 TC = 25 °C Single Pulse 100 0 0.001 0.01 0.1 1 Time (s) Single Pulse Power, Junction-to-Ambient 4/9 10 0.01 0.1 BVDSS Limited 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Single Pulse Power, Junction-to-Case www.freescale.net.cn SUD23N06-31 N-Channel 60 V (D-S) 175 °C MOSFET TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 25 I D - Drain Current (A) 20 15 10 5 0 0 25 50 75 100 125 150 TC - Case Temperature (°C) Current Derating*, Junction-to-Case 3.0 40 2.5 30 Power (W) Power (W) 2.0 20 1.5 1.0 10 0.5 0.0 0 0 25 50 75 100 125 150 0 25 50 75 100 125 TC - Case Temperature (°C) TA - Ambient Temperature (°C) Power, Junction-to-Case Power, Junction-to-Ambient 150 * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. 5/9 www.freescale.net.cn SUD23N06-31 N-Channel 60 V (D-S) 175 °C MOSFET TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 Notes: 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 50 °C/W 3. TJM - TA = PDMZthJA(t) Single Pulse 0.01 10 -4 10 -3 10 -2 4. Surface Mounted 10 -1 1 100 10 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.05 0.1 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case 6/9 www.freescale.net.cn 10 SUD23N06-31 N-Channel 60 V (D-S) 175 °C MOSFET TO-252AA CASE OUTLINE E A MILLIMETERS C1 e b1 D1 e1 E1 L gage plane height (0.5 mm) L1 b L3 H D L2 b2 C A2 A1 INCHES DIM. MIN. MAX. MIN. MAX. A 2.21 2.38 0.087 0.094 A1 0.89 1.14 0.035 0.045 A2 0.030 0.127 0.001 0.005 b 0.71 0.88 0.028 0.035 b1 0.76 1.14 0.030 0.045 b2 5.23 5.44 0.206 0.214 C 0.46 0.58 0.018 0.023 C1 0.46 0.58 0.018 0.023 D 5.97 6.22 0.235 0.245 D1 4.10 4.45 0.161 0.175 E 6.48 6.73 0.255 0.265 E1 4.49 5.50 0.177 0.217 e e1 2.28 BSC 4.57 BSC 0.090 BSC 0.180 BSC H 9.65 10.41 0.380 L 1.40 1.78 0.055 0.070 L1 0.64 1.02 0.025 0.040 L2 0.89 1.27 0.035 0.050 L3 1.15 1.52 0.040 0.060 ECN: T11-0110-Rev. L, 18-Apr-11 DWG: 5347 Note • Dimension L3 is for reference only. 7/9 www.freescale.net.cn 0.410 SUD23N06-31 N-Channel 60 V (D-S) 175 °C MOSFET RECOMMENDED MINIMUM PADS FOR DPAK (TO-252) 0.224 0.243 0.087 (2.202) 0.090 (2.286) (10.668) 0.420 (6.180) (5.690) 0.180 0.055 (4.572) (1.397) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index 8/9 Return to Index www.freescale.net.cn SUD23N06-31 N-Channel 60 V (D-S) 175 °C MOSFET Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. freestyle Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on it s or their behalf (collectively, “freestyle”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. freestyle makes no warranty, representation or guarantee regarding the suitabilit y of the products for any particular purpose or the continuing production of any product. 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