346 STN4 STN4346 N Channel Enhancement Mode MOSFET 6.8A DESCRIPTION STN4392 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as power management and other battery powered circuits where high-side switching. PIN CONFIGURATION SOP-8 FEATURE � � � � � � 30V/6.8A, RDS(ON) = 26mΩ (Typ.) @VGS = 10V 30V/6.0A, RDS(ON) = 34mΩ @VGS = 4.5V 30V/5.6A, RDS(ON) = 40mΩ @VGS = 2.5V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability SOP-8 package design PART MARKING SOP-8 STN4346 YA Year Code Y：Year Process Code A：Process STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2007, Stanson Corp. STN4346 2010. V1 346 STN4 STN4346 N Channel Enhancement Mode MOSFET 6.8A ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted ) Parameter Symbol Typical Unit Drain-Source Voltage VDSS 30 V Gate-Source Voltage VGSS ±12 V ID 6.8 5.6 A IDM 30 A IS 2.3 A PD 2.5 1.6 W TJ -55/150 ℃ Storgae Temperature Range TSTG -55/150 ℃ Thermal Resistance-Junction to Ambient RθJA 80 ℃/W Continuous Drain Current (TJ=150℃) TA=25℃ TA=70℃ Pulsed Drain Current Continuous Source Current (Diode Conduction) Power Dissipation TA=25℃ TA=70℃ Operation Junction Temperature STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2007, Stanson Corp. STN4346 2010. V1 346 STN4 STN4346 N Channel Enhancement Mode MOSFET 6.8A ELECTRICAL CHARACTERISTICS ( Ta = 25℃ Unless otherwise noted ) Parameter Symbol Condition Min V(BR)DSS VGS=0V,ID=250uA 30 VGS(th) VDS=VGS,ID=250uA 1.0 IGSS Typ Max Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage V 3.0 V VDS=0V,VGS=±12V ±100 nA VDS=24V,VGS=0V 1 IDSS VDS=24V,VGS=0V TJ=85℃ 100 On-State Drain Current ID(on) VDS≥5V,VGS=10V Drain-source OnResistance RDS(on) VGS=10V,ID=6.8A VGS=4.5V,ID=6.0A VGS=2.5V,ID=5.6A 18 24 36 Forward Transconductance gfs VDS=15V,ID=6.2A 13 Diode Forward Voltage VSD IS=2.3A,VGS=0V 0.8 1.2 16 24 Gate Leakage Current Zero Gate Voltage Drain Current 25 uA A 26 34 40 mΩ S V Dynamic Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-On Time Turn-Off Time td(on) tr td(off) tf VDS=15V,VGS=10V ID≡2A 3 nC 2.5 VDD=15V,RL=15Ω ID=1.0A,VGS=10V RG=6Ω 15 20 6 12 10 20 40 80 nS STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2007, Stanson Corp. STN4346 2010. V1 346 STN4 STN4346 N Channel Enhancement Mode MOSFET 6.8A TYPICAL CHARACTERICTICS STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2007, Stanson Corp. STN4346 2010. V1 346 STN4 STN4346 N Channel Enhancement Mode MOSFET 6.8A TYPICAL CHARACTERICTICS STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2007, Stanson Corp. STN4346 2010. V1 346 STN4 STN4346 N Channel Enhancement Mode MOSFET 6.8A PACKAGE OUTLINE SOP-8P STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2007, Stanson Corp. STN4346 2010. V1 346 STN4 STN4346 N Channel Enhancement Mode MOSFET 6.8A STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2007, Stanson Corp. STN4346 2010. V1