ST2318SRG N Channel Enhancement Mode MOSFET 3.9A DESCRIPTION ST2318SRG is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management, other battery powered circuits, and low in-line power loss are needed in a very small outline surface mount package. PIN CONFIGURATION SOT-23 FEATURE 3 D G S 1 2 1.Gate 2.Source 3.Drain PART MARKING SOT-23 40V/3.9A, RDS(ON) = 42mΩ (Typ.) @VGS = 10V 40V/3.5A, RDS(ON) = 53mΩ @VGS = 4.5V 40V/2.0A, RDS(ON) = 75 mΩ @VGS = 2.5V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability SOT-23 package design 3 18YW 1 Y: Year Code 2 W: Week Code STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com ST2318SRG 2009. V1 ST2318SRG N Channel Enhancement Mode MOSFET 3.9A ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted ) Parameter Symbol Typical Unit Drain-Source Voltage VDSS 40 V Gate-Source Voltage VGSS ±20 V ID 3.9 3.0 A IDM 10 A Continuous Source Current (Diode Conduction) IS 1.20 A TA=25℃ TA=70℃ PD 1.20 0.8 W TJ 150 ℃ Storgae Temperature Range TSTG -55/150 ℃ Thermal Resistance-Junction to Ambient RθJA 100 Continuous Drain CurrentTJ=150℃) TA=25℃ TA=70℃ Pulsed Drain Current Power Dissipation Operation Junction Temperature ℃/W STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com ST2318SRG 2009. V1 ST2318SRG N Channel Enhancement Mode MOSFET 3.9A ELECTRICAL CHARACTERISTICS ( Ta = 25℃ Unless otherwise noted ) Parameter Symbol Condition Min Typ Max Unit V(BR)DSS VGS=0V,ID=250uA 40 VGS(th) VDS=VGS,ID=250uA 0.50 IGSS Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Leakage Current Zero Gate Voltage Drain Current IDSS V 1.2 V VDS=0V,VGS=±20V ±100 nA VDS=40V,VGS=0V 1 VDS=40V,VGS=0V TJ=85℃ 5 uA Drain-source On-Resistance RDS(on) VGS=10V,ID=3.9A VGS=4.5V,ID=3.5A VGS=2.5V,ID=2.0A 0.042 0.053 0.075 Ω Forward Transconductance gfs VDS=15V,ID=6.2A 13 S Diode Forward Voltage VSD IS=2.3A,VGS=0V 0.8 1.2 16 24 V Dynamic Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-On Time Turn-Off Time td(on) tr td(off) tf VDS=15V VGS=10V ID≡2.0A VDD=15V RL=15Ω ID=1.0A VGEN=10V RG=6Ω 3 nC 2.5 15 20 6 12 10 20 40 80 nS STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com ST2318SRG 2009. V1 ST2318SRG N Channel Enhancement Mode MOSFET 3.9A TYPICAL CHARACTERICTICS (25℃ Unless noted) STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com ST2318SRG 2009. V1 ST2318SRG N Channel Enhancement Mode MOSFET 3.9A TYPICAL CHARACTERICTICS (25℃ Unless noted) STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com ST2318SRG 2009. V1 ST2318SRG N Channel Enhancement Mode MOSFET 3.9A TYPICAL CHARACTERICTICS (25℃ Unless noted) STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com ST2318SRG 2009. V1 ST2318SRG N Channel Enhancement Mode MOSFET 3.9A SOT-23 PACKAGE OUTLINE STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com ST2318SRG 2009. V1