TIGER ELECTRONIC CO.,LTD Product specification 2SD560 NPN Silicon Power Ttransistors DESCRIPTION The 2SD560 is a mold power transistor developed for lowfrequency power amplifiers and low-speed switching. This transistor is ideal for direct driving from the IC output of devices such as pulse motor drivers and relay drivers, and PC terminals. O ABSOLUTE MAXIMUM RATINGS ( Ta = 25 C) Parameter l Value Unit Collector-Base Voltage VCBO 150 V Collector-Emitter Voltage VCEO 100 V Emitter-Base Voltage VEBO 7.0 V Collector Current IC 5.0 A Base Current IB 0.5 A Ptot 30 W Tj 150 o Tstg -55~150 o Total Dissipation at Max. Operating Junction Temperature Storage Temperature C C TO-220 O ELECTRICAL CHARACTERISTICS ( Ta = 25 C) Parameter Symbol Test Conditions Min. Typ. Max. Unit Collector Cut-off Current ICBO VCB=100V, IE=0 — — 1.0 uA Emitter Cut-off Current IEBO VEB=7.0V, IC=0 — — 10 uA Collector-Emitter Sustaining Voltage VCEO IC=30mA, IB=0 100 — — V hFE(1) VCE=2.0V, IC=3.0A 2000 — 15000 hFE(2) VCE=2.0V, IC=5.0A 500 — — DC Current Gain Collector-Emitter Saturation Voltage VCE(sat) IC=3.0A,IB=3.0mA — — 1.5 V Base Saturation Voltage VBE(sat) IC=3.0A,IB=3.0mA — — 2.0 V 4.0 — — MHz Current Gain Bandwidth Product fT VCE=10V,IC=500mA hFE Classification classification hFE1 R O 2000~5000 3000~7000 Y 5000~15000