TIP41/41A/41B/41C ® Pb TIP41/TIP41A/TIP41B/TIP41C Pb Free Plating Product NPN Silicon Epitaxial Power Transistor 9.90±0.20 0. φ FEATURES: ± 60 3. 9.19±0.20 2.80±0.20 15.70±0.20 * Complement to TIP42/TIP42A/TIP42B/TIP42C COLLECTOR 2 3 EMITTER 1. BASE 2. COLLECTOR 3. EMITTER 2.40±0.20 1.27±0.20 1.52±0.20 3.02±0.20 13.08±0.20 BASE 1 1.30±0.20 6.50±0.20 * Medium Power Linear Switching Applications 4.50±0.20 20 3 12 0.80±0.20 2.54typ TO-220C 2.54typ 0.50±0.20 Package Dimension Dimensions in Millimeters MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter TIP41 TIP41A TIP41B TIP41C Units VCBO Collector-Base Voltage 40 60 80 100 V VCEO Collector-Emitter Voltage 40 60 80 100 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 6 A PC Collector Power Dissipation 2 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ Page 1/2 © 2006 Thinki Semiconductor Co.,Ltd. http://www.thinkisemi.com/ TIP41/41A/41B/41C ® ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Symbol TIP41 TIP41A TIP41B TIP41C TIP41 TIP41A TIP41B TIP41C Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current TIP41 TIP41A TIP41B TIP41C TIP41/41A Test conditions MIN MAX UNIT IC=1mA, I E=0 40 60 80 100 V V(BR)CEO IC=30mA, I B=0 40 60 80 100 V V(BR)EBO IE= 1mA, I C=0 5 V ICBO VCB=40V, I E=0 VCB=60V, I E=0 VCB=80V, I E=0 VCB=100V, I E =0 V(BR)CBO ICEO TIP41B/41C IEBO 0.4 mA 0.7 mA 1 mA VCE=30V, I B=0 VCE=60V, I B=0 VEB=5V, I C=0 hFE(1) VCE=4V, I C=0.3A 30 hFE(2) VCE=4V, I C=3A 15 Collector-emitter saturation voltage VCE (sat) IC=6A, IB =0.6A 1.5 V Base-emitter voltage VBE(on) VCE=4V, IC =6A 2 V Transition Frequency fT DC current gain VCE=10V, IC =0.5A f = 1MHz 3 75 MHz Page 2/2 © 2006 Thinki Semiconductor Co.,Ltd. http://www.thinkisemi.com/