THINKISEMI 2SD1163

2SD1163/2SD1163A
®
Pb
2SD1163/2SD1163A
Pb Free Plating Product
NPN Silicon Epitaxial Power Transistor
9.90±0.20
FEATURES:
1.27±0.20
1.52±0.20
9.19±0.20
6.50±0.20
1.30±0.20
2.40±0.20
0.80±0.20
3
12
TO-220C
4.50±0.20
3.02±0.20
BASE
1
2.80±0.20
15.70±0.20
13.08±0.20
COLLECTOR
2
1. BASE
2. COLLECTOR
3. EMITTER
20
φ3
* Medium Power Linear Switching Applications
* Low collector saturation voltage
TV horizontal deflection output
3
EMITTER
0.
0±
.6
2.54typ
2.54typ
Package Dimension
0.50±0.20
Dimensions in Millimeters
Absolute maximum ratings (Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
2SD1163
VCBO
Collector-base voltage
120
Open base
2SD1163A
VEBO
Emitter-base voltage
V
350
2SD1163
Collector-emitter voltage
UNIT
300
Open emitter
2SD1163A
VCEO
VALUE
V
150
Open collector
6
V
IC
Collector current
7
A
ICM
Collector current-peak
10
A
IC(surge)
Collector current-surge
20
A
40
W
TC=25℃
PC
Collector power dissipation
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
Page 1/2
© 2006 Thinki Semiconductor Co.,Ltd.
http://www.thinkisemi.com/
2SD1163/2SD1163A
®
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
2SD1163
V(BR)CEO
Collector-emitter
breakdown voltage
Emitter-base breakdown voltage
Collector-emitter
saturation voltage
150
IE=10mA ;IC=0
6
ICBO
hFE
V
2.0
IC=5A, IB=0.5A
Base-emitter saturation voltage
UNIT
V
V
1.0
2SD1163A
VBEsat
MAX
120
2SD1163
VCEsat
TYP
IC=10mA ;RBE=∞
2SD1163A
V(BR)EBO
MIN
IC=5A, IB=0.5A
1.2
V
2SD1163
VCB=300V;IE=0
5
mA
2SD1163A
VCB=350V;IE=0
5
mA
0.5
μs
Collector
cut-offcurrent
DC current gain
IC=5A ; VCE=5V
25
Switching times
tf
Fall time
ICM=3.5A;IB1 =0.45A
Page 2/2
© 2006 Thinki Semiconductor Co.,Ltd.
http://www.thinkisemi.com/