2SD1163/2SD1163A ® Pb 2SD1163/2SD1163A Pb Free Plating Product NPN Silicon Epitaxial Power Transistor 9.90±0.20 FEATURES: 1.27±0.20 1.52±0.20 9.19±0.20 6.50±0.20 1.30±0.20 2.40±0.20 0.80±0.20 3 12 TO-220C 4.50±0.20 3.02±0.20 BASE 1 2.80±0.20 15.70±0.20 13.08±0.20 COLLECTOR 2 1. BASE 2. COLLECTOR 3. EMITTER 20 φ3 * Medium Power Linear Switching Applications * Low collector saturation voltage TV horizontal deflection output 3 EMITTER 0. 0± .6 2.54typ 2.54typ Package Dimension 0.50±0.20 Dimensions in Millimeters Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER CONDITIONS 2SD1163 VCBO Collector-base voltage 120 Open base 2SD1163A VEBO Emitter-base voltage V 350 2SD1163 Collector-emitter voltage UNIT 300 Open emitter 2SD1163A VCEO VALUE V 150 Open collector 6 V IC Collector current 7 A ICM Collector current-peak 10 A IC(surge) Collector current-surge 20 A 40 W TC=25℃ PC Collector power dissipation Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Page 1/2 © 2006 Thinki Semiconductor Co.,Ltd. http://www.thinkisemi.com/ 2SD1163/2SD1163A ® CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS 2SD1163 V(BR)CEO Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage 150 IE=10mA ;IC=0 6 ICBO hFE V 2.0 IC=5A, IB=0.5A Base-emitter saturation voltage UNIT V V 1.0 2SD1163A VBEsat MAX 120 2SD1163 VCEsat TYP IC=10mA ;RBE=∞ 2SD1163A V(BR)EBO MIN IC=5A, IB=0.5A 1.2 V 2SD1163 VCB=300V;IE=0 5 mA 2SD1163A VCB=350V;IE=0 5 mA 0.5 μs Collector cut-offcurrent DC current gain IC=5A ; VCE=5V 25 Switching times tf Fall time ICM=3.5A;IB1 =0.45A Page 2/2 © 2006 Thinki Semiconductor Co.,Ltd. http://www.thinkisemi.com/