TIP42/42A/42B/42C Pb Free Plating Product ® Pb TIP42/TIP42A/TIP42B/TIP42C PNP Silicon Epitaxial Power Transistor 9.90±0.20 Features: * Medium Power Linear Switching Applications * Complement to TIP41/TIP41A/TIP41B/TIP41C 1. BASE 2. COLLECTOR 3. EMITTER 3 12 4.50±0.20 1.30±0.20 6.50±0.20 20 9.19±0.20 2.40±0.20 1.27±0.20 1.52±0.20 3.02±0.20 13.08±0.20 BASE 1 2.80±0.20 15.70±0.20 φ COLLECTOR 2 3 EMITTER 0. ± 60 3. 0.80±0.20 2.54typ TO-220C 2.54typ 0.50±0.20 Package Dimension Dimensions in Millimeters MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Parameter Symbol TIP42 TIP42A TIP42B TIP42C Units Collector-Base Voltage VCBO -40 -60 -80 -100 V Collector-Emitter Voltage VCEO -40 -60 -80 -100 V Emitter-Base Voltage VEBO -5 V Collector Current -Continuous IC -6 A Collector Power Dissipation PC 2 W Junction Temperature TJ 150 ℃ Storage Temperature Range Tstg -55to+150 ℃ Page 1/2 © 2006 Thinki Semiconductor Co.,Ltd. http://www.thinkisemi.com/ TIP42/42A/42B/42C ® ELECTRICAL CHARACTERISTICS (Tamb=25 ℃ unless otherwise specified) Parameter Collector-base breakdown voltage Symbol TIP42B V(BR)CBO IC= -1mA, IE=0 TIP42 -40 V(BR)CEO* IC= -30mA, IB=0 V(BR)EBO TIP42 TIP42A TIP42B TIP42C Collector cut-off current V -80 ICBO ICEO IE= -1mA, IC=0 -5 VCB=-40V, IE=0 VCB=-60V, IE=0 VCB=-80V, IE=0 VCB=-100V, IE=0 VCE= -30V, IB= 0 VCE= -60V, IB= 0 V -0.4 mA -0.7 mA -1 mA IEBO VEB=-5V, IC=0 hFE(1) VCE=-4V, IC=-0.3A 30 hFE(2) VCE=-4 V, IC= -3A 15 VCE(sat) IC=-6A, IB=-0.6A -1.5 V Base-emitter voltage VBE VCE=-4V, IC=-6A -2 V Transition frequency fT VCE=-10V,IC=-0.5 Emitter cut-off current DC current gain Collector-emitter saturation voltage * TIP42/42A TIP42B/42C -60 -100 TIP42C Emitter-base breakdown voltage UNIT V -80 -100 TIP42B MAX -60 TIP42C TIP42A Collector cut-off current MI N -40 TIP42 TIP42A Collector-emitter breakdown voltage Test conditions 3 75 MHZ Pulse test Page 2/2 © 2006 Thinki Semiconductor Co.,Ltd. http://www.thinkisemi.com/