TYSEMI 2SC3380

Transistors
IC
SMD Type
Product specification
2SC3380
SOT-89
Unit:mm
1.50 ±0.1
4.50±0.1
■ Features
1.80±0.1
2.50±0.1
4.00±0.1
● High frequency high voltage amplifier
● High voltage switch
0.53±0.1
3.00±0.1
0.80±0.1
3
0.44±0.1
2.60±0.1
0.48±0.1
2
0.40±0.1
1
1.Base
2.Collector
3.Emitter
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Symbol
Rating
Unit
Collector-base voltage
VCBO
300
V
Collector-emitter voltage
VCEO
300
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
100
mA
PC*
1
W
Junction temperature
Tj
150
℃
Storage temperature
Tstg
-55 to +150
℃
Total power dissipation
* Value on the alumina ceramic board (12.5 × 20 × 0.7 mm)
■ Electrical Characteristics Ta = 25℃
Parameter
Symbol
Test conditons
Min
Typ
Max
Unit
Collector to base breakdown voltage
V(BR)CBO IC = 10 μA, IE = 0
300
V
Collector to emitter breakdown voltage
V(BR)CEO IC = 1 mA, IB = 0
300
V
Emitter to base breakdown voltage
V(BR)EBO IE = 10 μA, IC = 0
5
V
Collector cutoff current
ICEO
Collector to emitter saturation voltage
DC current gain
VCB = 250V,IB=0
VCE(sat) IC = 20 mA, IB = 2 mA
hFE
Transition frequency
fT
Output Capacitance
Cob
VCE =20V,Ic=20mA
VCE = 20V ,Ic=20mA
30
1.0
μA
1.5
V
200
80
VCB = 20 V, IE = 0, f = 1.0 MHz
MHz
4
pF
■ Marking
Marking
AS
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4008-318-123
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