SMD Type Product specification 2SJ451 Application Low frequency power switching Features • • • • Low on-resistance. Low drive power 2.5 V gate drive device. Small package (MPAK). Outline MPAK 3 1 2 D 1. Source 2. Gate 3. Drain G S http://www.twtysemi.com [email protected] 4008-318-123 1 of 2 SMD Type Product specification 2SJ451 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Drain to source voltage VDSS –20 V Gate to source voltage VGSS ±20 V Drain current ID –0.2 A Drain peak current I D(pulse)* 1 –0.4 A Channel dissipation Pch 150 mW Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C Note: 1. PW ≤ 10 µs, duty cycle ≤ 1% Marking is "ZK–". Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions Drain to source breakdown voltage V(BR)DSS –20 — — V I D = –100 µA, VGS = 0 Gate to source breakdown voltage V(BR)GSS ±20 — — V I G = ±100 µA, VDS = 0 Zero gate voltage drain current I DSS — — –1.0 µA VDS = –16 V, VGS = 0 Gate to source leak current I GSS — — ±2.0 µA VGS = ±16 V, VDS = 0 Gate to source cutoff voltage VGS(off) –0.5 — –1.5 V I D = –10 µA, VDS = –5 V Static drain to source on state resistance RDS(on)1 — 2.3 3.5 Ω I D = –100 mA VGS = –4 V*1 Static drain to source on state resistance RDS(on)2 — 5.0 9.0 Ω I D = –40 mA VGS = –2.5 V*1 Foward transfer admittance |yfs| 0.13 0.23 — S I D = –100 mA*1 VDS = –10 V Input capacitance Ciss — 2.4 — pF VDS = –10 V Output capacitance Coss — 31 — pF VGS = 0 Reverse transfer capacitance Crss — 0.6 — pF f = 1 MHz Turn-on delay time t d(on) — 0.17 — µs VGS = –10 V, ID = –0.1 A Rise time tr — 0.68 — µs RL = 100 Ω Turn-off delay time t d(off) — 3.0 — µs Fall time tf — 2.8 — µs http://www.twtysemi.com [email protected] 4008-318-123 2 of 2