SMD Type Product specification 2SJ574 Features • Low on-resistance R DS = 1.1 Ω typ. (VGS = -10 V , I D = -150 mA) R DS = 2.2 Ω typ. (VGS = -4 V , I D = -150 mA) • 4 V gate drive device. • Small package (MPAK) Outline MPAK 3 1 D 3 2 2 1. Source 2. Gate 3. Drain G S http://www.twtysemi.com 1 [email protected] 4008-318-123 1of 2 SMD Type Product specification 2SJ574 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Drain to source voltage VDSS -30 V Gate to source voltage VGSS ±20 V Drain current ID -300 mA -1.2 A -300 mA 400 mW Drain peak current I D(pulse) Body-drain diode reverse drain current I DR Note1 Note 2 Channel dissipation Pch Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C Note: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value on the alumina ceramic board (12.5x20x0.7mm) Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test Conditions Drain to source breakdown voltage V(BR)DSS -30 — — V I D = -100 µA, VGS = 0 Gate to source breakdown voltage V(BR)GSS ±20 — — V I G = ±100 µA, VDS = 0 Gate to source leak current I GSS — — ±5 µA VGS = ±16 V, VDS = 0 Zero gate voltege drain current I DSS — — -1 µA VDS = -30 V, VGS = 0 Gate to source cutoff voltage VGS(off) -1.3 — -2.3 V I D = -10µA, VDS = -5 V Static drain to source on state RDS(on) — 1.1 1.3 Ω ID = -150 mA,VGS = -10 V Note 3 resistance RDS(on) — 2.2 3.1 Ω ID = -150 mA,VGS = -4 V Note 3 Forward transfer admittance |yfs| 195 300 — mS ID = -150 mA, VDS = -10 V Note 3 Input capacitance Ciss — 50 — pF VDS = -10 V Output capacitance Coss — 40 — pF VGS = 0 Reverse transfer capacitance Crss — 15 — pF f = 1 MHz Turn-on delay time t d(on) — 20 — ns I D = -150 mA, VGS = -10 V Rise time tr — 50 — ns RL = 66.6 Ω Turn-off delay time t d(off) — 110 — ns Fall time tf — 105 — ns http://www.twtysemi.com [email protected] 4008-318-123 2 of 2