TYSEMI 2SJ574

SMD Type
Product specification
2SJ574
Features
• Low on-resistance
R DS = 1.1 Ω typ. (VGS = -10 V , I D = -150 mA)
R DS = 2.2 Ω typ. (VGS = -4 V , I D = -150 mA)
• 4 V gate drive device.
• Small package (MPAK)
Outline
MPAK
3
1
D
3
2
2
1. Source
2. Gate
3. Drain
G
S
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1
[email protected]
4008-318-123
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SMD Type
Product specification
2SJ574
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
VDSS
-30
V
Gate to source voltage
VGSS
±20
V
Drain current
ID
-300
mA
-1.2
A
-300
mA
400
mW
Drain peak current
I D(pulse)
Body-drain diode reverse drain current
I DR
Note1
Note 2
Channel dissipation
Pch
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Note:
1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value on the alumina ceramic board (12.5x20x0.7mm)
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown
voltage
V(BR)DSS
-30
—
—
V
I D = -100 µA, VGS = 0
Gate to source breakdown
voltage
V(BR)GSS
±20
—
—
V
I G = ±100 µA, VDS = 0
Gate to source leak current
I GSS
—
—
±5
µA
VGS = ±16 V, VDS = 0
Zero gate voltege drain
current
I DSS
—
—
-1
µA
VDS = -30 V, VGS = 0
Gate to source cutoff voltage VGS(off)
-1.3
—
-2.3
V
I D = -10µA, VDS = -5 V
Static drain to source on state RDS(on)
—
1.1
1.3
Ω
ID = -150 mA,VGS = -10 V Note 3
resistance
RDS(on)
—
2.2
3.1
Ω
ID = -150 mA,VGS = -4 V Note 3
Forward transfer admittance
|yfs|
195
300
—
mS
ID = -150 mA, VDS = -10 V Note 3
Input capacitance
Ciss
—
50
—
pF
VDS = -10 V
Output capacitance
Coss
—
40
—
pF
VGS = 0
Reverse transfer capacitance Crss
—
15
—
pF
f = 1 MHz
Turn-on delay time
t d(on)
—
20
—
ns
I D = -150 mA, VGS = -10 V
Rise time
tr
—
50
—
ns
RL = 66.6 Ω
Turn-off delay time
t d(off)
—
110
—
ns
Fall time
tf
—
105
—
ns
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[email protected]
4008-318-123
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