Product specification DMP3130L P-CHANNEL ENHANCEMENT MODE MOSFET Features NEW PRODUCT • • • • • • • • Mechanical Data • • Low On-Resistance: • RDS(ON) < 77mΩ @ VGS = -10V • RDS(ON) < 95mΩ @ VGS = -4.5V • RDS(ON) < 150mΩ @ VGS = -2.5V Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead Free By Design/RoHS Compliant (Note 2) "Green" Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability • • • • Case: SOT-23 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020D Terminals: Finish – Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Weight: 0.008 grams (approximate) SOT-23 Drain D Gate Source Equivalent Circuit TOP VIEW Maximum Ratings S G TOP VIEW @TA = 25°C unless otherwise specified Characteristic Symbol VDSS VGSS Drain Source Voltage Gate-Source Voltage Drain Current (Note 1) TA = 25°C TA = 70°C Pulsed Drain Current (Note 1) Body-Diode Continuous Current (Note 1) ID IDM IS Value -30 ±12 -3.5 -2.8 -12 -2.0 Unit V V A A A Thermal Characteristics Characteristic Total Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient @TA = 25°C (Note 1) Operating and Storage Temperature Range Notes: Symbol Value Unit PD RθJA 1.4 90 W °C/W TJ, TSTG -55 to +150 °C 1. Device mounted on FR-4 PCB. t ≤5 sec. 2. No purposefully added lead. http://www.twtysemi.com [email protected] 1 of 2 Product specification DMP3130L Electrical Characteristics @TA = 25°C unless otherwise specified NEW PRODUCT Characteristic OFF CHARACTERISTICS (Note 4) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage ON CHARACTERISTICS (Note 4) Gate Threshold Voltage Static Drain-Source On-Resistance Symbol Min Typ Max Unit Test Condition BVDSS IDSS IGSS -30 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ -1 ±100 V μA nA VGS = 0V, ID = -250μA VDS = -30V, VGS = 0V VGS = ±12V, VDS = 0V VGS(th) -0.6 ⎯ -1.3 V RDS (ON) ⎯ ⎯ 59 73 115 77 95 150 mΩ VDS = VGS, ID = -250μA VGS = -10V, ID = -4.2A VGS = -4.5V, ID = -4A VGS = -2.5V, ID = -3A VDS = -5V, ID = -4A VGS = 0V, IS = -3.0A Forward Transconductance Source-Drain Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 5) Input Capacitance Output Capacitance Reverse Transfer Capacitance gfs VSD ⎯ ⎯ 8 0.8 ⎯ -1.25 S V Ciss Coss Crss ⎯ ⎯ ⎯ 432 87 62 864 174 124 pF pF pF VDS = -15V, VGS = 0V f = 1.0MHz Gate Resistance RG ⎯ 4.04 ⎯ Ω VDS = 0V, VGS = 0V f = 1.0MHz QG ⎯ QGS QGD td(on) tr td(off) tf ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 5.9 12 1.0 3.1 4.6 6.5 27.8 15.0 11.8 24 2.0 6.2 9.2 13.0 55.6 30.0 SWITCHING CHARACTERISTICS (Note 5) Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Notes: nC VDS = -15V, VGS = -4.5V, ID = -4.0A VDS = -15V, VGS = -10V, ID = -4.0A VDS = -15V, VGS = -4.5V, ID = -4.0A ns VDS = -15V, VGS = -10V, ID = -1A, RG = 6.0Ω 3. Short duration pulse test used to minimize self-heating effect. 4. Guaranteed by design. Not subject to product testing http://www.twtysemi.com [email protected] 2 of 2