Product specification DMP3120L P-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data • • • • • • • • • • Low On-Resistance: RDS(ON) < 120mΩ @ VGS = -4.5V RDS(ON) < 240mΩ @ VGS = -2.5V Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead Free By Design/RoHS Compliant (Note 2) "Green" Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Case: SOT-23 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish – Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Weight: 0.008 grams (approximate) • • • • Drain SOT-23 D Gate Source Top View Maximum Ratings Equivalent Circuit S G Top View @TA = 25°C unless otherwise specified Characteristic Symbol VDSS VGSS Drain Source Voltage Gate-Source Voltage Drain Current (Note 1) TA = 25°C TA = 70°C Pulsed Drain Current (Note 1) Body-Diode Continuous Current (Note 1) ID IDM IS Value -30 ±12 -2.8 -2.2 -9 -2.0 Unit V V A A A Thermal Characteristics Characteristic Total Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient @TA = 25°C (Note 1) Operating and Storage Temperature Range Notes: Symbol PD RθJA TJ, TSTG Value 1.4 90 -55 to +150 Unit W °C/W °C 1. Device mounted on FR-4 PCB. t ≤5 sec. 2. No purposefully added lead. http://www.twtysemi.com [email protected] 1 of 2 Product specification DMP3120L Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic OFF CHARACTERISTICS (Note 4) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage ON CHARACTERISTICS (Note 4) Gate Threshold Voltage Symbol Min Typ Max Unit Test Condition BVDSS IDSS IGSS -30 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ -1 ±100 V μA nA VGS = 0V, ID = -250μA VDS = -30V, VGS = 0V VGS = ±12V, VDS = 0V VGS(th) RDS (ON) -1.4 120 240 V Static Drain-Source On-Resistance ⎯ ⎯ ⎯ 5 ⎯ ⎯ -1.1 S V VDS = VGS, ID = -250μA VGS = -4.5V, ID = -2.8A VGS = -2.5V, ID = -1.8A VDS = -5V, ID = -2.8A VGS = 0V, IS = -2.0A Forward Transconductance Source-Drain Diode Forward Voltage DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance gfs VSD -0.6 ⎯ ⎯ ⎯ ⎯ Ciss Coss Crss ⎯ ⎯ ⎯ 285 56 40 ⎯ ⎯ ⎯ pF pF pF VDS = -15V, VGS = 0V f = 1.0MHz Gate Resistance RG ⎯ 13 ⎯ Ω VDS = 0V, VGS = 0V f = 1.0MHz td(on) tr td(off) tf ⎯ ⎯ ⎯ ⎯ 5.6 6.8 35.3 19.2 ⎯ ⎯ ⎯ ⎯ ns VDS = -15V, VGS = -4.5V, ID = -1A, RG = 6.0Ω Total Gate Charge QG ⎯ 6.7 3.0 ⎯ Gate-Source Charge Gate-Drain Charge QGS QGD ⎯ ⎯ 0.8 0.5 ⎯ ⎯ SWITCHING CHARACTERISTICS Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Notes: mΩ VDS = -15V, VGS = -10V, ID = -1.0A nC VDS = -15V, VGS = -4.5V, ID = -1.0A 3. Short duration pulse test used to minimize self-heating effect. http://www.twtysemi.com [email protected] 2 of 2