SMD Type Product specification FDN342P General Description Features This P-Channel 2.5V specified MOSFET is produced in a rugged gate version of Fairchild Semiconductor's advanced PowerTrench process. It has been optimized for power management applications for a wide range of gate drive voltages (2.5V - 12V). Applications Load switch Battery protection Power management -2 A, -20 V. RDS(ON) = 0.08 Ω @ VGS = -4.5 V RDS(ON) = 0.13 Ω @ VGS = -2.5 V. Rugged gate rating (±12V). High performance trench technology for extremely low RDS(ON). Enhanced power SuperSOTTM-3 (SOT-23). D D S TM SuperSOT -3 G Absolute Maximum Ratings Symbol TA = 25°C unless otherwise noted Parameter VDSS Drain-Source Voltage VGSS Gate-Source Voltage ID Drain Current - Continuous (Note 1a) - Pulsed PD Power Dissipation for Single Operation TJ, Tstg S G Ratings Units -20 V ±12 -2 V A -10 (Note 1a) 0.5 (Note 1b) 0.46 Operating and Storage Junction Temperature Range W -55 to +150 °C Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 250 °C/W RθJC Thermal Resistance, Junction-to-Case (Note 1) 75 °C/W Package Outlines and Ordering Information Device Marking Device Reel Size Tape Width Quantity FDN342P FDN342P 7’’ 8mm 3000 units http://www.twtysemi.com 4008-318-123 1 of 2 SMD Type Product specification FDN342P Electrical Characteristics Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = -250 µA ∆BVDSS ∆TJ IDSS Breakdown Voltage Temperature Coefficient ID = -250 µA,Referenced to 25°C Zero Gate Voltage Drain Current VDS = -16 V, VGS = 0 V -1 IGSSF Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse VGS = 12 V, VDS = 0 V 100 µA nA VGS = -12 V, VDS = 0 V -100 nA IGSSR On Characteristics -20 V -16 mV/°C (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = -250 µA ∆VGS(th) ∆TJ RDS(on) Gate Threshold Voltage Temperature Coefficient ID = -250 µA,Referenced to 25°C 3 Static Drain-Source On-Resistance 0.062 0.086 0.099 ID(on) On-State Drain Current VGS = -4.5 V, ID = -2 A VGS = -4.5 V, ID = -2 A,TJ=125°C VGS = -2.5 V, ID = -1.5 A VGS = -4.5 V, VDS = -5 V gFS Forward Transconductance VDS = -5 V, ID = -5 A -0.6 -1.05 -1.5 V mV/°C 0.08 0.14 0.13 -5 Ω A 7 S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDS = -10 V, VGS = 0 V f = 1.0 MHz 635 pF 175 pF 75 pF (Note 2) VDD = -10 V, ID = -1 A VGS = -4.5 V, RGEN = 6 Ω 20 VDS = -10 V, ID = -2 A VGS = -4.5 V, 35 ns 8 16 ns 9 18 ns 19 32 ns 6.3 9 nC 1.5 nC 1.7 nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = -0.42 A (Note 2) -0.7 -0.42 A -1.2 V Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) 250°C/W when mounted on a 0.02 in2 pad of 2 oz. Cu. b) 270°C/W when mounted on a mininum pad. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% http://www.twtysemi.com 4008-318-123 2 of 2