SMD Type Product specification FDN308P General Description Features This P-Channel 2.5V specified MOSFET uses a rugged gate version of Fairchild’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V – 12V). • –20 V, –1.5 A. RDS(ON) = 125 mΩ @ VGS = –4.5 V RDS(ON) = 190 mΩ @ VGS = –2.5 V • Fast switching speed • High performance trench technology for extremely low RDS(ON) Applications • Power management • SuperSOTTM -3 provides low RDS(ON) and 30% higher power handling capability than SOT23 in the same footprint • Load switch • Battery protection D D S S G TM SuperSOT -3 G Absolute Maximum Ratings Symbol TA=25oC unless otherwise noted Parameter Ratings Units VDSS Drain-Source Voltage –20 V VGSS Gate-Source Voltage ±12 V ID Drain Current –1.5 A – Continuous – Pulsed (Note 1a) –10 Maximum Power Dissipation (Note 1a) PD (Note 1b) TJ, TSTG Operating and Storage Junction Temperature Range W 0.5 0.46 °C –55 to +150 Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient RθJC Thermal Resistance, Junction-to-Case (Note 1a) 250 °C/W (Note 1) 75 °C/W Package Marking and Ordering Information Device Marking 308 http://www.twtysemi.com Device FDN308P Reel Size 7’’ [email protected] Tape width 8mm Quantity 3000 units 4008-318-123 1of 2 SMD Type Product specification FDN308P Electrical Characteristics Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics VGS = 0 V, ID = –250 µA BVDSS ∆BVDSS ∆TJ IDSS Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current VDS = –16 V, VGS = 0 V –1 µA IGSSF Gate–Body Leakage, Forward VGS = 12 V, VDS = 0 V 100 nA IGSSR Gate–Body Leakage, Reverse VGS = –12 V VDS = 0 V –100 nA –1.0 3 –1.5 V mV/°C 86 136 114 125 190 178 mΩ On Characteristics –20 ID = –250 µA,Referenced to 25°C V –13 mV/°C (Note 2) VGS(th) ∆VGS(th) ∆TJ RDS(on) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient VDS = VGS, ID = –250 µA ID = –250 µA,Referenced to 25°C Static Drain–Source On–Resistance ID(on) On–State Drain Current VGS = –4.5 V, ID = –1.5 A VGS = –2.5 V, ID = –1.3 A VGS = –4.5 V, ID = –1.5A TJ=125°C VGS = –4.5 V, VDS = –5 V gFS Forward Transconductance VDS = –5 V, ID = –1.5 A 12 VDS = –10 V, f = 1.0 MHz V GS = 0 V, 341 pF 83 pF VDD = –10 V, VGS = –4.5 V, ID = –1 A, RGEN = 6 Ω –0.6 –5 A S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance td(on) Turn–On Delay Time tr Turn–On Rise Time td(off) Turn–Off Delay Time tf Turn–Off Fall Time Qg Total Gate Charge Qgs Gate–Source Charge Qgd Gate–Drain Charge 43 VDS = –10V, VGS = –4.5 V ID = –1.5 A, pF 8 16 ns 10 20 ns 12 22 ns 8 16 ns 3.8 5.4 nC 0.8 nC 1.0 nC Drain–Source Diode Characteristics and Maximum Ratings IS VSD Maximum Continuous Drain–Source Diode Forward Current Drain–Source Diode Forward VGS = 0 V, IS = –0.42 Voltage (Note 2) –0.7 –0.42 A –1.2 V Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) 250°C/W when mounted on a 0.02 in2 pad of 2 oz. copper. b) 270°C/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% http://www.twtysemi.com [email protected] 4008-318-123 2of 2