SMD Type Product specification FDN8601 100 V, 2.7 A, 109 m: Features General Description Max rDS(on) = 109 m: at VGS = 10 V, ID = 1.5 A Max rDS(on) = 175 m: at VGS = 6 V, ID = 1.2 A High performance trench technology for extremely low rDS(on) High power and current handling capability in a widely used surface mount package This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switching performance and ruggedness. Applications Primary DC-DC Switch Fast switching speed Load Switch 100% UIL tested RoHS Compliant MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS Drain to Source Voltage Parameter VGS Gate to Source Voltage -Continuous ID (Note 1a) -Pulsed PD TJ, TSTG Units V ±20 V 2.7 12 Single Pulse Avalanche Energy EAS Ratings 100 (Note 3) 13 Power Dissipation (Note 1a) 1.5 Power Dissipation (Note 1b) 0.6 Operating and Storage Junction Temperature Range -55 to +150 A mJ W °C Thermal Characteristics RTJC Thermal Resistance, Junction to Case RTJA Thermal Resistance, Junction to Ambient (Note 1) 75 (Note 1a) 80 °C/W Package Marking and Ordering Information Device Marking 8601 http://www.twtysemi.com Device FDN8601 Package SSOT-3 Reel Size 7 ’’ Tape Width 8 mm 4008-318-123 Quantity 3000 units 1of 2 SMD Type Product specification FDN8601 Electrical Characteristics TJ = 25 °C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250 PA, VGS = 0 V 'BVDSS 'TJ Breakdown Voltage Temperature Coefficient ID = 250 PA, referenced to 25 °C IDSS Zero Gate Voltage Drain Current VDS = 80 V, VGS = 0 V 1 PA IGSS Gate to Source Leakage Current VGS = ±20 V, VDS = 0 V ±100 nA 4.0 V 100 V 68 mV/°C On Characteristics (Note 2) VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250 PA 'VGS(th) 'TJ Gate to Source Threshold Voltage Temperature Coefficient ID = 250 PA, referenced to 25 °C rDS(on) Static Drain to Source On Resistance gFS Forward Transconductance 2.0 3.0 -8 mV/°C VGS = 10 V, ID = 1.5 A 85.4 109 VGS = 6 V, ID = 1.2 A 117 175 VGS = 10 V, ID = 1.5 A, TJ = 125 °C 143 183 VDS = 10 V, ID = 1.5 A 8 m: S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance VDS = 50 V, VGS = 0 V, f = 1 MHz 156 210 pF 47 65 pF 2.7 5 pF : 1.0 Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Qg Total Gate Charge VGS = 0 V to 10 V Qg Total Gate Charge VGS = 0 V to 5 V Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller” Charge VDD = 50 V, ID = 1.5 A, VGS = 10 V, RGEN = 6 : VDD = 50 V, ID = 1.5 A 4.3 10 ns 1.3 10 ns 7.8 16 ns 3.4 10 ns 3 5 nC 1.8 3 nC 0.9 nC 0.8 nC Drain-Source Diode Characteristics VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0 V, IS = 1.5 A (Note 2) IF = 1.5 A, di/dt = 100 A/Ps 0.81 1.3 V 29 46 ns 15 27 nC Notes: 1. RTJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RTJC is guaranteed by design while RTCA is determined by the user's board design. a) 80 °C/W when mounted on a 1 in2 pad of 2 oz copper b) 180 °C/W when mounted on a minimum pad. 2. Pulse Test: Pulse Width < 300 Ps, Duty cycle < 2.0%. 3. Starting TJ = 25 °C; N-ch: L = 3 mH, IAS = 3 A, VDD = 100 V, VGS = 10 V. http://www.twtysemi.com 4008-318-123 2of 2