SMD Type Product specification FDN304P General Description Features This P-Channel 1.8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management applications. • –2.4 A, –20 V. Applications • Fast switching speed • Battery management • ESD protection diode • Load switch • High performance trench technology for extremely low RDS(ON) • Battery protection RDS(ON) = 52 mΩ @ VGS = –4.5 V RDS(ON) = 70 mΩ @ VGS = –2.5 V RDS(ON) = 100 mΩ @ VGS = –1.8 V • SuperSOTTM -3 provides low RDS(ON) and 30% higher power handling capability than SOT23 in the same footprint D D S TM SuperSOT -3 Absolute Maximum Ratings Symbol TA=25oC unless otherwise noted Parameter VDSS Drain-Source Voltage VGSS Gate-Source Voltage ID Drain Current – Continuous (Note 1a) – Pulsed PD Ratings Units –20 V ±8 V –2.4 A –10 Maximum Power Dissipation TJ, TSTG S G G (Note 1a) 0.5 (Note 1b) 0.46 Operating and Storage Junction Temperature Range W °C –55 to +150 Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient RθJC Thermal Resistance, Junction-to-Case (Note 1a) 250 °C/W (Note 1) 75 °C/W Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity 04Z FDN304PZ 7’’ 8mm 3000 units http://www.twtysemi.com [email protected] 4008-318-123 1of 2 SMD Type Product specification FDN304P Electrical Characteristics Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain–Source Breakdown Voltage VGS = 0 V, ID = –250 µA ∆BVDSS ∆TJ IDSS Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current ID = –250 µA,Referenced to 25°C IGSS Gate–Body Leakage VGS = ±8 V, VDS = 0 V On Characteristics VDS = –16 V, –20 V –13 VGS = 0 V mV/°C –1 µA ±10 uA (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = –250 µA ∆VGS(th) ∆TJ RDS(on) Gate Threshold Voltage Temperature Coefficient Static Drain–Source On–Resistance ID = –250 µA,Referenced to 25°C 3 On–State Drain Current ID = –2.4 A ID = –2.0 A ID = –1.8 A VDS = –5 V 36 47 65 ID(on) VGS = –4.5 V, VGS = –2.5 V, VGS = –1.8V, VGS = –4.5 V, gFS Forward Transconductance VDS = –5 V, ID = –1.25 A VDS = –10 V, f = 1.0 MHz V GS = 0 V, –0.4 –0.8 –1.5 V mV/°C 52 70 100 –10 mΩ A 12 S 1310 pF Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance RG Gate Resistance Switching Characteristics td(on) Turn–On Delay Time tr Turn–On Rise Time td(off) Turn–Off Delay Time tf Turn–Off Fall Time Qg Total Gate Charge Qgs Gate–Source Charge Qgd Gate–Drain Charge 240 pF 106 pF VGS = 15 mV, f = 1.0 MHz 5.6 Ω VDD = –10 V, VGS = –4.5 V, 15 27 ns 15 27 ns 40 64 ns 25 40 ns 12 20 nC (Note 2) VDS = –10 V, VGS = –4.5 V ID = –1 A, RGEN = 6 Ω ID = –2.4 A, 2 nC 2 nC Drain–Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain–Source Diode Forward Current VSD Drain–Source Diode Forward Voltage Reverse Recovery Time trr Qrr Reverse Recovery Charge VGS = 0 V, IS = –0.42 (Note 2) IF = –2.4 A, diF/dt = 100 A/µs –0.6 –0.42 A –1.2 V 18 ns 7 nC Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) 250°C/W when mounted on a 0.02 in2 pad of 2 oz. copper. b) 270°C/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% http://www.twtysemi.com [email protected] 4008-318-123 2of 2