SMD Type Product specification FDN5618P General Description Features This 60V P-Channel MOSFET uses Fairchild’s high voltage PowerTrench process. It has been optimized for power management applications. • –1.25 A, –60 V. RDS(ON) = 0.170 Ω @ VGS = –10 V RDS(ON) = 0.230 Ω @ VGS = –4.5 V Applications • Fast switching speed • DC-DC converters • High performance trench technology for extremely low RDS(ON) • Load switch • Power management D D S TM SuperSOT -3 Absolute Maximum Ratings Symbol S G G TA=25oC unless otherwise noted Ratings Units VDSS Drain-Source Voltage Parameter –60 V VGSS Gate-Source Voltage ±20 V ID Drain Current –1.25 A – Continuous (Note 1a) – Pulsed –10 Maximum Power Dissipation PD TJ, TSTG (Note 1a) 0.5 (Note 1b) 0.46 W –55 to +150 °C (Note 1a) 250 °C/W (Note 1) 75 °C/W Operating and Storage Junction Temperature Range Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient RθJC Thermal Resistance, Junction-to-Case Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity 618 FDN5618P 7’’ 8mm 3000 units http://www.twtysemi.com 4008-318-123 1 of 2 SMD Type Product specification FDN5618P Electrical Characteristics Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units –58 mV/°C Off Characteristics -60 V BVDSS Drain–Source Breakdown Voltage VGS = 0 V, ID = –250 µA ∆BVDSS ===∆TJ IDSS Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current ID = –250 µA,Referenced to 25°C VDS = –48 V, VGS = 0 V –1 µA IGSSF Gate–Body Leakage, Forward VGS = 20V, VDS = 0 V 100 nA IGSSR Gate–Body Leakage, Reverse VGS = –20 V VDS = 0 V –100 nA –3 V On Characteristics (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = –250 µA –1 –1.6 ∆VGS(th) ===∆TJ RDS(on) Gate Threshold Voltage Temperature Coefficient ID = –250 µA,Referenced to 25°C 4 Static Drain–Source On–Resistance 0.148 0.185 0.245 ID(on) On–State Drain Current VGS = –10 V, ID = –1.25 A VGS = –4.5 V, ID = –1.0 A VGS = –10 V, ID = –3 A TJ=125°C VGS = –10 V, VDS = –5 V gFS Forward Transconductance VDS = –5 V, ID = –1.25 A 4.3 VDS = –30 V, f = 1.0 MHz V GS = 0 V, 430 pF 52 pF 19 pF mV/°C 0.170 0.230 0.315 –5 Ω A S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Switching Characteristics td(on) Turn–On Delay Time tr Turn–On Rise Time td(off) Turn–Off Delay Time tf Turn–Off Fall Time Qg Total Gate Charge Qgs Gate–Source Charge Qgd Gate–Drain Charge (Note 2) VDD = –30 V, VGS = –10 V, VDS = –30 V, VGS = –10 V ID = –1 A, RGEN = 6 Ω ID = –1.25 A, 6.5 13 ns 8 16 ns 16.5 30 ns 4 8 ns 8.6 13.8 nC 1.5 nC 1.3 nC Drain–Source Diode Characteristics and Maximum Ratings IS VSD Maximum Continuous Drain–Source Diode Forward Current Drain–Source Diode Forward VGS = 0 V, IS = –0.42 Voltage (Note 2) –0.7 –0.42 –1.2 A V Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) 250°C/W when mounted on a 0.02 in2 pad of 2 oz. copper. b) 270°C/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width ≤=300 µs, Duty Cycle ≤=2.0 http://www.twtysemi.com 4008-318-123 2 of 2