Product specification IRLML6346TRPbF HEXFET® Power MOSFET VDS 30 V VGS Max ± 12 V 63 m 80 m RDS(on) max (@VGS = 4.5V) RDS(on) max (@VGS = 2.5V) * ' 6 Micro3TM (SOT-23) IRLML6346TRPbF Application(s) Load/ System Switch Features and Benefits Features Benefits Industry-standard SOT-23 Package results in Multi-vendor compatibility RoHS compliant containing no lead, no bromide and no halogen MSL1, Consumer Qualification Ö Environmentally friendly Increased Reliability Absolute Maximum Ratings Symbol VDS Parameter Max. Units 30 V ID @ TA = 25°C Drain-Source Voltage Continuous Drain Current, VGS @ 10V 3.4 ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 2.7 IDM Pulsed Drain Current 17 PD @TA = 25°C Maximum Power Dissipation 1.3 PD @TA = 70°C Maximum Power Dissipation 0.8 Linear Derating Factor 0.01 VGS Gate-to-Source Voltage ± 12 W/°C V TJ, TSTG Junction and Storage Temperature Range -55 to + 150 °C A W Thermal Resistance Symbol Parameter e RJA Junction-to-Ambient RJA Junction-to-Ambient (t<10s) http://www.twtysemi.com f [email protected] Typ. Max. ––– 100 ––– 99 Units °C/W 1 of 2 Product specification IRLML6346TRPbF Electric Characteristics @ TJ = 25°C (unless otherwise specified) Symbol V(BR)DSS Parameter Min. Typ. Max. Units Drain-to-Source Breakdown Voltage V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage IDSS IGSS Drain-to-Source Leakage Current 30 ––– ––– ––– 0.02 ––– ––– 46 63 ––– 59 80 0.5 0.8 1.1 ––– ––– 1.0 ––– ––– 150 V Conditions VGS = 0V, ID = 250μA V/°C Reference to 25°C, ID = 1mA m V μA VGS = 4.5V, ID = 3.4A VGS = 2.5V, ID = 2.7A VDS = VGS, ID = 10μA VDS =24V, VGS = 0V VDS = 24V, VGS = 0V, TJ = 125°C Gate-to-Source Forward Leakage ––– ––– 100 Gate-to-Source Reverse Leakage ––– ––– -100 RG Internal Gate Resistance ––– 3.9 ––– gfs Qg Forward Transconductance 9.5 ––– ––– S Total Gate Charge ––– 2.9 ––– Qgs Gate-to-Source Charge ––– 0.13 ––– Qgd Gate-to-Drain ("Miller") Charge ––– 1.1 ––– VGS = 4.5V td(on) Turn-On Delay Time ––– 3.3 ––– VDD =15V tr Rise Time ––– 4.0 ––– td(off) Turn-Off Delay Time ––– 12 ––– tf Fall Time ––– 4.9 ––– Ciss Input Capacitance ––– 270 ––– Coss Output Capacitance ––– 32 ––– Crss Reverse Transfer Capacitance ––– 21 ––– nA d d VGS = 12V VGS = -12V VDS = 10V, ID = 3.4A ID = 3.4A nC ns VDS =15V ID = 1.0A d d RG = 6.8 VGS = 4.5V VGS = 0V pF VDS = 24V ƒ = 1.0MHz Source - Drain Ratings and Characteristics Symbol Parameter IS Continuous Source Current ISM (Body Diode) Pulsed Source Current Min. Typ. Max. Units ––– ––– 1.3 ––– 17 VSD (Body Diode) Diode Forward Voltage ––– ––– ––– 1.2 V trr Reverse Recovery Time ––– 8.8 13 ns Qrr Reverse Recovery Charge ––– 2.7 4.1 nC c http://www.twtysemi.com A [email protected] Conditions MOSFET symbol showing the integral reverse D G p-n junction diode. TJ = 25°C, IS = 3.4A, VGS = 0V TJ = 25°C, VR = 24V, IF=1.3A di/dt = 100A/μs S d d 2 of 2