IC IC MOSFET MOSFET SMDType Type SMD Product specification KDV303N SOT-23 ■ Features Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 ● 0.68 A, 25 V. RDS(ON) = 0.45 Ω @ VGS = 4.5 V 1 operation in 3V circuits. VGS(th) < 1.5V. 0.55 ● Very low level gate drive requirements allowing direct +0.1 1.3-0.1 +0.1 2.4-0.1 RDS(ON) = 0.6Ω @ VGS = 2.7 V. 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 ● Gate-Source Zener for ESD ruggedness. +0.05 0.1-0.01 D 0-0.1 S G +0.1 0.38-0.1 +0.1 0.97-0.1 ＞6kV Human Body Model 1.Base 1. Gate 2.Emitter 2. Source 3. Drain 3.collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Drain to Source Voltage VDSS 25 V Gate to Source Voltage VGSS 8 V 0.68 A Drain Current- Continuous ID Drain Current- pulse Power Dissipation for Single Operation Operating and Storage Junction Temperature Range Thermal Resistance, Junction-to- Ambient http://www.twtysemi.com Unit 2 A PD 0.35 W TJ, Tstg -55 to +150 ℃ RθJA 357 ℃/W [email protected] 4008-318-123 1 of 4 MOSFET IC IC IC MOSFET MOSFET SMD SMDType Type SMD Type Product specification KDV303N ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Drain-Source Breakdown Voltage VDSS Zero Gate Voltage Drain Current IDSS Gate-Body Leakage Current,Forward IGSSF Testconditons VGS = 0 V, ID = 250 μA Min 25 V 1 μA VDS =20 V, VGS = 0 V,TJ=55℃ μA VGS = 8V, VDS = 0 V 100 nA IGSSR VGS = -8 V, VDS = 0 V VGS(th) VDS = VGS, ID = 250 μA 0.65 VGS = 4.5V, ID =0.5A RDS(on) VGS = 4.5V, ID = 0.2A, TJ =125℃ VGS = 2.7V, ID =0.2 A ID(on) Unit 10 Gate-Body Leakage Current,Reverse On-State Drain Current * Max VDS =20 V, VGS = 0 V Gate Threshold Voltage * Static Drain-Source On-Resistance* Typ VGS = 2.7 V, VDS =5 V -100 nA 0.8 1.5 V 0.33 0.45 Ω 0.52 0.8 Ω 0.44 0.6 Ω 0.5 A Forward Transconductance * gFS VDS = 5V, ID = 0.5 A 1.45 S Input Capacitance Ciss VDS = 10 V, 50 pF Output Capacitance Coss VGS = 0 V, 28 pF Reverse Transfer Capacitance Crss f = 1.0 MHz 9 Turn-On Delay Time td(on) VDD = 6V, ID =0.5A, 3 6 ns Turn-On Rise Time tr 8.5 18 ns Turn-Off Delay Time VGS = 4.5V, RGEN = 50Ω pF td(off) 17 30 ns Turn-Off Fall Time tf 13 25 ns Total Gate Charge Qg VDS = 5 V, ID = 0.5A, 1.64 2.3 nC Gate-Source Charge Qgs VGS = 4.5V, 0.38 nC Gate-Drain Charge Qgd 0.45 nC Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode ForwardVoltage IS VSD VGS = 0 V, IS = 0.5 A 0.83 0.3 A 1.2 V * Pulse Test: Pulse Width ＜ 300μs, Duty Cycle ＜ 2.0%. http://www.twtysemi.com [email protected] 4008-318-123 2 of 4 IC IC IC MOSFET MOSFET SMDType Type SMD Product specification KDV303N Typical Characteristics 2 VGS = 4.5V 3.5 3.0 2.7 1.2 2.5 R DS(on) , NORMALIZED DRAIN-SOURCE ON-RESISTANCE I D , DRAIN-SOURCE CURRENT (A) 1.5 2.0 0.9 0.6 1.5 0.3 0 VGS = 2.0V 1.5 2.7 0.5 1 1.5 3.5 4.5 2 0 0.2 0.6 0.8 1 1.2 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. Figure 1. On-Region Characteristics. 1.6 2 ID= 0.5A I D =0.5 A VGS = 4.5 V 1.4 R DS(on) , ON-RESISTANCE (OHM) R DS(ON), NORMALIZED 0.4 I D , DRAIN CURRENT (A) VDS , DRAIN-SOURCE VOLTAGE (V) DRAIN-SOURCE ON-RESISTANCE 3.0 1 0.5 0 2.5 1.2 1 0.8 0.6 -50 -25 0 25 50 75 100 TJ , JUNCTION TEMPERATURE (°C) 125 150 Figure 3. On-Resistance Variation 1.6 1.2 0.8 125°C 25°C 0.4 0 1 1.5 2 2.5 3 3.5 4 VGS , GATE TO SOURCE VOLTAGE (V) 4.5 5 Figure 4. On Resistance Variation with with Temperature. Gate-To- Source Voltage. 1 T = -55°C J 0.8 1 25°C IS , REVERSE DRAIN CURRENT (A) ID , DRAIN CURRENT (A) V DS = 5.0V 125°C 0.6 0.4 0.2 0 0 0.5 1 1.5 2 2.5 VGS , GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. http://www.twtysemi.com [email protected] V GS = 0V TJ = 125°C 0.1 25°C -55°C 0.01 0.001 0.0001 0 0.2 0.4 0.6 0.8 1 1.2 VSD , BODY DIODE FORWARD VOLTAGE (V) Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. 4008-318-123 3 of 4 IC IC MOSFET MOSFET SMDType Type SMD Product specification KDV303N 5 V GS , GATE-SOURCE VOLTAGE (V) 150 VDS = 5V I D = 0.5A 100 10V 4 CAPACITANCE (pF) 15V 3 2 Ciss 50 Coss 20 10 f = 1 MHz V GS = 0V C rss 1 0 5 0.1 0 0.4 0.8 1.2 1.6 0.5 2 V DS 1 2 5 10 25 , DRAIN TO SOURCE VOLTAGE (V) Q g , GATE CHARGE (nC) Figure 8. Capacitance Characteristics. Figure 7. Gate Charge Characteristics. 5 5 1m s 10m s IT LIM N) O S( RD 1 10 0.3 0m s 1s 10 0.1 0.01 0.1 0.2 0.5 V DS s 2 1 1 2 5 10 20 0 0.001 40 0.01 0.1 1 10 100 300 SINGLE PULSE TIME (SEC) , DRAI N-SOURCE VOLTAGE (V) Figure 9. Maximum Safe Operating Area. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 3 DC V GS = 4.5V SINGLE PULSE R θJA =357°C/W TA = 25°C 0.03 SINGLE PULSE R θJA =357° C/W T A = 25°C 4 POWER (W) I D , DRAIN CURRENT (A) 3 Figure 10. Single Pulse Maximum Power Dissipation. 1 0.5 D = 0.5 0.2 0.2 0.1 0.1 0.05 0.05 0.02 0.02 0.01 0.005 R θJA (t) = r(t) * R θJA R θJA = 357 °C/W P(pk) 0.01 t1 Single Pulse 0.002 0.001 0.0001 t2 TJ - TA = P * R θJA(t) Duty Cycle, D = t1 /t2 0.001 0.01 0.1 1 10 100 300 t1 , TIME (sec) Figure 11. Transient Thermal Response Curve. http://www.twtysemi.com [email protected] 4008-318-123 4 of 4