TYSEMI KI2306DS

Transistors
IC
SMD Type
Product specification
KI2306 DS
SOT-23
Unit: mm
+0.1
2.9-0.1
+0.1
0.4-0.1
Features
1
0.55
+0.1
1.3-0.1
+0.1
2.4-0.1
100% Rg Tested
0.4
3
TrenchFET Power MOSFET
2
+0.1
0.95-0.1
+0.1
1.9-0.1
+0.05
0.1-0.01
0-0.1
G
S
+0.1
0.38-0.1
+0.1
0.97-0.1
D
1.Base
1.
Gate
2.Emitter
2.
Source
3.
Drain
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Drain-source voltage
VDS
30
Gate-source voltage
VGS
Continuous drain current (TJ = 150 ) *1,2 TA=25
-TA=70
ID
Pulsed drain current
20
3.5
2.8
Unit
V
V
A
IDM
16
A
Continuous source current (diode conduction) *1,2
IS
1.25
A
Maximum Power dissipation *1,2
--
PD
1.25
0.8
W
Tj,Tstg
-55 to +150
TA=25
TA=70
Operating junction and storage temperature range
Maximum Junction to Ambienta
t
5 sec
RthJA
Steady State
100
130
/W
*1 Surface Mounted on FR4 Board.
*2 t
5 sec
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Transistors
IC
MOSFET
SMD Type
Product specification
KI2306 DS
Electrical Characteristics Ta = 25
Parameter
Symbol
Drain-source breakdown voltage
Testconditons
Min
V(BR)DSS VGS = 0 V, ID = 250 ìA
Gate threshold voltage
VGS(th)
Gate-body leakage
IGSS
Zero gate voltage drain current
IDSS
On-state drain current
ID(on)
Drain-source on-state resistance
rDS(on)
Max
30
VDS = VGS, ID = 250 ìA
VDS = 0 V, VGS =
Typ
Unit
V
1
20 V
100
VDS = 30V, VGS = 0 V
0.5
VDS =30V, VGS = 0 V, TJ = 55
10
VDS
4.5 V, VGS = 10 V
6
VDS
4.5 V, VGS = 4.5 V
4
nA
ìA
A
VGS = 10 V, ID = 3.5 A
0.046 0.057
VGS =4.5 V, ID =2.8 A
0.070 0.094
Ù
Forward transconductance
gfs
VDS =4.5 V, ID = 3.5 A
Diode forward voltage
VSD
IS = 1.25 A, VGS = 0 V
0.8
1.2
V
gate charge *
Qg
VDS = 15V ,VGS =5V , ID= 3.5 A
4.2
7
nC
Total gate charge *
Qgt
8.5
20
Gate-source charge *
Qgs
Gate-drain charge *
Qgd
Gate Resistance
Rg
Input capacitance *
Ciss
Output capacitance *
Coss
Reverse transfer capacitance *
Crss
Turn-on time
VDS = 15V ,VGS = 10 V , ID= 3.5 A
300 ìs duty cycle
nC
1.9
1.35
0.5
2.4
Ù
555
VDS = 15V ,VGS = 0 , f = 1 MHz
pF
120
60
9
20
tr
7.5
18
17
35
5.2
12
VDD = 15V , RL = 15Ù ,
ID = 1A , VGEN =-10V , RG = 6Ù
tf
* Pulse test: PW
S
td(on)
td(off)
Turn-off time
6.9
ns
2%.
Marking
Marking
A6SUB
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Transistors
IC
SMD Type
Product specification
KI2306 DS
■ Typical Characteristics
Output Characteristics
16
VGS = 10 thru 5 V
12
I D - Drain Current (A)
I D - Drain Current (A)
12
Transfer Characteristics
16
4V
8
4
8
TC = 125_C
4
25_C
3 thru 1 V
0
- 55_C
0
0
2
4
6
8
10
0
1
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
0.5
2
3
4
5
VGS - Gate-to-Source Voltage (V)
Capacitance
800
C - Capacitance (pF)
r DS(on) - On-Resistance ( W )
700
0.4
0.3
0.2
500
400
300
Coss
200
VGS = 4.5 V
0.1
Ciss
600
VGS = 10 V
100
0.0
Crss
0
0
4
8
12
0
16
6
Gate Charge
r DS(on) - On-Resistance (W)
(Normalized)
V GS - Gate-to-Source Voltage (V)
1.6
VDS = 15V
ID = 3.5 A
8
6
4
2
0
0
2
4
6
8
10
Qg - Total Gate Charge (nC)
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18
24
30
VDS - Drain-to-Source Voltage (V)
ID - Drain Current (A)
10
12
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1.4
On-Resistance vs. Junction Temperature
VGS = 10 V
ID = 3.5 A
1.2
1.0
0.8
0.6
- 50
- 25
0
25
50
75
100
125
150
TJ - Junction Temperature (_C)
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Transistors
IC
SMD Type
Product specification
KI2306 DS
Source-Drain Diode Forward Voltage
0.4
r DS(on) - On-Resistance ( W )
I S - Source Current (A)
On-Resistance vs. Gate-to-Source Voltage
0.5
10
TJ = 150_C
TJ = 25_C
0.3
0.2
ID = 3.5 A
0.1
0.0
1
0.00
0.2
0.4
0.6
1.0
0.8
0
1.2
VSD - Source-to-Drain Voltage (V)
2
4
8
10
VGS - Gate-to-Source Voltage (V)
Threshold Voltage
Single Pulse Power
0.4
12
ID = 250 mA
0.2
10
8
- 0.0
Power (W)
V GS(th) Variance (V)
6
- 0.2
6
- 0.4
4
- 0.6
2
- 0.8
- 50
- 25
0
25
50
75
100
125
TA = 25_C
0
150
0.01
0.1
10
1
TJ - Temperature (_C)
100
500
Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.1
0.2
Notes:
0.1
PDM
0.05
t1
t2
1. Duty Cycle, D =
0.02
t1
t2
2. Per Unit Base = RthJA = 130_C/W
3. TJM - TA = PDMZthJA(t)
4. Surface Mounted
Single Pulse
0.01
10 -4
10 -3
10 -2
10 -1
1
10
100
500
Square Wave Pulse Duration (sec)
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