TYSEMI KMDF2C03HD

Transistors
IC
IC
SMD Type
Product specification
KMDF2C03HD
Features
Ultra Low RDS(on) Provides Higher Efficiency and Extends
Battery Life
Logic Level Gate Drive ? Can Be Driven by Logic ICs
Diode Is Characterized for Use In Bridge Circuits
Diode Exhibits High Speed, With Soft Recovery
IDSS Specified at Elevated Temperature
Avalanche Energy Specified
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Drain-source voltage
VDSS
Gate-source voltage
VGSS
Drain current Continuous
Drain current Pulsed *1
Operating and Storage Temperature Range
Total power dissipation
Thermal Resistance ? Junction to Ambient
Single Pulse Drain?to?Source Avalanche
N-Channel
P-Channel
30
4.1
IDM
21
TJ, Tstg
-55 to 150
PD
2
R
V
3
A
15
A
W
62.5
JA
EAS
V
20
ID
324 *2
Unit
/W
324 *3
mJ
Energy - Starting TJ = 25
*1 Pw 10 s, Duty cycle 1%
*2 VDD = 30 V, VGS = 5.0 V, Peak IL = 9.0,Apk, L = 8.0 mH, RG = 25
*3 VDD = 30 V, VGS = 5.0 V, Peak IL = 6.0,Apk, L = 18 mH, RG = 25
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4008-318-123
1 of 3
Transistors
IC
IC
SMD Type
Product specification
KMDF2C03HD
Electrical Characteristics Ta = 25
Parameter
Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain current
IGSS
VGS= 20V,VDS=0V
V(BR) DSS
ID=250 A,VGS=0V
IDSS
Gate threshold voltage *1
VGS (th)
Static drain-source on-state
resistance *1
RDS (on)
Static drain-source on-state
resistance *1
RDS (on)
Forward Transconductance
gFS
Input capacitance
Ciss
Output capacitance
Coss
Reverse transfer capacitance
Crss
Turn-on delay time
td (on)
Rise time
Turn-off delay time *1
Fall time *1
Turn-on delay time *1
Rise time *1
Turn-off delay time *1
Fall time *1
Total Gate Charge *2
Testconditons
Symbol
tr
td (off)
tf
td (on)
tr
td (off)
tf
QT
VDS=30V,VGS=0V
VDS = VGS, ID = 250 A
ID=3.0A,VGS=10A
ID=1.5A,VGS=4.5V
ID=2.0A,VGS=10V
ID=1.0A,VGS=4.5V
Q1
Q2
Max
N-Ch
100
P-Ch
100
N-Ch
30
P-Ch
30
N-Ch
1
P-Ch
1
N-Ch
1.0
1.7
3.0
P-Ch
1.0
1.5
2.0
0.06
0.070
0.17
0.200
N-Ch
P-Ch
3.6
P-Ch
2.0
3.4
N-Channel
N-Ch
450
630
VDS=24V,VGS=0V,f=1MHz
P-Ch
397
550
V
S
N-Ch
160
225
P-Channel
P-Ch
189
250
VDS=24V,VGS=0V,f=1MHz
N-Ch
35
70
P-Ch
64
126
ID=3.0A,VDD=15V
N-Ch
12
24
ID=2.0A,VDD=-15V
P-Ch
16
32
N-Channel
N-Ch
65
130
VGS=4.5V,RG=9.1
P-Ch
18
36
N-Ch
16
32
P-Channel
P-Ch
63
126
VGS=4.5V,,RG=6.0
N-Ch
19
38
P-Ch
194
390
ID=3.0A,VDD=15V
N-Ch
8.0
16
ID=2.0A,VDD=-15V
P-Ch
9.0
18
N-Channel
N-Ch
15
30
VGS=10V,RG=9.1
P-Ch
10
20
N-Ch
30
60
P-Channel
P-Ch
81
162
VGS=10V,,RG=6.0
N-Ch
23
46
P-Ch
192
384
N-Ch
11.5
16
19
P-Ch
14.2
N-Ch
1.5
P-Channel
P-Ch
1.1
VDS = 24 V, ID = 2.0 A,VGS=10V
N-Ch
3.5
[email protected]
A
0.225 0.300
ID=1.0A,VDS=3V
Q3
nA
0.065 0.075
2.0
N-Channel
Unit
V
N-Ch
Gate?Drain Charge *2
http://www.twtysemi.com
Typ
ID=1.5A,VDS=3.0V
VDS=10V,ID=3.0A,VGS=10 V
Gate?Source Charge *2
Min
P-Ch
4.5
N-Ch
2.8
P-Ch
3.5
4008-318-123
pF
pF
pF
ns
ns
ns
ns
ns
ns
ns
ns
nC
2 of 3
IC
Transistors
IC
SMD Type
Product specification
KMDF2C03HD
Electrical Characteristics Ta = 25
Parameter
Forward Voltage *1
Testconditons
Symbol
VSD
Typ
Max
IS=3.0 A,VGS=0V
N-Ch
0.82
1.2
IS=2.0 A,VGS=0 V
P-Ch
1.82
2
N-Ch
24
P-Ch
42
N-Ch
17
P-Ch
16
trr
Reverse Recovery Time
ta
IF = IS,dIS/dt = 100 A/
s
tb
Reverse Recovery Storage Charge
*1 Pulse Test: Pulse Width 3 300
QRR
s, Duty Cycle
Min
N-Ch
7
P-Ch
26
N-Ch
0.025
P-Ch
0.043
Unit
V
ns
C
2%.
*2 Switching characteristics are independent of operating junction temperature.
http://www.twtysemi.com
[email protected]
4008-318-123
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