Transistors IC IC SMD Type Product specification KRF7309 Features Generation V Technology Ultra Low On-Resistance Dual N and P Channel Mosfet Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching Absolute Maximum Ratings Ta = 25 Parameter Symbol N-Channel P-Channel 10 Sec. Pulse Drain Current, VGS @ 10V Ta = 25 ID 4.7 -3.5 Continuous Drain Current VGS @ 10V Ta = 25 ID 4.0 -3.0 Continuous Drain Current VGS @ 10V Ta = 70 ID 3.2 -2.4 Pulsed Drain Current *1 IDM 16 Power Dissipation PD @Ta= 25 *3 W 0.011 Peak Diode Recovery dv/dt *2 dv/dt Gate-to-Source Voltage VGS Junction and Storage Temperature Range Junction-to-Amb. (PCB Mount, steady state)*4 W/ 6.9 -6.0 20 V/ ns V -55 to + 150 TJ, TSTG R A -12 1.4 Linear Derating Factor (PCB Mount)*4 Unit 90 JA /W *1 Repetitive rating; pulse width limited by max. junction temperature. *2 N-Channel ISD P-Channel ISD *3 Pulse width 2.4A, di/dt -1.8A, di/dt 73A/ 90A/ 300 s; duty cycle s, VDD s, VDD V(BR)DSS, TJ V(BR)DSS, TJ 150 150 2%. *4 When mounted on 1" square PCB (FR-4 or G-10 Material). http://www.twtysemi.com [email protected] 4008-318-123 1 of 3 Transistors IC IC SMD Type Product specification KRF7309 Electrical Characteristics Ta = 25 Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Testconditons Symbol 30 VGS = 0V, ID = -250 A P-Ch -30 V(BR)DSS/ ID = 1mA,Reference to 25 N-Ch 0.032 TJ ID = -1mA,Reference to 25 P-Ch -0.037 V(BR)DSS RDS(on) VGS = 4.5V, ID = 2.0A*1 VGS = -10V, ID = -1.8A*1 VGS = -4.5V, ID = -1.5A*1 Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current VGS(th) gfs IDSS IGSS Total Gate Charge Qg Gate-to-Source Charge Qgs Gate-to-Drain ("Miller") Charge Qgd Turn-On Delay Time td(on) Rise Time Turn-Off Delay Time tr td(off) Fall Time tf Internal Drain Inductace LD Internal Source Inductance Input Capacitance LS Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss http://www.twtysemi.com Max V/ 0.050 0.080 0.10 P-Ch 0.16 N-Ch 1.0 VDS = VGS, ID = -250 A P-Ch -1.0 V VDS =15V, ID = 2.4A*1 N-Ch 5.2 VDS = -24V, ID = -1.8A*1 P-Ch 2.5 VDS = 24V, VGS = 0V N-Ch 1.0 VDS = -24V, VGS = 0V P-Ch -1.0 VDS = 24V, VGS = 0V, TJ = 125 N-Ch 25 P-Ch -25 VGS = 20V S N-Ch 100 P-Ch 100 N-Channel N-Ch 25 ID =2.6A,VDS = 16V,VGS =4.5V P-Ch 25 N-Ch 2.9 P-Channel P-Ch 2.9 ID = -2.2A,VDS = -16V,VGS = -4.5V N-Ch 7.9 P-Ch 9.0 N-Channel N-Ch 6.8 VDD = 10V,ID = 2.6A,RG = 6.0 P-Ch 11 RD = 3.8 N-Ch 21 P-Channel P-Ch 17 VDD = -10V,ID = -2.2A,RG = 6.0 N-Ch 22 RD = 4.5 P-Ch 25 N-Ch 7.7 P-Ch 18 N-Ch 4.0 Between lead tip P-Ch 4.0 and center of die contact N-Ch 6.0 P-Ch 6.0 N-Channel N-Ch 520 VGS = 0V,VDS = 15V,f = 1.0MHz P-Ch 440 N-Ch 180 P-Channel P-Ch 200 VGS = 0V,VDS = -15V,f = 1.0MHz N-Ch 72 P-Ch 93 [email protected] Unit V N-Ch VDS = VGS, ID = 250 A VDS = -24V, VGS = 0V, TJ = 125 Gate-to-Source Forward Leakage Typ N-Ch VGS = 10V, ID = 2.4A*1 Static Drain-to-Source On-Resistance Min VGS = 0V, ID = 250 A 4008-318-123 A nA nC ns nH pF 2 of 3 IC Transistors IC SMD Type Product specification KRF7309 Electrical Characteristics Ta = 25 Parameter Continuous Source Current Pulsed Source Current ISM Body Diode) *2 VSD Reverse Recovery Time trr Reverse RecoveryCharge Qrr Forward Turn-On Time ton 300 s; duty cycle Min IS Body Diode) Diode Forward Voltage *1 Pulse width Testconditons Symbol Typ Max N-Ch 1.8 P-Ch -1.8 N-Ch 16 P-Ch -12 TJ = 25 , IS = 1.8A, VGS = 0V*1 N-Ch 1.0 TJ = 25 , IS = -1.8A, VGS = 0V*1 P-Ch -1.0 N-Channel TJ = 25 , IF =2.6A,di/dt = 100A/ s*1 P-Channel TJ=25 ,IF=-2.2A,di/dt=-100A/ s*1 Intrinsic turn-on time is neglegible (turn-on is dominated by LS+LD) N-Ch 47 71 P-Ch 53 80 N-Ch 56 84 P-Ch 66 99 Unit A V ns nC N-Ch P-Ch 2%. *2 Repetitive rating; pulse width limited by max. junction temperature. http://www.twtysemi.com [email protected] 4008-318-123 3 of 3