Transistors IC IC SMD Type Product specification KRF7105 Features Advanced Process Technology Ultra Low On-Resistance Dual N and P Channel Mosfet Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching Absolute Maximum Ratings Ta = 25 Parameter Symbol N-Channel P-Channel Continuous Drain Current VGS @ 10V Ta = 25 ID 3.5 -2.3 Continuous Drain Current VGS @ 10V Ta = 70 ID 2.8 -1.8 Pulsed Drain Current *1 IDM 14 -10 Power Dissipation 2.0 PD @Tc= 25 Peak Diode Recovery dv/dt *2 dv/dt Gate-to-Source Voltage VGS Junction and Storage Temperature Range Maximum Junction-to-Ambient*3 W/ 3.0 -3.0 20 V/ ns V -55 to + 150 TJ, TSTG R A W 0.016 Linear Derating Factor Unit 62.5 JA /W *1 Repetitive rating; pulse width limited by max. junction temperature. *2 N-Channel ISD P-Channel ISD 3.5A, di/dt -2.3A, di/dt 90A/ 90A/ *3 Surface mounted on FR-4 board, t http://www.twtysemi.com s, VDD s, VDD V(BR)DSS, TJ V(BR)DSS, TJ 150 150 10sec. [email protected] 4008-318-123 1 of 3 IC Transistors IC SMD Type Product specification KRF7105 Electrical Characteristics Ta = 25 Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Testconditons Symbol 25 VGS = 0V, ID = -250 A P-Ch -20 V(BR)DSS/ ID = 1mA,Reference to 25 N-Ch 0.030 TJ ID = -1mA,Reference to 25 P-Ch -0.015 V(BR)DSS RDS(on) VGS = 4.5V, ID = 0.5A*1 VGS = -10V, ID = -1.0A*1 VGS = -4.5V, ID = -0.50A*1 Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage VGS(th) gfs IDSS IGSS Total Gate Charge Qg Gate-to-Source Charge Qgs Gate-to-Drain ("Miller") Charge Qgd Turn-On Delay Time td(on) Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductace Internal Source Inductance tr td(off) LD LS Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Max V/ 0.083 0.10 N-Ch P-Ch 0.14 0.16 0.16 0.25 0.30 0.40 N-Ch 1.0 3.0 VDS = VGS, ID = -250 A P-Ch -1.0 -3.0 VDS =15V, ID = 3.5A*1 N-Ch 4.3 VDS = -15V, ID = -3.5A*1 P-Ch 3.1 VDS = 20V, VGS = 0V N-Ch 2.0 VDS = -20V, VGS = 0V P-Ch -2.0 VDS = 20V, VGS = 0V, TJ = 55 N-Ch 25 VDS = -20V, VGS = 0V, TJ = 55 P-Ch -25 VGS = 20V N-Ch 100 P-Ch 100 N-Ch 9.4 27 ID =2.3A,VDS = 12.5V,VGS =10V *1 P-Ch 10 25 N-Ch 1.7 P-Channel P-Ch 1.9 ID = -2.3A,VDS = -12.5V,VGS = -10V *1 N-Ch 3.1 P-Ch 2.8 N-Channel N-Ch 7.0 VDD = 25V,ID = 1.0A,RG = 6.0 P-Ch 12 RD = 25 N-Ch 9.0 P-Channel P-Ch 13 VDD = -25V,ID = -1.0A,RG = 6.0 N-Ch 45 P-Ch 45 N-Ch 25 RD = 25 1*1 P-Ch 37 N-Ch 4.0 Between lead,6mm(0.25in.)from P-Ch 4.0 packing and center of die contact N-Ch 6.0 P-Ch 6.0 N-Channel N-Ch 330 VGS = 0V,VDS = 15V,f = 1.0MHz *1 P-Ch 290 N-Ch 250 P-Channel P-Ch 210 VGS = 0V,VDS = -15V,f = 1.0MHz *1 N-Ch 61 P-Ch 67 [email protected] 4008-318-123 V S N-Channel *1 Unit V VDS = VGS, ID = 250 A tf Input Capacitance http://www.twtysemi.com Typ N-Ch VGS = 10V, ID = 1.0A*1 Static Drain-to-Source On-Resistance Min VGS = 0V, ID = 250 A A nA nC ns nH pF 2 of 3 IC Transistors IC SMD Type Product specification KRF7105 Electrical Characteristics Ta = 25 Parameter Continuous Source Current Pulsed Source Current ISM Body Diode) *2 VSD Reverse Recovery Time trr Reverse RecoveryCharge Qrr Forward Turn-On Time ton 300 s; duty cycle Min IS Body Diode) Diode Forward Voltage *1 Pulse width Testconditons Symbol Typ Max N-Ch 2.0 P-Ch -2.0 N-Ch 14 P-Ch -9.2 TJ = 25 , IS = 1.3A, VGS = 0V*1 N-Ch 1.2 TJ = 25 , IS = -1.3A, VGS = 0V*1 P-Ch -1.2 N-Channel N-Ch 36 54 TJ = 25 , IF =1.3A,di/dt = 100A/ P-Ch 69 100 s*1 P-Channel TJ=25 ,IF=-1.3A,di/dt=-100A/ s*1 Intrinsic turn-on time is neglegible (turn-on is dominated by LS+LD) N-Ch 41 75 P-Ch 90 180 Unit A V ns nC N-Ch P-Ch 2%. *2 Repetitive rating; pulse width limited by max. junction temperature. http://www.twtysemi.com [email protected] 4008-318-123 3 of 3