Transistors IC IC SMD Type Product specification KRF7307 Features Generation V Technology Ultra Low On-Resistance Dual N and P Channel Mosfet Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching Absolute Maximum Ratings Ta = 25 Parameter Symbol N-Channel P-Channel 10 Sec. Pulse Drain Current, VGS @ 4.5V Ta = 25 ID 5.7 -4.7 Continuous Drain Current VGS @ 4.5V Ta = 25 ID 5.2 -4.3 Continuous Drain Current VGS @ 4.5V Ta = 70 ID 4.1 -3.4 Pulsed Drain Current *1 IDM 21 Power Dissipation PD @Ta= 25 W 0.016 Peak Diode Recovery dv/dt *2 dv/dt Gate-to-Source Voltage VGS Junction and Storage Temperature Range 5.0 R W/ -5.0 12 V/ ns V -55 to + 150 TJ, TSTG Maximum Junction-to-Ambient*3 A -17 2.0 Linear Derating Factor (PCB Mount) Unit 62.5 JA /W *1 Repetitive rating; pulse width limited by max. junction temperature. *2 N-Channel ISD P-Channel ISD 2.6A, di/dt -2.2A, di/dt 100A/ s, VDD V(BR)DSS, TJ 150 50A/ s, VDD V(BR)DSS, TJ 150 *3 Surface mounted on FR-4 board, t http://www.twtysemi.com 10sec. [email protected] 4008-318-123 1 of 3 IC Transistors IC SMD Type Product specification KRF7307 Electrical Characteristics Ta = 25 Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Testconditons Symbol VGS = 0V, ID = 250 A N-Ch 20 P-Ch -20 V(BR)DSS/ ID = 1mA,Reference to 25 N-Ch 0.044 TJ ID = -1mA,Reference to 25 P-Ch -0.012 RDS(on) VGS = 2.7V, ID = 2.2A*1 VGS = -4.5V, ID = -2.2A*1 VGS = -2.7V, ID = -1.8A*1 Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current VGS(th) gfs IDSS IGSS Total Gate Charge Qg Gate-to-Source Charge Qgs Gate-to-Drain ("Miller") Charge Qgd Turn-On Delay Time td(on) Rise Time Turn-Off Delay Time tr td(off) Fall Time tf Internal Drain Inductace LD Internal Source Inductance LS Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss http://www.twtysemi.com Max V/ 0.050 N-Ch 0.070 0.090 P-Ch 0.140 N-Ch 0.70 VDS = VGS, ID = -250 A P-Ch -0.70 VDS =15V, ID = 2.6A*1 N-Ch 8.30 VDS = -15V, ID = -2.2A*1 P-Ch 4.00 VDS = 16V, VGS = 0V N-Ch 1.0 VDS = -16V, VGS = 0V P-Ch -1.0 VDS = 16V, VGS = 0V, TJ = 125 N-Ch 25 P-Ch -25 VGS = 12V V S N-Ch 100 P-Ch 100 N-Channel N-Ch 20 ID =2.6A,VDS = 16V,VGS =4.5V *1 P-Ch 22 N-Ch 2.2 P-Channel P-Ch 3.3 ID = -2.2A,VDS = -16V,VGS = -4.5V *1 N-Ch 8.0 P-Ch 9.0 N-Channel N-Ch 9.0 VDD = 10V,ID = 2.6A,RG = 6.0 P-Ch 8.4 RD = 3.8 N-Ch 42 P-Channel P-Ch 26 VDD = -10V,ID = -2.2A,RG = 6.0 N-Ch 32 P-Ch 51 *1 RD = 4.5 1*1 N-Ch 51 P-Ch 33 N-Ch 4.0 Between lead tip P-Ch 4.0 and center of die contact N-Ch 6.0 P-Ch 6.0 N-Channel N-Ch 660 VGS = 0V,VDS = 15V,f = 1.0MHz *1 P-Ch 610 N-Ch 280 P-Channel P-Ch 310 VGS = 0V,VDS = -15V,f = 1.0MHz *1 N-Ch 140 P-Ch 170 [email protected] Unit V VDS = VGS, ID = 250 A VDS = -16V, VGS = 0V, TJ = 125 Gate-to-Source Forward Leakage Typ VGS = 0V, ID = -250 A V(BR)DSS VGS = 4.5V, ID = 2.6A*1 Static Drain-to-Source On-Resistance Min 4008-318-123 A nA nC ns nH pF 2 of 3 IC Transistors IC SMD Type Product specification KRF7307 Electrical Characteristics Ta = 25 Parameter Continuous Source Current Pulsed Source Current ISM Body Diode) *2 VSD Reverse Recovery Time trr Reverse RecoveryCharge Qrr Forward Turn-On Time ton 300 s; duty cycle Min IS Body Diode) Diode Forward Voltage *1 Pulse width Testconditons Symbol Typ Max N-Ch 2.5 P-Ch -2.5 N-Ch 21 P-Ch -17 TJ = 25 , IS = 1.8A, VGS = 0V*1 N-Ch 1.0 TJ = 25 , IS = -1.8A, VGS = 0V*1 P-Ch -1.0 N-Channel N-Ch 29 44 TJ = 25 , IF =2.6A,di/dt = 100A/ P-Ch 56 84 s*1 P-Channel TJ=25 , IF=-2.2A,di/dt=-100A/ s*1 Intrinsic turn-on time is neglegible (turn-on is dominated by LS+LD) N-Ch 22 33 P-Ch 71 110 Unit A V ns nC N-Ch P-Ch 2%. *2 Repetitive rating; pulse width limited by max. junction temperature. http://www.twtysemi.com [email protected] 4008-318-123 3 of 3