TYSEMI PMV33UPE

Product specification
PMV33UPE
20 V, single P-channel Trench MOSFET
Rev. 1 — 12 June 2012
Product data sheet
1. Product profile
1.1 General description
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23
(TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET
technology.
1.2 Features and benefits
 Low threshold voltage
 Trench MOSFET technology
 Very fast switching
 2 kV ESD protected
1.3 Applications
 Relay driver
 High-side loadswitch
 High-speed line driver
 Switching circuits
1.4 Quick reference data
Table 1.
Quick reference data
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VDS
drain-source voltage
Tj = 25 °C
-
-
-20
V
VGS
gate-source voltage
ID
drain current
VGS = -4.5 V; Tamb = 25 °C; t ≤ 5 s
[1]
-8
-
8
V
-
-
-5.3
A
-
30
36
mΩ
Static characteristics
RDSon
[1]
drain-source on-state
resistance
VGS = -4.5 V; ID = -3 A; Tj = 25 °C
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2.
http://www.twtysemi.com
[email protected]
1 of 4
Product specification
PMV33UPE
20 V, single P-channel Trench MOSFET
2. Pinning information
Table 2.
Pinning information
Pin
Symbol Description
1
G
gate
2
S
source
3
D
drain
Simplified outline
Graphic symbol
D
3
1
2
G
SOT23 (TO-236AB)
S
017aaa259
3. Ordering information
Table 3.
Ordering information
Type number
PMV33UPE
Package
Name
Description
Version
TO-236AB
plastic surface-mounted package; 3 leads
SOT23
4. Marking
Table 4.
Marking codes
Type number
Marking code[1]
PMV33UPE
EJ%
[1]
% = placeholder for manufacturing site code
http://www.twtysemi.com
[email protected]
2 of 4
Product specification
PMV33UPE
20 V, single P-channel Trench MOSFET
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VDS
drain-source voltage
Tj = 25 °C
-
-20
V
VGS
gate-source voltage
drain current
ID
total power dissipation
Ptot
8
V
VGS = -4.5 V; Tamb = 25 °C; t ≤ 5 s
-
-5.3
A
VGS = -4.5 V; Tamb = 25 °C
[1]
-
-4.4
A
VGS = -4.5 V; Tamb = 100 °C
[1]
-
-2.8
A
-
-17.6
A
-
490
mW
Tamb = 25 °C; single pulse; tp ≤ 10 µs
peak drain current
IDM
-8
[1]
[2]
Tamb = 25 °C
[1]
Tsp = 25 °C
-
980
mW
-
4150
mW
Tj
junction temperature
-55
150
°C
Tamb
ambient temperature
-55
150
°C
Tstg
storage temperature
-65
150
°C
Source-drain diode
source current
IS
Tamb = 25 °C
[1]
-
-1.2
A
HBM
[3]
-
2000
V
ESD maximum rating
VESD
electrostatic discharge voltage
[1]
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2.
[2]
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.
[3]
Measured between all pins.
6. Thermal characteristics
Table 6.
Symbol
Rth(j-a)
Rth(j-sp)
Thermal characteristics
Parameter
thermal resistance
from junction to
ambient
Conditions
in free air
Min
Typ
Max
Unit
[1]
-
222
255
K/W
[2]
-
111
128
K/W
[3]
-
74
85
K/W
-
25
30
K/W
thermal resistance
from junction to solder
point
[1]
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2]
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm2.
[3]
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm2, t ≤ 5 s.
http://www.twtysemi.com
[email protected]
3 of 4
Product specification
PMV33UPE
20 V, single P-channel Trench MOSFET
7. Characteristics
Table 7.
Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
V(BR)DSS
drain-source
breakdown voltage
ID = -250 µA; VGS = 0 V; Tj = 25 °C
-20
-
-
V
VGSth
gate-source threshold
voltage
ID = -250 µA; VDS = VGS; Tj = 25 °C
-0.45
-0.7
-0.95
V
IDSS
drain leakage current
VDS = -20 V; VGS = 0 V; Tj = 25 °C
-
-
-1
µA
VDS = -20 V; VGS = 0 V; Tj = 150 °C
-
-
-15
µA
IGSS
RDSon
gfs
gate leakage current
drain-source on-state
resistance
forward
transconductance
VGS = -8 V; VDS = 0 V; Tj = 25 °C
-
-
-10
µA
VGS = 8 V; VDS = 0 V; Tj = 25 °C
-
-
-10
µA
VGS = -4.5 V; ID = -3 A; Tj = 25 °C
-
30
36
mΩ
VGS = -4.5 V; ID = -3 A; Tj = 150 °C
-
43
51
mΩ
VGS = -2.5 V; ID = -3 A; Tj = 25 °C
-
38
47
mΩ
VGS = -1.8 V; ID = -3 A; Tj = 25 °C
-
51
65
mΩ
VDS = -10 V; ID = -4.4 A; Tj = 25 °C
-
16
-
S
VDS = -10 V; ID = -4.4 A; VGS = -4.5 V;
Tj = 25 °C
-
14.7
22.1
nC
-
2.6
-
nC
-
2.5
-
nC
Dynamic characteristics
QG(tot)
total gate charge
QGS
gate-source charge
QGD
gate-drain charge
Ciss
input capacitance
Coss
output capacitance
Crss
reverse transfer
capacitance
td(on)
turn-on delay time
tr
rise time
td(off)
tf
VDS = -10 V; f = 1 MHz; VGS = 0 V;
Tj = 25 °C
VDS = -10 V; ID = -4.4 A; VGS = -4.5 V;
RG(ext) = 6 Ω; Tj = 25 °C
-
1820
-
pF
-
208
-
pF
-
146
-
pF
-
11
-
ns
-
30
-
ns
turn-off delay time
-
83
-
ns
fall time
-
39
-
ns
-
-0.7
-1.2
V
Source-drain diode
VSD
source-drain voltage
http://www.twtysemi.com
IS = -1.2 A; VGS = 0 V; Tj = 25 °C
[email protected]
4 of 4