Product specification PMV32UP 20 V, 4 A P-channel Trench MOSFET Rev. 1 — 11 March 2011 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits 1.8 V drain-source on-state resistance rated Very fast switching Trench MOSFET technology 1.3 Applications Relay driver High-side loadswitch High-speed line driver Switching circuits 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage Tj = 25 °C - - -20 V VGS gate-source voltage -8 - 8 V ID drain current - - -4 A - 32 36 mΩ VGS = -4.5 V; Tamb = 25 °C [1] Static characteristics RDSon [1] drain-source on-state resistance VGS = -4.5 V; ID = -2.4 A; Tj = 25 °C Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2. http://www.twtysemi.com [email protected] 1 of 4 Product specification PMV32UP 20 V, 4 A P-channel Trench MOSFET 2. Pinning information Table 2. Pinning information Pin Symbol Description 1 G gate 2 S source 3 D drain Simplified outline Graphic symbol D 3 G 1 2 SOT23 (TO-236AB) S 017aaa094 3. Ordering information Table 3. Ordering information Type number PMV32UP Package Name Description Version TO-236AB plastic surface-mounted package; 3 leads SOT23 4. Marking Table 4. Marking codes Type number Marking code[1] PMV32UP NF% [1] % = placeholder for manufacturing site code http://www.twtysemi.com [email protected] 2 of 4 Product specification PMV32UP 20 V, 4 A P-channel Trench MOSFET 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage Tj = 25 °C - -20 V VGS gate-source voltage drain current ID total power dissipation Ptot 8 V VGS = -4.5 V; Tamb = 25 °C - -4 A VGS = -4.5 V; Tamb = 100 °C [1] - -2.5 A - -16 A [2] - 510 mW [1] - 930 mW Tamb = 25 °C; single pulse; tp ≤ 10 µs peak drain current IDM -8 [1] Tamb = 25 °C - 4150 mW Tj junction temperature Tsp = 25 °C -55 150 °C Tamb ambient temperature -55 150 °C Tstg storage temperature -65 150 °C - -1 A Source-drain diode source current IS [1] Tamb = 25 °C [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. 6. Thermal characteristics Table 6. Symbol Rth(j-a) Rth(j-sp) Thermal characteristics Parameter thermal resistance from junction to ambient Conditions in free air Min Typ Max Unit [1] - 207 245 K/W [2] - 117 135 K/W - 25 30 K/W thermal resistance from junction to solder point [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm2. http://www.twtysemi.com [email protected] 3 of 4 Product specification PMV32UP 20 V, 4 A P-channel Trench MOSFET 7. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit Static characteristics V(BR)DSS drain-source breakdown voltage ID = -250 µA; VGS = 0 V; Tj = 25 °C -20 - - V VGSth gate-source threshold voltage ID = -250 µA; VDS = VGS; Tj = 25 °C -0.45 -0.7 -0.95 V IDSS drain leakage current VDS = -20 V; VGS = 0 V; Tj = 25 °C - - -1 µA VDS = -20 V; VGS = 0 V; Tj = 150 °C - - -10 µA IGSS gate leakage current VGS = -8 V; VDS = 0 V; Tj = 25 °C - - -100 nA RDSon drain-source on-state resistance VGS = -4.5 V; ID = -2.4 A; Tj = 25 °C - 32 36 mΩ VGS = -4.5 V; ID = -2.4 A; Tj = 150 °C - 46 53 mΩ VGS = -2.5 V; ID = -2.0 A; Tj = 25 °C - 40 46 mΩ gfs forward transconductance VGS = -1.8 V; ID = -1.8 A; Tj = 25 °C - 55 73 mΩ VDS = -5 V; ID = -2.4 A; Tj = 25 °C - 13 - S ID = -1 A; VDS = -10 V; VGS = -4.5 V; Tj = 25 °C - 15.5 - nC - 2.7 - nC - 2.2 - nC - 1890 - pF - 175 - pF - 112 - pF - 13 - ns Dynamic characteristics QG(tot) total gate charge QGS gate-source charge QGD gate-drain charge Ciss input capacitance Coss output capacitance Crss reverse transfer capacitance td(on) turn-on delay time VGS = 0 V; VDS = -10 V; f = 1 MHz; Tj = 25 °C VDS = -10 V; VGS = -5 V; RG(ext) = 6 Ω; Tj = 25 °C; ID = -1 A tr rise time - 21 - ns td(off) turn-off delay time - 95 - ns tf fall time - 33 - ns - -0.75 -1 V Source-drain diode VSD source-drain voltage http://www.twtysemi.com IS = -2.4 A; VGS = 0 V; Tj = 25 °C [email protected] 4 of 4