TYSEMI PMV32UP

Product specification
PMV32UP
20 V, 4 A P-channel Trench MOSFET
Rev. 1 — 11 March 2011
Product data sheet
1. Product profile
1.1 General description
P-channel enhancement mode Field-Effect Transistor (FET) in a small
SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench
MOSFET technology.
1.2 Features and benefits
 1.8 V drain-source on-state resistance
rated
 Very fast switching
 Trench MOSFET technology
1.3 Applications
 Relay driver
 High-side loadswitch
 High-speed line driver
 Switching circuits
1.4 Quick reference data
Table 1.
Quick reference data
Symbol
Parameter
Conditions
Min
Typ
Max Unit
VDS
drain-source
voltage
Tj = 25 °C
-
-
-20
V
VGS
gate-source
voltage
-8
-
8
V
ID
drain current
-
-
-4
A
-
32
36
mΩ
VGS = -4.5 V; Tamb = 25 °C
[1]
Static characteristics
RDSon
[1]
drain-source
on-state
resistance
VGS = -4.5 V; ID = -2.4 A;
Tj = 25 °C
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
drain 6 cm2.
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1 of 4
Product specification
PMV32UP
20 V, 4 A P-channel Trench MOSFET
2. Pinning information
Table 2.
Pinning information
Pin
Symbol Description
1
G
gate
2
S
source
3
D
drain
Simplified outline
Graphic symbol
D
3
G
1
2
SOT23 (TO-236AB)
S
017aaa094
3. Ordering information
Table 3.
Ordering information
Type number
PMV32UP
Package
Name
Description
Version
TO-236AB
plastic surface-mounted package; 3 leads
SOT23
4. Marking
Table 4.
Marking codes
Type number
Marking code[1]
PMV32UP
NF%
[1]
% = placeholder for manufacturing site code
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Product specification
PMV32UP
20 V, 4 A P-channel Trench MOSFET
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VDS
drain-source voltage
Tj = 25 °C
-
-20
V
VGS
gate-source voltage
drain current
ID
total power dissipation
Ptot
8
V
VGS = -4.5 V; Tamb = 25 °C
-
-4
A
VGS = -4.5 V; Tamb = 100 °C
[1]
-
-2.5
A
-
-16
A
[2]
-
510
mW
[1]
-
930
mW
Tamb = 25 °C; single pulse; tp ≤ 10 µs
peak drain current
IDM
-8
[1]
Tamb = 25 °C
-
4150
mW
Tj
junction temperature
Tsp = 25 °C
-55
150
°C
Tamb
ambient temperature
-55
150
°C
Tstg
storage temperature
-65
150
°C
-
-1
A
Source-drain diode
source current
IS
[1]
Tamb = 25 °C
[1]
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2.
[2]
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
6. Thermal characteristics
Table 6.
Symbol
Rth(j-a)
Rth(j-sp)
Thermal characteristics
Parameter
thermal resistance
from junction to
ambient
Conditions
in free air
Min
Typ
Max
Unit
[1]
-
207
245
K/W
[2]
-
117
135
K/W
-
25
30
K/W
thermal resistance
from junction to solder
point
[1]
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2]
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm2.
http://www.twtysemi.com
[email protected]
3 of 4
Product specification
PMV32UP
20 V, 4 A P-channel Trench MOSFET
7. Characteristics
Table 7.
Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
V(BR)DSS
drain-source
breakdown voltage
ID = -250 µA; VGS = 0 V; Tj = 25 °C
-20
-
-
V
VGSth
gate-source threshold
voltage
ID = -250 µA; VDS = VGS; Tj = 25 °C
-0.45
-0.7
-0.95
V
IDSS
drain leakage current
VDS = -20 V; VGS = 0 V; Tj = 25 °C
-
-
-1
µA
VDS = -20 V; VGS = 0 V; Tj = 150 °C
-
-
-10
µA
IGSS
gate leakage current
VGS = -8 V; VDS = 0 V; Tj = 25 °C
-
-
-100
nA
RDSon
drain-source on-state
resistance
VGS = -4.5 V; ID = -2.4 A; Tj = 25 °C
-
32
36
mΩ
VGS = -4.5 V; ID = -2.4 A; Tj = 150 °C
-
46
53
mΩ
VGS = -2.5 V; ID = -2.0 A; Tj = 25 °C
-
40
46
mΩ
gfs
forward
transconductance
VGS = -1.8 V; ID = -1.8 A; Tj = 25 °C
-
55
73
mΩ
VDS = -5 V; ID = -2.4 A; Tj = 25 °C
-
13
-
S
ID = -1 A; VDS = -10 V; VGS = -4.5 V;
Tj = 25 °C
-
15.5
-
nC
-
2.7
-
nC
-
2.2
-
nC
-
1890
-
pF
-
175
-
pF
-
112
-
pF
-
13
-
ns
Dynamic characteristics
QG(tot)
total gate charge
QGS
gate-source charge
QGD
gate-drain charge
Ciss
input capacitance
Coss
output capacitance
Crss
reverse transfer
capacitance
td(on)
turn-on delay time
VGS = 0 V; VDS = -10 V; f = 1 MHz;
Tj = 25 °C
VDS = -10 V; VGS = -5 V; RG(ext) = 6 Ω;
Tj = 25 °C; ID = -1 A
tr
rise time
-
21
-
ns
td(off)
turn-off delay time
-
95
-
ns
tf
fall time
-
33
-
ns
-
-0.75
-1
V
Source-drain diode
VSD
source-drain voltage
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IS = -2.4 A; VGS = 0 V; Tj = 25 °C
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