SO T2 3 PMV33UPE 20 V, single P-channel Trench MOSFET Rev. 1 — 12 June 2012 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Low threshold voltage Trench MOSFET technology Very fast switching 2 kV ESD protected 1.3 Applications Relay driver High-side loadswitch High-speed line driver Switching circuits 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage Tj = 25 °C - - -20 V VGS gate-source voltage -8 - 8 V - - -5.3 A - 30 36 mΩ drain current ID VGS = -4.5 V; Tamb = 25 °C; t ≤ 5 s [1] Static characteristics RDSon [1] drain-source on-state resistance VGS = -4.5 V; ID = -3 A; Tj = 25 °C Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2. PMV33UPE NXP Semiconductors 20 V, single P-channel Trench MOSFET 2. Pinning information Table 2. Pinning information Pin Symbol Description 1 G gate 2 S source 3 D drain Simplified outline Graphic symbol D 3 1 2 G SOT23 (TO-236AB) S 017aaa259 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PMV33UPE TO-236AB plastic surface-mounted package; 3 leads SOT23 4. Marking Table 4. Marking codes Type number Marking code[1] PMV33UPE EJ% [1] % = placeholder for manufacturing site code PMV33UPE Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 12 June 2012 © NXP B.V. 2012. All rights reserved. 2 of 15 PMV33UPE NXP Semiconductors 20 V, single P-channel Trench MOSFET 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage Tj = 25 °C - -20 V VGS gate-source voltage drain current ID total power dissipation Ptot 8 V VGS = -4.5 V; Tamb = 25 °C; t ≤ 5 s - -5.3 A VGS = -4.5 V; Tamb = 25 °C [1] - -4.4 A VGS = -4.5 V; Tamb = 100 °C [1] - -2.8 A Tamb = 25 °C; single pulse; tp ≤ 10 µs peak drain current IDM -8 [1] Tamb = 25 °C - -17.6 A [2] - 490 mW [1] - 980 mW - 4150 mW -55 150 °C Tsp = 25 °C Tj junction temperature Tamb ambient temperature -55 150 °C Tstg storage temperature -65 150 °C Source-drain diode source current IS Tamb = 25 °C [1] - -1.2 A HBM [3] - 2000 V ESD maximum rating electrostatic discharge voltage VESD [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2. [2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. [3] Measured between all pins. 017aaa123 120 Pder (%) Ider (%) 80 80 40 40 0 −75 Fig 1. 017aaa124 120 −25 25 75 125 Tj (°C) Normalized total power dissipation as a function of junction temperature PMV33UPE Product data sheet 0 −75 175 Fig 2. −25 25 75 125 175 Tj (°C) Normalized continuous drain current as a function of junction temperature All information provided in this document is subject to legal disclaimers. Rev. 1 — 12 June 2012 © NXP B.V. 2012. All rights reserved. 3 of 15 PMV33UPE NXP Semiconductors 20 V, single P-channel Trench MOSFET 017aaa601 -102 Limit RDSon = VDS/ID ID (A) -10 tp = 1 ms tp = 10 ms -1 tp = 100 ms DC; Tsp = 25 °C -10-1 DC; Tamb = 25 °C; drain mounting pad 6 cm2 -10-2 0 -1 -102 -10 VDS (V) IDM = single pulse Fig 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-source voltage 6. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Rth(j-a) thermal resistance from junction to ambient in free air Rth(j-sp) Min Typ Max Unit [1] - 222 255 K/W [2] - 111 128 K/W [3] - 74 85 K/W - 25 30 K/W thermal resistance from junction to solder point [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm2. [3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm2, t ≤ 5 s. PMV33UPE Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 12 June 2012 © NXP B.V. 2012. All rights reserved. 4 of 15 PMV33UPE NXP Semiconductors 20 V, single P-channel Trench MOSFET 017aaa602 103 Zth(j-a) (K/W) duty cycle = 1 0.75 0.5 102 0.33 0.25 0.2 0.1 10 0.05 0.02 0.01 0 1 10-3 10-2 10-1 1 10 102 103 tp (s) FR4 PCB, standard footprint Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 017aaa603 103 Zth(j-a) (K/W) duty cycle = 1 102 0.75 0.5 0.33 0.25 0.2 0.1 10 0.05 0.02 0 1 10-3 0.01 10-2 10-1 1 10 102 103 tp (s) FR4 PCB, mounting pad for drain 6 cm2 Fig 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PMV33UPE Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 12 June 2012 © NXP B.V. 2012. All rights reserved. 5 of 15 PMV33UPE NXP Semiconductors 20 V, single P-channel Trench MOSFET 7. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit Static characteristics V(BR)DSS drain-source breakdown voltage ID = -250 µA; VGS = 0 V; Tj = 25 °C -20 - - V VGSth gate-source threshold voltage ID = -250 µA; VDS = VGS; Tj = 25 °C -0.45 -0.7 -0.95 V IDSS drain leakage current VDS = -20 V; VGS = 0 V; Tj = 25 °C - - -1 µA VDS = -20 V; VGS = 0 V; Tj = 150 °C - - -15 µA IGSS gate leakage current VGS = -8 V; VDS = 0 V; Tj = 25 °C - - -10 µA VGS = 8 V; VDS = 0 V; Tj = 25 °C - - -10 µA VGS = -4.5 V; ID = -3 A; Tj = 25 °C - 30 36 mΩ RDSon gfs drain-source on-state resistance forward transconductance VGS = -4.5 V; ID = -3 A; Tj = 150 °C - 43 51 mΩ VGS = -2.5 V; ID = -3 A; Tj = 25 °C - 38 47 mΩ VGS = -1.8 V; ID = -3 A; Tj = 25 °C - 51 65 mΩ VDS = -10 V; ID = -4.4 A; Tj = 25 °C - 16 - S VDS = -10 V; ID = -4.4 A; VGS = -4.5 V; Tj = 25 °C - 14.7 22.1 nC - 2.6 - nC - 2.5 - nC VDS = -10 V; f = 1 MHz; VGS = 0 V; Tj = 25 °C - 1820 - pF - 208 - pF - 146 - pF - 11 - ns - 30 - ns Dynamic characteristics QG(tot) total gate charge QGS gate-source charge QGD gate-drain charge Ciss input capacitance Coss output capacitance Crss reverse transfer capacitance td(on) turn-on delay time tr rise time td(off) turn-off delay time - 83 - ns tf fall time - 39 - ns - -0.7 -1.2 V VDS = -10 V; ID = -4.4 A; VGS = -4.5 V; RG(ext) = 6 Ω; Tj = 25 °C Source-drain diode VSD source-drain voltage PMV33UPE Product data sheet IS = -1.2 A; VGS = 0 V; Tj = 25 °C All information provided in this document is subject to legal disclaimers. Rev. 1 — 12 June 2012 © NXP B.V. 2012. All rights reserved. 6 of 15 PMV33UPE NXP Semiconductors 20 V, single P-channel Trench MOSFET 017aaa604 -20 -4.5 V ID (A) -2.5 V -2.2 V 017aaa143 –10–3 VGS = -2 V ID (A) -3 V -15 –10–4 -1.8 V (1) (2) (3) -10 -1.6 V –10–5 -5 -1.4 V -1.2 V 0 0 -1 -2 -3 -4 –10–6 –0.2 –0.4 –0.6 –0.8 VDS (V) –1.0 VGS (V) Tj = 25 °C Tj = 25 °C; VDS = -3 V (1) minimum values (2) typical values (3) maximum values Fig 6. Output characteristics: drain current as a function of drain-source voltage; typical values 120 017aaa605 -1.4 V -1.6 V -1.8 V Fig 7. Sub-threshold drain current as a function of gate-source voltage 017aaa606 120 -2.0 V RDSon (mΩ) RDSon (mΩ) 80 80 Tj = 150 °C -2.5 V 40 40 -3.0 V VGS = -4.5 V Tj = 25 °C 0 0 0 -5 -10 -15 -20 0 ID (A) Product data sheet -6 ID = -4.4 A Drain-source on-state resistance as a function of drain current; typical values PMV33UPE -4 VGS (V) Tj = 25 °C Fig 8. -2 Fig 9. Drain-source on-state resistance as a function of gate-source voltage; typical values All information provided in this document is subject to legal disclaimers. Rev. 1 — 12 June 2012 © NXP B.V. 2012. All rights reserved. 7 of 15 PMV33UPE NXP Semiconductors 20 V, single P-channel Trench MOSFET 017aaa607 -18 017aaa608 1.50 a ID (A) 1.25 -12 1.00 -6 0.75 Tj = 150 °C Tj = 25 °C 0 0 -0.5 -1.0 -1.5 -2.0 -2.5 VGS (V) 0.50 -60 0 60 120 180 Tj (°C) VDS > ID × RDSon Fig 10. Transfer characteristics: drain current as a function of gate-source voltage; typical values 017aaa609 -1.2 Fig 11. Normalized drain-source on-state resistance as a function of junction temperature; typical values 017aaa610 104 C (pF) VGS(th) (V) Ciss max 103 -0.8 typ Coss -0.4 min 0 -60 Crss 102 10 0 60 120 180 0 -1 Tj (°C) VDS (V) ID = -0.25 mA; VDS = VGS f = 1 MHz; VGS = 0 V Fig 12. Gate-source threshold voltage as a function of junction temperature PMV33UPE Product data sheet -102 -10 Fig 13. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values All information provided in this document is subject to legal disclaimers. Rev. 1 — 12 June 2012 © NXP B.V. 2012. All rights reserved. 8 of 15 PMV33UPE NXP Semiconductors 20 V, single P-channel Trench MOSFET 017aaa611 -5 VDS VGS (V) ID -4 VGS(pl) -3 VGS(th) VGS -2 QGS1 QGS2 QGS -1 QGD QG(tot) 017aaa137 0 0 5 10 15 QG (nC) ID = −4.4 A; VDS = −10 V; Tamb = 25 °C Fig 14. Gate-source voltage as a function of gate charge; typical values Fig 15. Gate charge waveform definitions 017aaa612 -5 IS (A) -4 -3 -2 Tj = 150 °C -1 Tj = 25 °C 0 0 -0.2 -0.4 -0.6 -0.8 -1.0 VSD (V) VGS = 0 V Fig 16. Source current as a function of source-drain voltage; typical values PMV33UPE Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 12 June 2012 © NXP B.V. 2012. All rights reserved. 9 of 15 PMV33UPE NXP Semiconductors 20 V, single P-channel Trench MOSFET 8. Test information P t2 duty cycle δ = t1 t2 t1 t 006aaa812 Fig 17. Duty cycle definition 9. Package outline 3.0 2.8 1.1 0.9 3 0.45 0.15 2.5 1.4 2.1 1.2 1 2 1.9 0.48 0.38 Dimensions in mm 0.15 0.09 04-11-04 Fig 18. Package outline SOT23 (TO-236AB) PMV33UPE Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 12 June 2012 © NXP B.V. 2012. All rights reserved. 10 of 15 PMV33UPE NXP Semiconductors 20 V, single P-channel Trench MOSFET 10. Soldering 3.3 2.9 1.9 solder lands solder resist 3 2 1.7 solder paste occupied area 0.6 (3×) 0.7 (3×) Dimensions in mm 0.5 (3×) 0.6 (3×) 1 sot023_fr Fig 19. Reflow soldering footprint for SOT23 (TO-236AB) 2.2 1.2 (2×) 1.4 (2×) solder lands 4.6 solder resist 2.6 occupied area Dimensions in mm 1.4 preferred transport direction during soldering 2.8 4.5 sot023_fw Fig 20. Wave soldering footprint for SOT23 (TO-236AB) PMV33UPE Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 12 June 2012 © NXP B.V. 2012. All rights reserved. 11 of 15 PMV33UPE NXP Semiconductors 20 V, single P-channel Trench MOSFET 11. Revision history Table 8. Revision history Document ID Release date Data sheet status Change notice Supersedes PMV33UPE v.1 20120612 Product data sheet - - PMV33UPE Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 12 June 2012 © NXP B.V. 2012. All rights reserved. 12 of 15 PMV33UPE NXP Semiconductors 20 V, single P-channel Trench MOSFET 12. Legal information 12.1 Data sheet status Document status[1] [2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term 'short data sheet' is explained in section "Definitions". [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URLhttp://www.nxp.com. 12.2 Definitions Preview — The document is a preview version only. The document is still subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. 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NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). NXP does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. All information provided in this document is subject to legal disclaimers. Rev. 1 — 12 June 2012 © NXP B.V. 2012. All rights reserved. 13 of 15 PMV33UPE NXP Semiconductors 20 V, single P-channel Trench MOSFET Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published athttp://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. 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Adelante,Bitport,Bitsound,CoolFlux,CoReUse,DESFire,EZ-HV,FabKey,G reenChip,HiPerSmart,HITAG,I²C-bus logo,ICODE,I-CODE,ITEC,Labelution,MIFARE,MIFARE Plus,MIFARE Ultralight,MoReUse,QLPAK,Silicon Tuner,SiliconMAX,SmartXA,STARplug,TOPFET,TrenchMOS,TriMedia andUCODE — are trademarks of NXP B.V. In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without NXP Semiconductors’ warranty of the HD Radio andHD Radio logo — are trademarks of iBiquity Digital Corporation. 13. Contact information For more information, please visit:http://www.nxp.com For sales office addresses, please send an email to:[email protected] PMV33UPE Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 12 June 2012 © NXP B.V. 2012. All rights reserved. 14 of 15 PMV33UPE NXP Semiconductors 20 V, single P-channel Trench MOSFET 14. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 12 12.1 12.2 12.3 12.4 13 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1 General description . . . . . . . . . . . . . . . . . . . . . .1 Features and benefits . . . . . . . . . . . . . . . . . . . . .1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 Quick reference data . . . . . . . . . . . . . . . . . . . . .1 Pinning information . . . . . . . . . . . . . . . . . . . . . . .2 Ordering information . . . . . . . . . . . . . . . . . . . . . .2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .3 Thermal characteristics . . . . . . . . . . . . . . . . . . .4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . .6 Test information . . . . . . . . . . . . . . . . . . . . . . . . .10 Package outline . . . . . . . . . . . . . . . . . . . . . . . . .10 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Revision history . . . . . . . . . . . . . . . . . . . . . . . . .12 Legal information. . . . . . . . . . . . . . . . . . . . . . . .13 Data sheet status . . . . . . . . . . . . . . . . . . . . . . .13 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Contact information. . . . . . . . . . . . . . . . . . . . . .14 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2012. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 12 June 2012 Document identifier: PMV33UPE