Product specification PMV56XN µTrenchMOS™ extremely low level FET Rev. 02 — 24 June 2004 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. 1.2 Features ■ TrenchMOS™ technology ■ Low threshold voltage ■ Very fast switching ■ Subminiature surface mount package. 1.3 Applications ■ Battery management ■ High-speed switch ■ Low power DC-to-DC converter. 1.4 Quick reference data ■ VDS ≤ 20 V ■ Ptot ≤ 1.92 W ■ ID ≤ 3.76 A ■ RDSon ≤ 85 mΩ 2. Pinning information Table 1: Pinning - SOT23, simplified outline and symbol Pin Description 1 gate (g) 2 source (s) 3 drain (d) Simplified outline Symbol 3 d g 1 2 Top view MSB003 mbb076 s SOT23 http://www.twtysemi.com [email protected] 1 of 3 Product specification PMV56XN µTrenchMOS™ extremely low level FET 3. Ordering information Table 2: Ordering information Type number PMV56XN Package Name Description Version SOT23 Plastic surface mounted package; 3 leads SOT23 4. Limiting values Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions VDS drain-source voltage (DC) 25 °C ≤ Tj ≤ 150 °C VGS gate-source voltage (DC) ID drain current (DC) Min Max Unit - 20 V - ±8 V Tsp = 25 °C; VGS = 4.5 V; Figure 2 and 3 - 3.76 A Tsp = 70 °C; VGS = 4.5 V; Figure 2 - 3 A IDM peak drain current Tsp = 25 °C; pulsed; tp ≤ 10 µs; Figure 3 - 15 A Ptot total power dissipation Tsp = 25 °C; Figure 1 - 1.92 W Tstg storage temperature −65 +150 °C Tj junction temperature −65 +150 °C - 1.6 A Source-drain diode IS source (diode forward) current (DC) Tsp = 25 °C http://www.twtysemi.com [email protected] 2 of 3 Product specification PMV56XN µTrenchMOS™ extremely low level FET 5. Characteristics Table 4: Characteristics Tj = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit V(BR)DSS drain-source breakdown voltage ID = 10 µA; VGS = 0 V 20 - - V VGS(th) gate-source threshold voltage ID = 1 mA; VDS = VGS; Figure 9 0.65 - - V IDSS drain-source leakage current VDS = 20 V; VGS = 0 V Tj = 25 °C - 0.01 1.0 µA Tj = 55 °C - - 10 µA Static characteristics IGSS gate-source leakage current VGS = ±8 V; VDS = 0 V - 10 100 nA RDSon drain-source on-state resistance VGS = 4.5 V; ID = 3.6 A; Figure 7 and 8 - 56 85 mΩ VGS = 2.5 V; ID = 3.1 A; Figure 7 and 8 - 77 115 mΩ VDD = 10 V; VGS = 4.5 V; ID = 3.6 A; Figure 13 Dynamic characteristics Qg(tot) total gate charge - 5.4 - nC Qgs gate-source charge - 0.65 - nC Qgd gate-drain (Miller) charge - 1.6 - nC Ciss input capacitance - 230 - pF VGS = 0 V; VDS = 10 V; f = 1 MHz; Figure 11 Coss output capacitance - 125 - pF Crss reverse transfer capacitance - 80 - pF td(on) turn-on delay time - 12 - ns tr rise time - 23 - ns td(off) turn-off delay time - 50 - ns tf fall time - 34 - ns - 0.8 1.2 V VDD = 10 V; RL = 5.5 Ω; VGS = 4.5 V; RG = 6 Ω Source-drain diode VSD source-drain (diode forward) voltage IS = 1.6 A; VGS = 0 V; Figure 12 http://www.twtysemi.com [email protected] 3 of 3