TYSEMI PMV56XN

Product specification
PMV56XN
µTrenchMOS™ extremely low level FET
Rev. 02 — 24 June 2004
Product data
1. Product profile
1.1 Description
N-channel enhancement mode field-effect transistor in a plastic package using
TrenchMOS™ technology.
1.2 Features
■ TrenchMOS™ technology
■ Low threshold voltage
■ Very fast switching
■ Subminiature surface mount package.
1.3 Applications
■ Battery management
■ High-speed switch
■ Low power DC-to-DC converter.
1.4 Quick reference data
■ VDS ≤ 20 V
■ Ptot ≤ 1.92 W
■ ID ≤ 3.76 A
■ RDSon ≤ 85 mΩ
2. Pinning information
Table 1:
Pinning - SOT23, simplified outline and symbol
Pin
Description
1
gate (g)
2
source (s)
3
drain (d)
Simplified outline
Symbol
3
d
g
1
2
Top view
MSB003
mbb076
s
SOT23
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Product specification
PMV56XN
µTrenchMOS™ extremely low level FET
3. Ordering information
Table 2:
Ordering information
Type number
PMV56XN
Package
Name
Description
Version
SOT23
Plastic surface mounted package; 3 leads
SOT23
4. Limiting values
Table 3:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
VDS
drain-source voltage (DC)
25 °C ≤ Tj ≤ 150 °C
VGS
gate-source voltage (DC)
ID
drain current (DC)
Min
Max
Unit
-
20
V
-
±8
V
Tsp = 25 °C; VGS = 4.5 V; Figure 2 and 3
-
3.76
A
Tsp = 70 °C; VGS = 4.5 V; Figure 2
-
3
A
IDM
peak drain current
Tsp = 25 °C; pulsed; tp ≤ 10 µs; Figure 3
-
15
A
Ptot
total power dissipation
Tsp = 25 °C; Figure 1
-
1.92
W
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−65
+150
°C
-
1.6
A
Source-drain diode
IS
source (diode forward) current (DC) Tsp = 25 °C
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Product specification
PMV56XN
µTrenchMOS™ extremely low level FET
5. Characteristics
Table 4:
Characteristics
Tj = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Min
Typ
Max
Unit
V(BR)DSS drain-source breakdown voltage
ID = 10 µA; VGS = 0 V
20
-
-
V
VGS(th)
gate-source threshold voltage
ID = 1 mA; VDS = VGS; Figure 9
0.65
-
-
V
IDSS
drain-source leakage current
VDS = 20 V; VGS = 0 V
Tj = 25 °C
-
0.01
1.0
µA
Tj = 55 °C
-
-
10
µA
Static characteristics
IGSS
gate-source leakage current
VGS = ±8 V; VDS = 0 V
-
10
100
nA
RDSon
drain-source on-state resistance
VGS = 4.5 V; ID = 3.6 A; Figure 7 and 8
-
56
85
mΩ
VGS = 2.5 V; ID = 3.1 A; Figure 7 and 8
-
77
115
mΩ
VDD = 10 V; VGS = 4.5 V; ID = 3.6 A; Figure 13
Dynamic characteristics
Qg(tot)
total gate charge
-
5.4
-
nC
Qgs
gate-source charge
-
0.65
-
nC
Qgd
gate-drain (Miller) charge
-
1.6
-
nC
Ciss
input capacitance
-
230
-
pF
VGS = 0 V; VDS = 10 V; f = 1 MHz; Figure 11
Coss
output capacitance
-
125
-
pF
Crss
reverse transfer capacitance
-
80
-
pF
td(on)
turn-on delay time
-
12
-
ns
tr
rise time
-
23
-
ns
td(off)
turn-off delay time
-
50
-
ns
tf
fall time
-
34
-
ns
-
0.8
1.2
V
VDD = 10 V; RL = 5.5 Ω; VGS = 4.5 V; RG = 6 Ω
Source-drain diode
VSD
source-drain (diode forward) voltage IS = 1.6 A; VGS = 0 V; Figure 12
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