SMD Type Product specification NTR4003N Small Signal MOSFET 30 V, 0.56 A, Single N−Channel, SOT−23 Features • Low Gate Voltage Threshold (VGS(TH)) to Facilitate Drive Circuit • • • • • Design Low Gate Charge for Fast Switching ESD Protected Gate SOT−23 Package Provides Excellent Thermal Performance Minimum Breakdown Voltage Rating of 30 V These are Pb−Free Devices RDS(on) TYP V(BR)DSS ID MAX 1.0 W @ 4.0 V 30 V 0.56 A 1.5 W @ 2.5 V Applications • Notebooks: N−Channel ♦ • Level Shifters ♦ Logic Switches ♦ Low Side Load Switches Portable Applications 3 1 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS 30 V Gate−to−Source Voltage VGS ±20 V ID 0.5 A Continuous Drain Current (Note 1) Steady State Power Dissipation (Note 1) TA = 25°C TA = 85°C Steady State Continuous Drain Current (Note 1) t < 10 s TA = 25°C MARKING DIAGRAM/ PIN ASSIGNMENT 0.37 PD 0.69 ID 0.56 TA = 85°C Power Dissipation (Note 1) 3 Drain A 0.83 W tp = 10 ms IDM 1.7 A TJ, Tstg −55 to 150 °C Source Current IS 1.0 A Lead Temperature for Soldering Purposes (1/8” from case for 10 s) TL 260 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Symbol Max Unit Junction−to−Ambient − Steady State (Note 1) RqJA 180 °C/W Junction−to−Ambient − t < 10 s (Note 1) RqJA 150 Junction−to−Ambient − Steady State (Note 2) RqJA 300 1. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces). 2. Surface−mounted on FR4 board using the minimum recommended pad size. http://www.twtysemi.com SOT−23 CASE 318 STYLE 21 [email protected] TR8 M G G 1 Gate 2 Source TR8 = Specific Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and overbar may vary depending upon manufacturing location. ORDERING INFORMATION Device THERMAL RESISTANCE RATINGS Parameter 1 2 0.40 PD Operating Junction and Storage Temperature 3 W t<5s Pulsed Drain Current 2 Package Shipping† NTR4003NT1G SOT−23 (Pb−Free) 3000/Tape & Reel NTR4003NT3G SOT−23 (Pb−Free) 10,000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. 4008-318-123 1 of 2 SMD Type Product specification NTR4003N ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Symbol Test Condition Min Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 100 mA 30 Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/TJ Parameter Typ Max Units OFF CHARACTERISTICS V 40 Zero Gate Voltage Drain Current IDSS VGS = 0 V, VDS = 30 V TJ = 25°C Gate−to−Source Leakage Current IGSS VDS = 0 V, VGS = ±10 V VGS(TH) VGS = VDS, ID = 250 mA mV/°C 1.0 mA ±1.0 mA 1.4 V ON CHARACTERISTICS (Note 3) Gate Threshold Voltage Negative Threshold Temperature Coefficient VGS(TH)/TJ Drain−to−Source On Resistance RDS(on) Forward Transconductance gFS 0.8 3.4 mV/°C VGS = 4.0 V, ID = 10 mA 1.0 1.5 VGS = 2.5 V, ID = 10 mA 1.5 2.0 VDS = 3.0 V, ID = 10 mA 0.33 W S CHARGES AND CAPACITANCES Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance 21 VGS = 0 V, f = 1.0 MHz, VDS = 5.0 V 19.7 Crss 8.1 Total Gate Charge QG(TOT) 1.15 Threshold Gate Charge QG(TH) VGS = 5.0 V, VDS = 24 V, ID = 0.1 A pF 0.15 Gate−to−Source Gate Charge QGS Gate−to−Drain Charge QGD 0.23 td(on) 16.7 nC 0.32 SWITCHING CHARACTERISTICS (Note 4) Turn−On Delay Time Rise Time tr Turn−Off Delay Time td(off) Fall Time VGS = 4.5 V, VDD = 5.0 V, ID = 0.1 A, RG = 50 W tf 47.9 ns 65.1 64.2 SOURCE−DRAIN DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time VSD tRR VGS = 0 V, IS = 10 mA TJ = 25°C 0.65 TJ = 125°C 0.45 VGS = 0 V, dIS/dt = 8A/ms, IS = 10 mA 14 0.7 V ns 3. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 4. Switching characteristics are independent of operating junction temperatures. http://www.twtysemi.com [email protected] 4008-318-123 2 of 2