Product specification NTR4101P, NTRV4101P Trench Power MOSFET V(BR)DSS −20 V, Single P−Channel, SOT−23 Features • • • • • RDS(ON) TYP ID MAX 70 mW @ −4.5 V −20 V −3.2 A 90 mW @ −2.5 V Leading −20 V Trench for Low RDS(on) −1.8 V Rated for Low Voltage Gate Drive SOT−23 Surface Mount for Small Footprint NTRV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant 112 mW @ −1.8 V P−Channel MOSFET S G Applications • Load/Power Management for Portables • Load/Power Management for Computing • Charging Circuits and Battery Protection D MARKING DIAGRAM & PIN ASSIGNMENT MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current (Note 1) Power Dissipation (Note 1) Symbol Value Unit VDSS −20 V VGS ±8.0 V ID −2.4 A Steady State TA = 25°C TA = 85°C −1.7 t ≤ 10 s TA = 25°C −3.2 Steady State TA = 25°C PD t ≤ 10 s Continuous Drain Current (Note 2) Steady State Power Dissipation (Note 2) Pulsed Drain Current ESD Capability (Note 3) 0.73 W 1.25 TA = 25°C ID TA = 85°C TA = 25°C −1.8 A −1.3 PD 0.42 W tp = 10 ms IDM −18 A C = 100 pF, RS = 1500 W ESD 225 V TJ, TSTG −55 to 150 °C IS −2.4 A EAS 16 mJ TL 260 °C 3 Drain 3 TR4 MG G 1 2 SOT−23 CASE 318 STYLE 21 1 Gate 2 Source TR4 = Device Code M = Date Code G = Pb−Free Package (*Note: Microdot may be in either location) ORDERING INFORMATION Operating Junction and Storage Temperature Source Current (Body Diode) Single Pulse Drain−to−Source Avalanche Energy (VGS = −8 V, IL = −1.8 Apk, L = 10 mH, RG = 25 W) Lead Temperature for Soldering Purposes (1/8” from case for 10 s) Device Package Shipping† NTR4101PT1G SOT−23 (Pb−Free) 3000 / Tape & Reel SOT−23 (Pb−Free) 3000 / Tape & Reel NTR4101PT1H NTRV4101PT1G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. http://www.twtysemi.com [email protected] 1 of 2 Product specification NTR4101P, NTRV4101P THERMAL RESISTANCE RATINGS Parameter Symbol Max Unit °C/W Junction−to−Ambient − Steady State (Note 1) RqJA 170 Junction−to−Ambient − t < 10 s (Note 1) RqJA 100 Junction−to−Ambient − Steady State (Note 2) RqJA 300 1. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces) 2. Surface−mounted on FR4 board using the minimum recommended pad size. 3. ESD Rating Information: HBM Class 0 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min V(BR)DSS −20 Typ Max Unit OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage (Note 4) (VGS = 0 V, ID = −250 mA) V Zero Gate Voltage Drain Current (Note 4) (VGS = 0 V, VDS = −16 V) IDSS −1.0 mA Gate−to−Source Leakage Current (VGS = ±8.0 V, VDS = 0 V) IGSS ±100 nA −0.72 −1.2 V 70 90 112 85 120 210 TY CHARACTERISTICS Gate Threshold Voltage (Note 4) (VGS = VDS, ID = −250 mA) VGS(th) Drain−to−Source On−Resistance (VGS = −4.5 V, ID = −1.6 A) (VGS = −2.5 V, ID = −1.3 A) (VGS = −1.8 V, ID = −0.9 A) RDS(on) Forward Transconductance (VDS = −5.0 V, ID = −2.3 A) −0.4 mW gFS 7.5 S Ciss 675 pF Coss 100 Crss 75 QG(tot) 7.5 CHARGES, CAPACITANCES & GATE RESISTANCE Input Capacitance Output Capacitance (VGS = 0 V, f = 1 MHz, VDS = −10 V) Reverse Transfer Capacitance Total Gate Charge (VGS = −4.5 V, VDS = −10 V, ID = −1.6 A) 8.5 nC Gate−to−Source Gate Charge (VDS = −10 V, ID = −1.6 A) QGS 1.2 nC Gate−to−Drain “Miller” Charge (VDS = −10 V, ID = −1.6 A) QGD 2.2 nC RG 6.5 W td(on) 7.5 ns tr 12.6 td(off) 30.2 tf 21.0 VSD −0.82 −1.2 V trr 12.8 15 ns ta 9.9 ns tb 3.0 ns Qrr 1008 nC Gate Resistance SWITCHING CHARACTERISTICS (Note 5) Turn−On Delay Time Rise Time Turn−Off Delay Time (VGS = −4.5 V, VDS = −10 V, ID = −1.6 A, RG = 6.0 W) Fall Time DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage (VGS = 0 V, IS = −2.4 A) Reverse Recovery Time Charge Time Discharge Time (VGS = 0 V, dISD/dt = 100 A/ms, IS = −1.6 A) Reverse Recovery Charge 4. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%. 5. Switching characteristics are independent of operating junction temperature. http://www.twtysemi.com [email protected] 2 of 2