UD04N65 機密 第 1 頁 2011-03-14 -1- N-Ch 650V Fast Switching MOSFETs General Description Product Summery The UD04N65 is the highest performance N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . The UD04N65 meet the RoHS and Green Product requirement , 100% EAS guaranteed with full function reliability approved. BVDSS RDS(ON) ID 650V 2.6 Ω 4A Applications z High efficient switched mode power supplies z Electronic lamp ballast z LCD TV/ Monitor Features z Adapter TO252 Pin Configuration z Super Low Gate Charge z Excellent CdV/dt effect decline z 100% EAS Guaranteed z Green Device Available Absolute Maximum Ratings Symbol Parameter VDS VGS ID@TC=25℃ ID@TC=100℃ IDM Rating Units Drain-Source Voltage 650 V Gate-Source Voltage ±30 V 1 4 A 1 2.6 A 8 A Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 2 3 EAS Single Pulse Avalanche Energy 26.2 mJ IAS Avalanche Current 7 A 4 PD@TC=25℃ Total Power Dissipation 62.5 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol RθJA RθJC Parameter Typ. Thermal Resistance Junction-ambient (Steady State) 1 Thermal Resistance Junction-Case 1 1 Max. Unit --- 62 ℃/W --- 2 ℃/W UD04N65 機密 第 2 頁 2011-03-14 -2- N-Ch 650V Fast Switching MOSFETs Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Conditions Drain-Source Breakdown Voltage Min. Typ. Max. Unit 650 --- --- V Reference to 25℃ , ID=1mA --- 0.69 --- V/℃ VGS=10V , ID=2A --- 2.1 2.6 Ω 2 --- 5 V VGS=0V , ID=250uA △BVDSS/△TJ BVDSS Temperature Coefficient 2 RDS(ON) Static Drain-Source On-Resistance VGS(th) Gate Threshold Voltage VGS=VDS , ID =250uA △VGS(th) VGS(th) Temperature Coefficient --- -8.2 --- mV/℃ IDSS Drain-Source Leakage Current VDS=520V , VGS=0V , TJ=25℃ --- --- 2 uA IGSS Gate-Source Leakage Current VGS=±30V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=15V , ID=2A --- 3 --- S Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 3.4 6.8 Ω Qg Total Gate Charge (10V) --- 18 --- Qgs Gate-Source Charge --- 4.9 --- Qgd Gate-Drain Charge --- 6.1 --- Td(on) VDS=520V , VGS=10V , ID=1A --- 11.2 --- Rise Time VDD=300V , VGS=10V , RG=10Ω, --- 18.8 --- Turn-Off Delay Time ID=1A --- 29.2 --- Fall Time --- 29.2 --- Ciss Input Capacitance --- 775 --- Coss Output Capacitance --- 56 --- Crss Reverse Transfer Capacitance --- 3.8 --- Min. Typ. Max. Unit 8.6 --- --- mJ Min. Typ. Max. Unit --- --- 4 A --- --- 8 A --- --- 1 V --- 195 --- nS --- 580 --- nC Tr Td(off) Tf Turn-On Delay Time nC VDS=25V , VGS=0V , F=1MHz ns pF Guaranteed Avalanche Characteristics Symbol EAS Parameter Conditions 5 Single Pulse Avalanche Energy VDD=50V , L=1mH , IAS=4A Diode Characteristics Symbol Parameter Conditions 1,6 IS Continuous Source Current ISM Pulsed Source Current 2,6 2 VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VG=VD=0V , Force Current VGS=0V , IS=1A , TJ=25℃ IF=1A , dI/dt=100A/µs , TJ=25℃ Note : 2 1.The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The EAS data shows Max. rating . The test condition is VDD=50V,VGS=10V,L=1mH,IAS=7A 4.The power dissipation is limited by 150℃ junction temperature 5.The Min. value is 100% EAS tested guarantee. 6.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. 2 UD04N65 機密 第 3 頁 2011-03-14 -3- N-Ch 650V Fast Switching MOSFETs Typical Characteristics 5.5 ID=2A RDSON (Ω) 4.5 3.5 2.5 1.5 4 Fig.1 Typical Output Characteristics 6 VGS (V) 8 10 Fig.2 On-Resistance vs. G-S Voltage 3 IS Source Current(A) 2.5 2 1.5 TJ=150℃ TJ=25℃ 1 0.5 0 0.00 0.25 0.50 0.75 1.00 VSD , Source-to-Drain Voltage (V) Fig.3 Forward Characteristics of Reverse Fig.4 Gate-Charge Characteristics 2.8 Normalized On Resistance 1.8 2.2 Normalized VGS(th) (V) 1.4 1.6 1 0.6 1.0 0.2 0.4 -50 0 50 100 150 -50 TJ ,Junction Temperature (℃ ) Fig.5 Normalized VGS(th) vs. TJ 0 50 100 TJ , Junction Temperature (℃) Fig.6 Normalized RDSON vs. TJ 3 150 UD04N65 機密 第 4 頁 2011-03-14 -4- N-Ch 650V Fast Switching MOSFETs 10000 10.00 10us F=1.0MHz 1.00 100 ID (A) Capacitance (pF) 100us Ciss 1000 Coss 10ms 100ms DC 0.10 10 Crss TC=25℃ Single Pulse 0.01 1 1 5 9 13 17 21 0.1 25 1 10 100 1000 10000 VDS (V) VDS , Drain to Source Voltage (V) Fig.7 Capacitance Fig.8 Safe Operating Area Normalized Thermal Response (RθJC) 1 DUTY=0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 P DM T ON SINGLE T D = TON/T TJpeak = TC+P DMXRθJC 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 t , Pulse Width (s) Fig.9 Normalized Maximum Transient Thermal Impedance Fig.10 Switching Time Waveform Fig.11 Unclamped Inductive Switching Waveform 4