UNITPOWER UD04N65

UD04N65
機密
第 1 頁
2011-03-14
-1-
N-Ch 650V Fast Switching MOSFETs
General Description
Product Summery
The UD04N65 is the highest performance N-ch
MOSFETs with extreme high cell density , which
provide excellent RDSON and gate charge for
most of the synchronous buck converter
applications .
The UD04N65 meet the RoHS and Green
Product requirement , 100% EAS guaranteed with
full function reliability approved.
BVDSS
RDS(ON)
ID
650V
2.6 Ω
4A
Applications
z High efficient switched mode power supplies
z Electronic lamp ballast
z LCD TV/ Monitor
Features
z Adapter
TO252 Pin Configuration
z Super Low Gate Charge
z Excellent CdV/dt effect decline
z 100% EAS Guaranteed
z Green Device Available
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TC=25℃
ID@TC=100℃
IDM
Rating
Units
Drain-Source Voltage
650
V
Gate-Source Voltage
±30
V
1
4
A
1
2.6
A
8
A
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
2
3
EAS
Single Pulse Avalanche Energy
26.2
mJ
IAS
Avalanche Current
7
A
4
PD@TC=25℃
Total Power Dissipation
62.5
W
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
RθJA
RθJC
Parameter
Typ.
Thermal Resistance Junction-ambient (Steady State)
1
Thermal Resistance Junction-Case
1
1
Max.
Unit
---
62
℃/W
---
2
℃/W
UD04N65
機密
第 2 頁
2011-03-14
-2-
N-Ch 650V Fast Switching MOSFETs
Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
Symbol
BVDSS
Parameter
Conditions
Drain-Source Breakdown Voltage
Min.
Typ.
Max.
Unit
650
---
---
V
Reference to 25℃ , ID=1mA
---
0.69
---
V/℃
VGS=10V , ID=2A
---
2.1
2.6
Ω
2
---
5
V
VGS=0V , ID=250uA
△BVDSS/△TJ BVDSS Temperature Coefficient
2
RDS(ON)
Static Drain-Source On-Resistance
VGS(th)
Gate Threshold Voltage
VGS=VDS , ID =250uA
△VGS(th)
VGS(th) Temperature Coefficient
---
-8.2
---
mV/℃
IDSS
Drain-Source Leakage Current
VDS=520V , VGS=0V , TJ=25℃
---
---
2
uA
IGSS
Gate-Source Leakage Current
VGS=±30V , VDS=0V
---
---
±100
nA
gfs
Forward Transconductance
VDS=15V , ID=2A
---
3
---
S
Rg
Gate Resistance
VDS=0V , VGS=0V , f=1MHz
---
3.4
6.8
Ω
Qg
Total Gate Charge (10V)
---
18
---
Qgs
Gate-Source Charge
---
4.9
---
Qgd
Gate-Drain Charge
---
6.1
---
Td(on)
VDS=520V , VGS=10V , ID=1A
---
11.2
---
Rise Time
VDD=300V , VGS=10V , RG=10Ω,
---
18.8
---
Turn-Off Delay Time
ID=1A
---
29.2
---
Fall Time
---
29.2
---
Ciss
Input Capacitance
---
775
---
Coss
Output Capacitance
---
56
---
Crss
Reverse Transfer Capacitance
---
3.8
---
Min.
Typ.
Max.
Unit
8.6
---
---
mJ
Min.
Typ.
Max.
Unit
---
---
4
A
---
---
8
A
---
---
1
V
---
195
---
nS
---
580
---
nC
Tr
Td(off)
Tf
Turn-On Delay Time
nC
VDS=25V , VGS=0V , F=1MHz
ns
pF
Guaranteed Avalanche Characteristics
Symbol
EAS
Parameter
Conditions
5
Single Pulse Avalanche Energy
VDD=50V , L=1mH , IAS=4A
Diode Characteristics
Symbol
Parameter
Conditions
1,6
IS
Continuous Source Current
ISM
Pulsed Source Current
2,6
2
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VG=VD=0V , Force Current
VGS=0V , IS=1A , TJ=25℃
IF=1A , dI/dt=100A/µs , TJ=25℃
Note :
2
1.The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%
3.The EAS data shows Max. rating . The test condition is VDD=50V,VGS=10V,L=1mH,IAS=7A
4.The power dissipation is limited by 150℃ junction temperature
5.The Min. value is 100% EAS tested guarantee.
6.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
2
UD04N65
機密
第 3 頁
2011-03-14
-3-
N-Ch 650V Fast Switching MOSFETs
Typical Characteristics
5.5
ID=2A
RDSON (Ω)
4.5
3.5
2.5
1.5
4
Fig.1 Typical Output Characteristics
6
VGS (V)
8
10
Fig.2 On-Resistance vs. G-S Voltage
3
IS Source Current(A)
2.5
2
1.5
TJ=150℃
TJ=25℃
1
0.5
0
0.00
0.25
0.50
0.75
1.00
VSD , Source-to-Drain Voltage (V)
Fig.3 Forward Characteristics of Reverse
Fig.4 Gate-Charge Characteristics
2.8
Normalized On Resistance
1.8
2.2
Normalized VGS(th) (V)
1.4
1.6
1
0.6
1.0
0.2
0.4
-50
0
50
100
150
-50
TJ ,Junction Temperature (℃ )
Fig.5 Normalized VGS(th) vs. TJ
0
50
100
TJ , Junction Temperature (℃)
Fig.6 Normalized RDSON vs. TJ
3
150
UD04N65
機密
第 4 頁
2011-03-14
-4-
N-Ch 650V Fast Switching MOSFETs
10000
10.00
10us
F=1.0MHz
1.00
100
ID (A)
Capacitance (pF)
100us
Ciss
1000
Coss
10ms
100ms
DC
0.10
10
Crss
TC=25℃
Single Pulse
0.01
1
1
5
9
13
17
21
0.1
25
1
10
100
1000
10000
VDS (V)
VDS , Drain to Source Voltage (V)
Fig.7 Capacitance
Fig.8 Safe Operating Area
Normalized Thermal Response (RθJC)
1
DUTY=0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
P DM
T ON
SINGLE
T
D = TON/T
TJpeak = TC+P DMXRθJC
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
t , Pulse Width (s)
Fig.9 Normalized Maximum Transient Thermal Impedance
Fig.10 Switching Time Waveform
Fig.11 Unclamped Inductive Switching Waveform
4