UD6001

UD6001
P-Ch 60V Fast Switching MOSFETs
General Description
Product Summery
The UD6001 is the highest performance trench
P-ch MOSFETs with extreme high cell density ,
which provide excellent RDSON and gate charge
for most of the synchronous buck converter
applications .
The UD6001 meet the RoHS and Green Product
requirement , 100% EAS guaranteed with full
function reliability approved.
BVDSS
RDS(ON)
ID
-60V
110mΩ
-11.5A
Applications
z Power management in half bridge and inverters
z DC-DC Converter
z LCD / LED Backlight Application
Features
z Advanced high cell density Trench technology
TO252 Pin Configuration
z Super Low Gate Charge
z Excellent CdV/dt effect decline
z 100% EAS Guaranteed
z Green Device Available
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
-60
V
VGS
Gate-Source Voltage
±20
V
1
-11.5
A
1
-8.9
A
-23
A
[email protected]=25℃
[email protected]=100℃
IDM
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
2
3
EAS
Single Pulse Avalanche Energy
29
mJ
IAS
Avalanche Current
-20
A
4
[email protected]=25℃
Total Power Dissipation
16
W
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Parameter
Typ.
RθJA
Thermal Resistance Junction-Ambient
RθJC
Thermal Resistance Junction-Case1
1
1
Max.
Unit
---
62
℃/W
---
5
℃/W
UD6001
P-Ch 60V Fast Switching MOSFETs
Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
Symbol
BVDSS
Parameter
Conditions
Drain-Source Breakdown Voltage
△BVDSS/△TJ BVDSS Temperature Coefficient
RDS(ON)
VGS(th)
Static Drain-Source On-Resistance2
Gate Threshold Voltage
Min.
Typ.
Max.
Unit
VGS=0V , ID=-250uA
-60
---
---
V
Reference to 25℃ , ID=-1mA
---
-0.049
---
V/℃
VGS=-10V , ID=-8A
---
98
110
VGS=-4.5V , ID=-6A
---
140
160
-2.5
V
---
5.42
---
mV/℃
VDS=-48V , VGS=0V , TJ=25℃
---
---
1
VDS=-48V , VGS=0V , TJ=150℃
---
---
5
Gate-Source Leakage Current
VGS=±20V , VDS=0V
---
---
±100
nA
gfs
Forward Transconductance
VDS=-5V , ID=-5A
---
5.8
---
S
Qg
Total Gate Charge (-4.5V)
---
5.85
---
Qgs
Gate-Source Charge
---
2.92
---
Qgd
Gate-Drain Charge
---
1.8
---
---
10
---
△VGS(th)
VGS(th) Temperature Coefficient
IDSS
Drain-Source Leakage Current
IGSS
Td(on)
VGS=VDS , ID =-250uA
VDS=-20V , VGS=-4.5V , ID=-5A
Turn-On Delay Time
-1.0
mΩ
uA
nC
Rise Time
VDD=-12V , VGS=-10V , RG=3.3Ω,
---
17
---
Turn-Off Delay Time
ID=-5A
---
22
---
Fall Time
---
21
---
Ciss
Input Capacitance
---
715
---
Coss
Output Capacitance
---
51
---
Crss
Reverse Transfer Capacitance
---
34
---
Min.
Typ.
Max.
Unit
8
---
---
mJ
Min.
Typ.
Max.
Unit
Tr
Td(off)
Tf
VDS=-15V , VGS=0V , F=1MHz
ns
pF
Guaranteed Avalanche Characteristics
Symbol
EAS
Parameter
Conditions
5
Single Pulse Avalanche Energy
VDD=-25V , L=0.1mH , IAS=-10A
Diode Characteristics
Symbol
Parameter
Conditions
1,6
IS
Continuous Source Current
ISM
Pulsed Source Current2,6
VSD
Diode Forward Voltage2
VG=VD=0V , Force Current
VGS=0V , IS=-1A , TJ=25℃
---
---
-11.5
A
---
---
-23
A
---
---
-1.2
V
Note :
2
1.The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%
3.The EAS data shows Max. rating . The test condition is VDD=-25V,VGS=-10V,L=0.1mH,IAS=-20A
4.The power dissipation is limited by 150℃ junction temperature
5.The Min. value is 100% EAS tested guarantee.
6.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
2
UD6001
P-Ch 60V Fast Switching MOSFETs
P-Channel Typical Characteristics
8
215
6
180
VGS=-10V
VGS=-7V
4
VGS=-4.5V
RDSON (mΩ)
-ID Drain Current (A)
ID=-5A
VGS=-5V
145
VGS=-4V
2
110
0
0
0.5
1
1.5
75
2
2
-VDS , Drain-to-Source Voltage (V)
Fig.1 Typical Output Characteristics
10
-VGS Gate to Source Voltage (V)
8
-IS Source Current(A)
6
8
-VGS (V)
10
Fig.2 On-Resistance vs. G-S Voltage
10
VDS=-12V
ID =-5A
7.5
TJ=150℃
TJ=25℃
6
4
5
2.5
2
0
0
0.2
0.4
0.6
0.8
1
0
-VSD , Source-to-Drain Voltage (V)
Fig.3 Forward Characteristics Of Reverse
3.5
7
10.5
QG , Total Gate Charge (nC)
14
Fig.4 Gate-Charge Characteristics
2.0
Normalized On Resistance
1.8
1.4
Normalized -VGS(th)
4
1.5
1
1.0
0.6
0.5
0.2
-50
0
50
100
TJ ,Junction Temperature (℃)
-50
150
Fig.5 Normalized VGS(th) vs. TJ
25
100
TJ , Junction Temperature (℃)
Fig.6 Normalized RDSON vs. TJ
3
175
UD6001
P-Ch 60V Fast Switching MOSFETs
1000
100
Ciss
10us
100us
-ID (A)
Capatince (pF)
10
100
Coss
1
10ms
100ms
Crss
F=1.0MHz
0
10
1
5
DC
TC=25℃
Single Pulse
9
13
-VDS (V)
17
21
0.1
25
1
10
100
1000
-VDS (V)
Fig.7 Capacitance
Fig.8 Safe Operating Area
Normalized Thermal Response (RθJC )
1
DUTY=0.5
0.2
0.1
0.1
0.05
PDM
0.02
T
D = TON/T
TJpeak = TC + PDM x RθJC
0.01
SINGLE PULSE
0.01
0.00001
TON
0.0001
0.001
0.01
0.1
1
t , Pulse Width (s)
Fig.9 Normalized Maximum Transient Thermal Impedance
Fig.10 Switching Time Waveform
Fig.11 Unclamped Inductive Waveform
4
10