UM6016 N-Ch 60V Fast Switching MOSFETs General Description Product Summery The UM6016 is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . The UM6016 meet the RoHS and Green Product requirement , 100% EAS guaranteed with full function reliability approved. BVDSS RDS(ON) ID 60V 12mΩ 8A Applications z High Frequency Point-of-Load Synchronous Buck Converter for MB/NB/UMPC/VGA z Networking DC-DC Power System Features z LCD/LED back light SOP8 Pin Configuration z Advanced high cell density Trench technology z Super Low Gate Charge z Excellent CdV/dt effect decline z 100% EAS Guaranteed z Green Device Available Absolute Maximum Ratings Symbol Parameter VDS VGS ID@TA=25℃ ID@TA=70℃ IDM Rating Units Drain-Source Voltage 60 V Gate-Source Voltage ±20 V 1 8 A 1 6.4 A 32 A Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 2 3 EAS Single Pulse Avalanche Energy 123 mJ IAS Avalanche Current 38 A 4 PD@TA=25℃ Total Power Dissipation 1.5 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter Typ. RθJA Thermal Resistance Junction-Ambient RθJC 1 Thermal Resistance Junction-Case 1 1 Max. Unit --- 85 ℃/W --- 24 ℃/W UM6016 N-Ch 60V Fast Switching MOSFETs Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Conditions Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) VGS(th) Static Drain-Source On-Resistance2 Gate Threshold Voltage Min. Typ. Max. Unit VGS=0V , ID=250uA 60 --- --- V Reference to 25℃ , ID=1mA --- 0.052 --- V/℃ VGS=10V , ID=8A --- 10 12 VGS=4.5V , ID=6A --- 12 15 1.2 --- 2.5 V --- -5.76 --- mV/℃ VDS=48V , VGS=0V , TJ=25℃ --- --- 1 VDS=48V , VGS=0V , TJ=55℃ --- --- 5 VGS=VDS , ID =250uA mΩ △VGS(th) VGS(th) Temperature Coefficient IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=5V , ID=8A --- 45 --- S Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 1.5 3 Ω Qg Total Gate Charge (4.5V) --- 30 42 Qgs Gate-Source Charge --- 10.7 15 Qgd Gate-Drain Charge --- 9.4 13.2 Td(on) VDS=48V , VGS=4.5V , ID=8A Turn-On Delay Time uA nC --- 10.6 21.2 Rise Time VDD=30V , VGS=10V , RG=3.3Ω, --- 9 16 Turn-Off Delay Time ID=8A --- 65.6 131 Fall Time --- 4.8 9.6 Ciss Input Capacitance --- 3240 4536 Coss Output Capacitance --- 210 294 Crss Reverse Transfer Capacitance --- 146 204 Min. Typ. Max. Unit 77 --- --- mJ Min. Typ. Max. Unit --- --- 8 A --- --- 32 A --- --- 1.2 V --- 18 --- nS --- 15.6 --- nC Tr Td(off) Tf VDS=15V , VGS=0V , f=1MHz ns pF Guaranteed Avalanche Characteristics Symbol EAS Parameter Conditions 5 Single Pulse Avalanche Energy VDD=25V , L=0.1mH , IAS=30A Diode Characteristics Symbol Parameter Conditions 1,6 IS Continuous Source Current ISM Pulsed Source Current2,6 VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge 2 VG=VD=0V , Force Current VGS=0V , IS=A , TJ=25℃ IF=8A , dI/dt=100A/µs , TJ=25℃ Note : 2 1.The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V,L=0.1mH,IAS=38A 4.The power dissipation is limited by 150℃ junction temperature 5.The Min. value is 100% EAS tested guarantee. 6.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. 2 UM6016 N-Ch 60V Fast Switching MOSFETs Typical Characteristics 12 32 ID=8A VGS=10V VGS=7V VGS=5V ID Drain Current (A) 24 11 RDSON (mΩ) VGS=4.5V 11 16 VGS=3V 8 10 0 10 0 0.1 0.2 0.3 0.4 VDS , Drain-to-Source Voltage (V) 0.5 4 6 VGS (V) 8 10 Fig.2 On-Resistance v.s Gate-Source Fig.1 Typical Output Characteristics 12 IS Source Current(A) 10 8 6 TJ=150℃ TJ=25℃ 4 2 0 0.2 0.4 0.6 0.8 1 VSD , Source-to-Drain Voltage (V) Fig.4 Gate-Charge Characteristics Fig.3 Forward Characteristics of Reverse 2.0 Normalized On Resistance Normalized VGS(th) 1.5 1.5 1 1.0 0.5 0.5 0 -50 0 50 100 TJ ,Junction Temperature ( ℃) -50 150 0 50 100 TJ , Junction Temperature (℃) Fig.5 Normalized VGS(th) vs. TJ Fig.6 Normalized RDSON vs. TJ 3 150 UM6016 N-Ch 60V Fast Switching MOSFETs 10000 100.00 F=1.0MHz 100us Capacitance (pF) Ciss 10.00 1000 ID (A) 1ms 1.00 Coss 100 10ms 100ms Crss 0.10 o TA=25 C Single Pulse 0.01 0.01 10 1 5 9 13 17 VDS Drain to Source Voltage(V) 21 25 Fig.7 Capacitance DC 0.1 1 VDS (V) 10 100 1000 Fig.8 Safe Operating Area Normalized Thermal Response (RθJA) 1 DUTY=0.5 0.2 0.1 0.1 0.05 0.01 P DM 0.01 T ON T D = TON/T TJpeak = TC+P DMXRθJC SINGLE 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 t , Pulse Width (s) Fig.9 Normalized Maximum Transient Thermal Impedance Fig.10 Switching Time Waveform Fig.11 Unclamped Inductive Switching Waveform 4