UNITPOWER UM6016

UM6016
N-Ch 60V Fast Switching MOSFETs
General Description
Product Summery
The UM6016 is the highest performance trench
N-ch MOSFETs with extreme high cell density ,
which provide excellent RDSON and gate charge
for most of the synchronous buck converter
applications .
The UM6016 meet the RoHS and Green Product
requirement , 100% EAS guaranteed with full
function reliability approved.
BVDSS
RDS(ON)
ID
60V
12mΩ
8A
Applications
z High Frequency Point-of-Load Synchronous
Buck Converter for MB/NB/UMPC/VGA
z Networking DC-DC Power System
Features
z LCD/LED back light
SOP8 Pin Configuration
z Advanced high cell density Trench technology
z Super Low Gate Charge
z Excellent CdV/dt effect decline
z 100% EAS Guaranteed
z Green Device Available
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
[email protected]=25℃
[email protected]=70℃
IDM
Rating
Units
Drain-Source Voltage
60
V
Gate-Source Voltage
±20
V
1
8
A
1
6.4
A
32
A
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
2
3
EAS
Single Pulse Avalanche Energy
123
mJ
IAS
Avalanche Current
38
A
4
[email protected]=25℃
Total Power Dissipation
1.5
W
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Parameter
Typ.
RθJA
Thermal Resistance Junction-Ambient
RθJC
1
Thermal Resistance Junction-Case
1
1
Max.
Unit
---
85
℃/W
---
24
℃/W
UM6016
N-Ch 60V Fast Switching MOSFETs
Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
Symbol
BVDSS
Parameter
Conditions
Drain-Source Breakdown Voltage
△BVDSS/△TJ BVDSS Temperature Coefficient
RDS(ON)
VGS(th)
Static Drain-Source On-Resistance2
Gate Threshold Voltage
Min.
Typ.
Max.
Unit
VGS=0V , ID=250uA
60
---
---
V
Reference to 25℃ , ID=1mA
---
0.052
---
V/℃
VGS=10V , ID=8A
---
10
12
VGS=4.5V , ID=6A
---
12
15
1.2
---
2.5
V
---
-5.76
---
mV/℃
VDS=48V , VGS=0V , TJ=25℃
---
---
1
VDS=48V , VGS=0V , TJ=55℃
---
---
5
VGS=VDS , ID =250uA
mΩ
△VGS(th)
VGS(th) Temperature Coefficient
IDSS
Drain-Source Leakage Current
IGSS
Gate-Source Leakage Current
VGS=±20V , VDS=0V
---
---
±100
nA
gfs
Forward Transconductance
VDS=5V , ID=8A
---
45
---
S
Rg
Gate Resistance
VDS=0V , VGS=0V , f=1MHz
---
1.5
3
Ω
Qg
Total Gate Charge (4.5V)
---
30
42
Qgs
Gate-Source Charge
---
10.7
15
Qgd
Gate-Drain Charge
---
9.4
13.2
Td(on)
VDS=48V , VGS=4.5V , ID=8A
Turn-On Delay Time
uA
nC
---
10.6
21.2
Rise Time
VDD=30V , VGS=10V , RG=3.3Ω,
---
9
16
Turn-Off Delay Time
ID=8A
---
65.6
131
Fall Time
---
4.8
9.6
Ciss
Input Capacitance
---
3240
4536
Coss
Output Capacitance
---
210
294
Crss
Reverse Transfer Capacitance
---
146
204
Min.
Typ.
Max.
Unit
77
---
---
mJ
Min.
Typ.
Max.
Unit
---
---
8
A
---
---
32
A
---
---
1.2
V
---
18
---
nS
---
15.6
---
nC
Tr
Td(off)
Tf
VDS=15V , VGS=0V , f=1MHz
ns
pF
Guaranteed Avalanche Characteristics
Symbol
EAS
Parameter
Conditions
5
Single Pulse Avalanche Energy
VDD=25V , L=0.1mH , IAS=30A
Diode Characteristics
Symbol
Parameter
Conditions
1,6
IS
Continuous Source Current
ISM
Pulsed Source Current2,6
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
2
VG=VD=0V , Force Current
VGS=0V , IS=A , TJ=25℃
IF=8A , dI/dt=100A/µs , TJ=25℃
Note :
2
1.The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%
3.The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V,L=0.1mH,IAS=38A
4.The power dissipation is limited by 150℃ junction temperature
5.The Min. value is 100% EAS tested guarantee.
6.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
2
UM6016
N-Ch 60V Fast Switching MOSFETs
Typical Characteristics
12
32
ID=8A
VGS=10V
VGS=7V
VGS=5V
ID Drain Current (A)
24
11
RDSON (mΩ)
VGS=4.5V
11
16
VGS=3V
8
10
0
10
0
0.1
0.2
0.3
0.4
VDS , Drain-to-Source Voltage (V)
0.5
4
6
VGS (V)
8
10
Fig.2 On-Resistance v.s Gate-Source
Fig.1 Typical Output Characteristics
12
IS Source Current(A)
10
8
6
TJ=150℃
TJ=25℃
4
2
0
0.2
0.4
0.6
0.8
1
VSD , Source-to-Drain Voltage (V)
Fig.4 Gate-Charge Characteristics
Fig.3 Forward Characteristics of Reverse
2.0
Normalized On Resistance
Normalized VGS(th)
1.5
1.5
1
1.0
0.5
0.5
0
-50
0
50
100
TJ ,Junction Temperature ( ℃)
-50
150
0
50
100
TJ , Junction Temperature (℃)
Fig.5 Normalized VGS(th) vs. TJ
Fig.6 Normalized RDSON vs. TJ
3
150
UM6016
N-Ch 60V Fast Switching MOSFETs
10000
100.00
F=1.0MHz
100us
Capacitance (pF)
Ciss
10.00
1000
ID (A)
1ms
1.00
Coss
100
10ms
100ms
Crss
0.10
o
TA=25 C
Single Pulse
0.01
0.01
10
1
5
9
13
17
VDS Drain to Source Voltage(V)
21
25
Fig.7 Capacitance
DC
0.1
1
VDS (V)
10
100
1000
Fig.8 Safe Operating Area
Normalized Thermal Response (RθJA)
1
DUTY=0.5
0.2
0.1
0.1
0.05
0.01
P DM
0.01
T ON
T
D = TON/T
TJpeak = TC+P DMXRθJC
SINGLE
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
t , Pulse Width (s)
Fig.9 Normalized Maximum Transient Thermal Impedance
Fig.10 Switching Time Waveform
Fig.11 Unclamped Inductive Switching Waveform
4