US3003 P-Ch 30V Fast Switching MOSFETs General Description Product Summery The US3003 is the highest performance trench P-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . The US3003 meet the RoHS and Green Product requirement , 100% EAS guaranteed with full function reliability approved. BVDSS RDS(ON) ID -30V 32mΩ -4.8A Applications z High Frequency Point-of-Load Synchronous Buck Converter for MB/NB/UMPC/VGA z Networking DC-DC Power System z Load Switch Features z Advanced high cell density Trench technology SOT23 Pin Configuration z Super Low Gate Charge z Excellent CdV/dt effect decline z 100% EAS Guaranteed z Green Device Available Absolute Maximum Ratings Rating Symbol Parameter VDS Drain-Source Voltage -30 V VGS Gate-Source Voltage ±20 V ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ 10s Units 1 -5.5 -4.8 A 1 -4.3 -3.8 A Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V Pulsed Drain Current Steady State 2 -24 A 3 1.32 1 W 3 0.84 0.64 W Total Power Dissipation PD@TA=70℃ Total Power Dissipation TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol RθJA RθJA RθJC Parameter Thermal Resistance Junction-Ambient 1 1 Thermal Resistance Junction-Ambient (t ≤10s) 1 Thermal Resistance Junction-Case 1 Typ. Max. Unit --- 125 ℃/W --- 95 ℃/W --- 80 ℃/W US3003 P-Ch 30V Fast Switching MOSFETs Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Conditions Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) VGS(th) Static Drain-Source On-Resistance2 Gate Threshold Voltage Min. Typ. Max. Unit VGS=0V , ID=-250uA -30 --- --- V Reference to 25℃ , ID=-1mA --- -0.022 --- V/℃ VGS=-10V , ID=-4A --- 26 32 VGS=-4.5V , ID=-2A --- 36 45 -1.0 -1.5 -2.5 V --- 4.6 --- mV/℃ VDS=-24V , VGS=0V , TJ=25℃ --- --- 1 VDS=-24V , VGS=0V , TJ=55℃ --- --- 5 VGS=VDS , ID =-250uA mΩ △VGS(th) VGS(th) Temperature Coefficient IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=-5V , ID=-4A --- 15.8 --- S Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 13 26 Ω Qg Total Gate Charge (-4.5V) --- 12.6 17.6 Qgs Gate-Source Charge --- 4.52 6.3 Qgd Gate-Drain Charge --- 4.72 6.6 Td(on) VDS=-15V , VGS=-4.5V , ID=-4A Turn-On Delay Time uA nC --- 4.8 9.6 Rise Time VDD=-15V , VGS=-10V , RG=3.3Ω, --- 35 63.0 Turn-Off Delay Time ID=-4A --- 42 84 Fall Time --- 21 42.0 Ciss Input Capacitance --- 1345 1883 Coss Output Capacitance --- 194 272 Crss Reverse Transfer Capacitance --- 158 221 Min. Typ. Max. Unit --- --- -4.8 A --- --- -24 A --- --- -1.2 V --- 18.3 --- nS --- 7.2 --- nC Tr Td(off) Tf VDS=-15V , VGS=0V , f=1MHz ns pF Diode Characteristics Symbol Parameter Conditions 1,4 IS Continuous Source Current ISM Pulsed Source Current 2,4 2 VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VG=VD=0V , Force Current VGS=0V , IS=-1A , TJ=25℃ IF=-4A , dI/dt=100A/µs , TJ=25℃ Note : 2 1.The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The power dissipation is limited by 150℃ junction temperature 4.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. 2 US3003 P-Ch 30V Fast Switching MOSFETs Typical Characteristics 48 ID=-4A RDSON (mΩ) 43 38 33 28 4 Fig.1 Typical Output Characteristics 6 -VGS (V) 8 10 Fig.2 On-Resistance v.s Gate-Source 12 -IS Source Current(A) 10 8 6 TJ=150℃ TJ=25℃ 4 2 0 0.2 0.4 0.6 0.8 1 -VSD , Source-to-Drain Voltage (V) Fig.3 Forward Characteristics of Reverse Fig.4 Gate-Charge Characteristics 2.0 Normalized On Resistance Normalized VGS(th) 1.5 1.5 1 1.0 0.5 0.5 0 -50 0 50 100 TJ ,Junction Temperature ( ℃) -50 150 0 50 100 TJ , Junction Temperature (℃) Fig.6 Normalized RDSON vs. TJ Fig.5 Normalized VGS(th) vs. TJ 3 150 US3003 P-Ch 30V Fast Switching MOSFETs 10000 F=1.0MHz Capacitance (pF) Ciss 1000 Coss 100 Crss 10 1 5 9 13 17 -VDS Drain to Source Voltage(V) 21 25 Fig.7 Capacitance Fig.8 Safe Operating Area Normalized Thermal Response (R θJA) 1 DUTY=0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 PDM 0.001 TON SINGLE PULSE T D = TON/T TJpeak = TC + PDM x RθJC 0.0001 0.0001 0.001 0.01 0.1 1 10 100 t , Pulse Width (s) Fig.9 Normalized Maximum Transient Thermal Impedance Fig.10 Switching Time Waveform Fig.11 Gate Charge Waveform 4 1000