UNITPOWER UI01N65

機密
UI01N65
第 1 頁
2011-05-25
-1-
N-Ch 650V Fast Switching MOSFETs
General Description
Product Summery
The UI01N65 is the highest performance N-ch
MOSFETs with extreme high cell density , which
provide excellent RDSON and gate charge for
most of the synchronous buck converter
applications .
The UI01N65 meet the RoHS and Green
Product requirement , 100% EAS guaranteed with
full function reliability approved.
BVDSS
RDS(ON)
ID
650V
12 Ω
1.2A
Applications
z High efficient switched mode power supplies
z Electronic lamp ballast
z LCD TV/ Monitor
z Adapter
Features
z Super Low Gate Charge
TO251 Pin Configuration
z Excellent CdV/dt effect decline
z 100% EAS Guaranteed
z Green Device Available
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TC=25℃
ID@TC=100℃
IDM
Rating
Units
Drain-Source Voltage
650
V
Gate-Source Voltage
±30
V
1
1.2
A
1
0.8
A
2.4
A
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
2
3
EAS
Single Pulse Avalanche Energy
67
mJ
IAS
Avalanche Current
1.3
A
4
PD@TC=25℃
Total Power Dissipation
41.6
W
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
RθJA
RθJC
Parameter
Typ.
Thermal Resistance Junction-ambient (Steady State)
1
Thermal Resistance Junction-Case
1
Max.
Unit
---
62
℃/W
---
3
℃/W
Rev A.01 D051711
1
機密
UI01N65
第 2 頁
2011-05-25
-2-
N-Ch 650V Fast Switching MOSFETs
Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
Symbol
BVDSS
Parameter
Conditions
Drain-Source Breakdown Voltage
Min.
Typ.
Max.
Unit
650
---
---
V
Reference to 25℃ , ID=1mA
---
0.66
---
V/℃
VGS=10V , ID=0.3A
---
10.5
12
Ω
2
---
5
V
VGS=0V , ID=250uA
△BVDSS/△TJ BVDSS Temperature Coefficient
2
RDS(ON)
Static Drain-Source On-Resistance
VGS(th)
Gate Threshold Voltage
VGS=VDS , ID =250uA
△VGS(th)
VGS(th) Temperature Coefficient
---
-6.4
---
mV/℃
IDSS
Drain-Source Leakage Current
VDS=520V , VGS=0V , TJ=25℃
---
---
2
uA
IGSS
Gate-Source Leakage Current
VGS=±30V , VDS=0V
---
---
±100
nA
gfs
Forward Transconductance
VDS=10V , ID=0.5A
---
1
---
S
Rg
Gate Resistance
VDS=0V , VGS=0V , f=1MHz
---
4.9
9.8
Ω
Qg
Total Gate Charge (10V)
---
6.03
8.4
Qgs
Gate-Source Charge
---
1.95
2.7
Qgd
Gate-Drain Charge
---
2.3
3.2
Td(on)
VDS=520V , VGS=10V , ID=1A
---
4.4
8.8
Rise Time
VDD=300V , VGS=10V , RG=10Ω,
---
18.4
33
Turn-Off Delay Time
ID=1A
---
7.2
29
Fall Time
---
22.4
45
Ciss
Input Capacitance
---
175
245
Coss
Output Capacitance
---
17.8
25
Crss
Reverse Transfer Capacitance
---
4.3
6
Min.
Typ.
Max.
Unit
40
---
---
mJ
Min.
Typ.
Max.
Unit
---
---
1.2
A
---
---
2.4
A
---
---
1
V
---
181
---
nS
---
336
---
nC
Tr
Td(off)
Tf
Turn-On Delay Time
nC
VDS=25V , VGS=0V , F=1MHz
ns
pF
Guaranteed Avalanche Characteristics
Symbol
EAS
Parameter
Conditions
5
Single Pulse Avalanche Energy
VDD=50V , L=79mH , IAS=1A
Diode Characteristics
Symbol
Parameter
Conditions
1,6
IS
Continuous Source Current
ISM
Pulsed Source Current
2,6
2
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VG=VD=0V , Force Current
VGS=0V , IS=1A , TJ=25℃
IF=1A , dI/dt=100A/µs , TJ=25℃
Note :
2
1.The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%
3.The EAS data shows Max. rating . The test condition is VDD=50V,VGS=10V,L=79mH,IAS=1.3A
4.The power dissipation is limited by 150℃ junction temperature
5.The Min. value is 100% EAS tested guarantee.
6.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
2
機密
UI01N65
第 3 頁
2011-05-25
-3-
N-Ch 650V Fast Switching MOSFETs
Typical Characteristics
Fig.1 Typical Output Characteristics
Fig.2 On-Resistance vs. G-S Voltage
Fig.3 Forward Characteristics of Reverse
Fig.4 Gate-Charge Characteristics
Fig.5 VGS(th) vs. TJ
Fig.6 Normalized RDSON vs. TJ
3
機密
UI01N65
第 4 頁
2011-05-25
-4-
N-Ch 650V Fast Switching MOSFETs
Fig.7 Capacitance
Fig.8 Safe Operating Area
Normalized Thermal Response (RθJC)
1
DUTY=0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
PDM
SINGLE PULSE
TON
T
D = TON/T
TJpeak = TC + PDM x RθJC
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
t , Pulse Width (s)
Fig.9 Normalized Maximum Transient Thermal Impedance
Fig.10 Switching Time Waveform
Fig.11 Unclamped Inductive Switching Waveform
4