XINDEYI UN3002N3

Unitpower
UN3002N3
N-Ch 30V Fast Switching MOSFETs
General Description
Product Summery
The UN3002N3
UN3002N3 is
is the
the highest
highest performance
performance
The
BVDSS
trench N-ch MOSFETs with extreme high cell
density , which provide excellent RDSON and
gate charge for most of the synchronous buck
converter applications .
RDSON
ID
18m
30V
28A
Applications
The UN3002N3 meet the RoHS and Green
Product requirement , 100% EAS guaranteed
with full function reliability approved.
High Frequency Point-of-Load Synchronous
Buck Converter for MB/NB/UMPC/VGA
Networking DC-DC Power System
Features
Load Switch
Advanced high cell density Trench technology
DFN3X3 Pin Configuration
Super Low Gate Charge
D
Excellent CdV/dt effect decline
100% EAS Guaranteed
Green Device Available
S SSG
Absolute Maximum Ratings
Rating
Symbol
Parameter
VDS
Drain-Source Voltage
VGS
Gate-Sou ce Voltage
[email protected]=25
[email protected]=100
[email protected]=25
[email protected]=70
IDM
10s
Steady State
30
Units
V
V
20
1
28
A
1
18
A
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
1
11.8
1
9.5
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current2
3
7.5
A
6
A
65
A
EAS
Single Pulse Avalanche Energy
72
mJ
IAS
Avalanche Current
20
A
20.8
W
[email protected]=25
[email protected]=25
4
Total Power Dissipation
4
Total Power Dissipation
4.2
1.67
TSTG
Storage Temperature Range
-55 to 150
TJ
Operating Junction Temperature Range
-55 to 150
W
Thermal Data
Symbol
R
R
R
JA
JA
JC
Parameter
Typ.
Thermal Resistance Junction-ambient
1
Thermal Resistance Junction-Ambient 1 (t 10s)
Thermal Resistance Junction-Case
1
Max.
Unit
---
75
/W
---
30
/W
---
6
/W
Rev A.02 D070711
1
Unitpower
UN3002N3
N-Ch 30V Fast Switching MOSFETs
Electrical Characteristics (TJ=25
Symbol
BVDSS
BVDSS
RDS(ON)
VGS(th)
, unless otherwise noted)
Parameter
Conditions
Drain-Source Breakdown Voltage
TJ BVDSS Temperature Coefficient
Static Drain-Source On-Resistance2
Gate Threshold Voltage
Min.
Typ.
Max.
Unit
30
---
---
V
---
0.022
---
VGS=10V , ID=15A
---
14.5
18
VGS=4.5V , ID=10A
---
20
26
1.2
1.5
2.5
V
---
-3.92
---
mV/
VDS=24V , VGS=0V , TJ=25
---
---
1
VDS=24V , VGS=0V , TJ=55
---
---
5
---
---
100
nA
S
VGS=0V , ID=250uA
Reference to 25
, ID=1mA
VGS=VDS , ID =250uA
VGS(th)
VGS(th) Temperature Coefficient
IDSS
Drain-Source Leakage Current
IGSS
Gate-Source Leakage Current
VGS
gfs
Forward Transconductance
VDS=5V , ID=15A
---
22
---
Rg
Gate Resistance
VDS=0V , VGS=0V , f=1MHz
---
1.04
2.1
Qg
Total Gate Charge (4.5V)
---
6.1
8.5
Qgs
Gate-Source Charge
---
2
2.8
Qgd
Gate-Drain Charge
---
2
2.8
Td(on)
20V , VDS=0V
VDS=15V , VGS=4.5V , ID=15A
Turn-On Delay Time
V/
m
uA
nC
---
1.2
2.4
Rise Time
VDD=15V , VGS=10V , RG=3.3
---
14.4
26
Turn-Off Delay Time
ID=15A
---
16.4
33
Fall Time
---
7.2
14.4
Ciss
Input Capacitance
---
583
816
Coss
Output Capacitance
---
77
108
Crss
Reverse Transfer Capacitance
---
59
83
Min.
Typ.
Max.
Unit
16
---
---
mJ
Min.
Typ.
Max.
Unit
---
---
28
A
---
---
65
A
---
---
1.2
V
---
7.6
---
nS
---
2.4
---
nC
Tr
Td(off)
Tf
VDS=15V , VGS=0V , f=1MHz
ns
pF
Guaranteed Avalanche Characteristics
Symbol
EAS
Parameter
Conditions
5
Single Pulse Avalanche Energy
VDD=25V , L=0.1mH , IAS=10A
Diode Characteristics
Symbol
Parameter
IS
Continuous Source Current
ISM
Pulsed Source Current2,6
2
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Conditions
1,6
VG=VD=0V , Force Current
VGS=0V , IS=1A , TJ=25
IF=15A , dI/dt=100A/µs , TJ=25
Note :
2
1.The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width
300us , duty cycle
2%
3.The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V,L=0.1mH,IAS=20A
4.The power dissipation is limited by 150
junction temperature
5.The Min. value is 100% EAS tested guarantee.
6.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
2
Unitpower
UN3002N3
N-Ch 30V Fast Switching MOSFETs
Typical Characteristics
28
80
ID=15A
26
60
24
50
RDSON (m )
ID Drain Current (A)
70
VGS=10V
40
22
VGS=7V
30
VGS=5V
20
VGS=4.5V
20
18
10
VGS=3V
0
16
0
1
2
3
VDS , Drain-to-Source Voltage (V)
4
4
Fig.1 Typical Output Characteristics
6
8
VGS (V)
10
Fig.2 On-Resistance vs. Gate-Source
70
10
VDS=15V
VGS , Gate to Source Voltage (V)
IS Source Current(A)
60
50
40
30
TJ=150
TJ=25
20
10
0
0
0.3
0.6
0.9
VSD , Source-to-Drain Voltage (V)
ID =15A
8
6
4
2
0
1.2
0
Fig.3 Forward Characteristics Of Reverse
6
9
QG , Total Gate Charge (nC)
12
15
Fig.4 Gate-Charge Characteristics
1.8
Normalized On Resistance
1.8
1.4
1.4
Normalized VGS(th)
3
1.0
1
0.6
0.6
0.2
0.2
-50
0
50
TJ ,Junction Temperature (
100
-50
150
0
50
100
TJ , Junction Temperature ( )
)
Fig.5 Normalized VGS(th) vs. TJ
Fig.6 Normalized RDSON vs. TJ
3
150
Unitpower
UN3002N3
N-Ch 30V Fast Switching MOSFETs
1000
100.00
10us
100us
10.00
100
ID (A)
Capacitance (pF)
Ciss
Coss
1ms
10ms
100ms
1.00
DC
Crss
0.10
TC=25
Single Pulse
F=1.0MHz
10
1
4
0.01
7
10
13
16
19
22
0.1
1
VDS , Drain to Source Voltage (V)
10
100
VDS (V)
Fig.7 Capacitance
Fig.8 Safe Operating Area
Normalized Thermal Response (R
JC)
1
DUTY=0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
PDM
SINGLE PULSE
TON
T
D = TON/T
TJpeak = TC + PDM x R
0.001
0.00001
0.0001
0.001
0.01
0.1
1
JC
10
t , Pulse Width (s)
Fig.9 Normalized Maximum Transient Thermal Impedance
Fig.10 Switching Time Waveform
Fig.11 Unclamped Inductive Switching Waveform
4