UB09N65 機密 第 1 頁 2011-03-08 -1- N-Ch 650V Fast Switching MOSFETs General Description Product Summery The UB09N65 is the highest performance N-ch MOSFETs with specialized high voltage technology, which provide excellent RDSON and gate charge for most of the SPS, Charger ,Adapter and lighting applications . The UB09N65 meet the RoHS and Green Product requirement , 100% EAS guaranteed with full function reliability approved. BVDSS RDS(ON) ID 650V 1.1Ω 9A Applications z High efficient switched mode power supplies z Electronic lamp ballast z LCD TV/ Monitor z Adapter Features z Super Low Gate Charge TO263 Pin Configuration z Excellent CdV/dt effect decline z 100% EAS Guaranteed z Green Device Available Absolute Maximum Ratings Symbol Parameter VDS VGS ID@TC=25℃ ID@TC=100℃ IDM Rating Units Drain-Source Voltage 650 V Gate-Source Voltage ±30 V 1 9 A 1 7 A 18 A Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 2 3 EAS Single Pulse Avalanche Energy 34 mJ IAS Avalanche Current 8 A 4 PD@TC=25℃ Total Power Dissipation 156 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol RθJA RθJC Parameter Typ. Thermal Resistance Junction-ambient (Steady State) 1 Thermal Resistance Junction-Case 1 1 Max. Unit --- 62 ℃/W --- 0.8 ℃/W UB09N65 機密 第 2 頁 2011-03-08 -2- N-Ch 650V Fast Switching MOSFETs Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Conditions Drain-Source Breakdown Voltage Min. Typ. Max. Unit 650 --- --- V Reference to 25℃ , ID=1mA --- 0.7 --- V/℃ VGS=10V , ID=2.75A --- 0.95 1.1 Ω 2 --- 5 V VGS=0V , ID=250uA △BVDSS/△TJ BVDSS Temperature Coefficient 2 RDS(ON) Static Drain-Source On-Resistance VGS(th) Gate Threshold Voltage VGS=VDS , ID =250uA △VGS(th) VGS(th) Temperature Coefficient --- -8.9 --- mV/℃ IDSS Drain-Source Leakage Current VDS=520V , VGS=0V , TJ=25℃ --- --- 2 uA IGSS Gate-Source Leakage Current VGS=±30V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=10V , ID=2.75A --- 7 --- S Qg Total Gate Charge (10V) --- 33 --- Qgs Gate-Source Charge --- 9.5 --- Qgd Gate-Drain Charge --- 9.8 --- Turn-On Delay Time --- 19 --- Td(on) Tr Td(off) Tf VDS=520V , VGS=10V , ID=1A Rise Time VDD=300V , VGS=10V , RG=10Ω, --- 19.4 --- Turn-Off Delay Time ID=1A --- 56.4 --- nC ns Fall Time --- 38 --- Ciss Input Capacitance --- 1538 --- Coss Output Capacitance --- 100 --- Crss Reverse Transfer Capacitance --- 1.9 --- Min. Typ. Max. Unit 6.6 --- --- mJ Min. Typ. Max. Unit --- --- 9 A --- --- 18 A --- --- 1 V --- 158 --- nS --- 677 --- nC VDS=25V , VGS=0V , F=1MHz pF Guaranteed Avalanche Characteristics Symbol EAS Parameter Conditions 5 Single Pulse Avalanche Energy VDD=50V , L=1mH , IAS=3.5A Diode Characteristics Symbol Parameter Conditions 1,6 IS Continuous Source Current ISM Pulsed Source Current2,6 VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge 2 VG=VD=0V , Force Current VGS=0V , IS=1A , TJ=25℃ IF=1A , dI/dt=100A/µs , TJ=25℃ Note : 2 1.The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The EAS data shows Max. rating . The test condition is VDD=50V,VGS=10V,L=1mH,IAS=8A 4.The power dissipation is limited by 150℃ junction temperature 5.The Min. value is 100% EAS tested guarantee. 6.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. 2 UB09N65 機密 第 3 頁 2011-03-08 -3- N-Ch 650V Fast Switching MOSFETs Typical Characteristics 1.1 8 ID=2.5A ID Drain Current (A) 6 1.05 VGS=10V RDSON (Ω) VGS=8V VGS=7V 4 VGS=6V 2 1 VGS=5V 0.95 0 0.9 0 4 8 12 VDS , Drain-to-Source Voltage (V) 16 4 Fig.1 Typical Output Characteristics 6 VGS (V) 8 10 Fig.2 On-Resistance vs. G-S Voltage 3 2 1.5 TJ=150℃ TJ=25℃ 1 0.5 0 0.00 0.25 0.50 0.75 1.00 VSD , Source-to-Drain Voltage (V) Fig.3 Forward Characteristics of Reverse Fig.4 Gate-Charge Characteristics 2.8 Normalized On Resistance IS Source Current(A) 2.5 2.2 1.6 1.0 0.4 -50 Fig.5 Normalized VGS(th) vs. TJ 0 50 100 TJ , Junction Temperature (℃) Fig.6 Normalized RDSON vs. TJ 3 150 UB09N65 機密 第 4 頁 2011-03-08 -4- N-Ch 650V Fast Switching MOSFETs 10000 F=1.0MHz 100.00 10us 10.00 Ciss ID (A) Coss 100 10 100us 1.00 10ms 100ms DC 0.10 TC=25℃ Single Pulse Crss 0.01 1 1 5 9 13 17 21 0.1 25 1 10 100 1000 10000 VDS (V) VDS , Drain to Source Voltage (V) Fig.7 Capacitance Fig.8 Safe Operating Area 1 Normalized Thermal Response (RθJC) Capacitance (pF) 1000 DUTY=0.5 0.2 0.1 0.1 0.05 PDM 0.02 T D = TON/T 0.01 SINGLE PULSE 0.01 0.00001 TON 0.0001 TJpeak = TC + PDM x RθJC 0.001 0.01 0.1 1 t , Pulse Width (s) Fig.9 Normalized Maximum Transient Thermal Impedance Fig.10 Switching Time Waveform Fig.11 Unclamped Inductive Switching Waveform 4