UB09N65

UB09N65
機密
第 1 頁
2011-03-08
-1-
N-Ch 650V Fast Switching MOSFETs
General Description
Product Summery
The UB09N65 is the highest performance N-ch
MOSFETs with
specialized
high
voltage
technology, which provide excellent RDSON and
gate charge for most of the SPS, Charger ,Adapter
and lighting applications .
The UB09N65 meet the RoHS and Green
Product requirement , 100% EAS guaranteed with
full function reliability approved.
BVDSS
RDS(ON)
ID
650V
1.1Ω
9A
Applications
z High efficient switched mode power supplies
z Electronic lamp ballast
z LCD TV/ Monitor
z Adapter
Features
z Super Low Gate Charge
TO263 Pin Configuration
z Excellent CdV/dt effect decline
z 100% EAS Guaranteed
z Green Device Available
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
[email protected]=25℃
[email protected]=100℃
IDM
Rating
Units
Drain-Source Voltage
650
V
Gate-Source Voltage
±30
V
1
9
A
1
7
A
18
A
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
2
3
EAS
Single Pulse Avalanche Energy
34
mJ
IAS
Avalanche Current
8
A
4
[email protected]=25℃
Total Power Dissipation
156
W
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
RθJA
RθJC
Parameter
Typ.
Thermal Resistance Junction-ambient (Steady State)
1
Thermal Resistance Junction-Case
1
1
Max.
Unit
---
62
℃/W
---
0.8
℃/W
UB09N65
機密
第 2 頁
2011-03-08
-2-
N-Ch 650V Fast Switching MOSFETs
Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
Symbol
BVDSS
Parameter
Conditions
Drain-Source Breakdown Voltage
Min.
Typ.
Max.
Unit
650
---
---
V
Reference to 25℃ , ID=1mA
---
0.7
---
V/℃
VGS=10V , ID=2.75A
---
0.95
1.1
Ω
2
---
5
V
VGS=0V , ID=250uA
△BVDSS/△TJ BVDSS Temperature Coefficient
2
RDS(ON)
Static Drain-Source On-Resistance
VGS(th)
Gate Threshold Voltage
VGS=VDS , ID =250uA
△VGS(th)
VGS(th) Temperature Coefficient
---
-8.9
---
mV/℃
IDSS
Drain-Source Leakage Current
VDS=520V , VGS=0V , TJ=25℃
---
---
2
uA
IGSS
Gate-Source Leakage Current
VGS=±30V , VDS=0V
---
---
±100
nA
gfs
Forward Transconductance
VDS=10V , ID=2.75A
---
7
---
S
Qg
Total Gate Charge (10V)
---
33
---
Qgs
Gate-Source Charge
---
9.5
---
Qgd
Gate-Drain Charge
---
9.8
---
Turn-On Delay Time
---
19
---
Td(on)
Tr
Td(off)
Tf
VDS=520V , VGS=10V , ID=1A
Rise Time
VDD=300V , VGS=10V , RG=10Ω,
---
19.4
---
Turn-Off Delay Time
ID=1A
---
56.4
---
nC
ns
Fall Time
---
38
---
Ciss
Input Capacitance
---
1538
---
Coss
Output Capacitance
---
100
---
Crss
Reverse Transfer Capacitance
---
1.9
---
Min.
Typ.
Max.
Unit
6.6
---
---
mJ
Min.
Typ.
Max.
Unit
---
---
9
A
---
---
18
A
---
---
1
V
---
158
---
nS
---
677
---
nC
VDS=25V , VGS=0V , F=1MHz
pF
Guaranteed Avalanche Characteristics
Symbol
EAS
Parameter
Conditions
5
Single Pulse Avalanche Energy
VDD=50V , L=1mH , IAS=3.5A
Diode Characteristics
Symbol
Parameter
Conditions
1,6
IS
Continuous Source Current
ISM
Pulsed Source Current2,6
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
2
VG=VD=0V , Force Current
VGS=0V , IS=1A , TJ=25℃
IF=1A , dI/dt=100A/µs , TJ=25℃
Note :
2
1.The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%
3.The EAS data shows Max. rating . The test condition is VDD=50V,VGS=10V,L=1mH,IAS=8A
4.The power dissipation is limited by 150℃ junction temperature
5.The Min. value is 100% EAS tested guarantee.
6.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
2
UB09N65
機密
第 3 頁
2011-03-08
-3-
N-Ch 650V Fast Switching MOSFETs
Typical Characteristics
1.1
8
ID=2.5A
ID Drain Current (A)
6
1.05
VGS=10V
RDSON (Ω)
VGS=8V
VGS=7V
4
VGS=6V
2
1
VGS=5V
0.95
0
0.9
0
4
8
12
VDS , Drain-to-Source Voltage (V)
16
4
Fig.1 Typical Output Characteristics
6
VGS (V)
8
10
Fig.2 On-Resistance vs. G-S Voltage
3
2
1.5
TJ=150℃
TJ=25℃
1
0.5
0
0.00
0.25
0.50
0.75
1.00
VSD , Source-to-Drain Voltage (V)
Fig.3 Forward Characteristics of Reverse
Fig.4 Gate-Charge Characteristics
2.8
Normalized On Resistance
IS Source Current(A)
2.5
2.2
1.6
1.0
0.4
-50
Fig.5 Normalized VGS(th) vs. TJ
0
50
100
TJ , Junction Temperature (℃)
Fig.6 Normalized RDSON vs. TJ
3
150
UB09N65
機密
第 4 頁
2011-03-08
-4-
N-Ch 650V Fast Switching MOSFETs
10000
F=1.0MHz
100.00
10us
10.00
Ciss
ID (A)
Coss
100
10
100us
1.00
10ms
100ms
DC
0.10
TC=25℃
Single Pulse
Crss
0.01
1
1
5
9
13
17
21
0.1
25
1
10
100
1000
10000
VDS (V)
VDS , Drain to Source Voltage (V)
Fig.7 Capacitance
Fig.8 Safe Operating Area
1
Normalized Thermal Response (RθJC)
Capacitance (pF)
1000
DUTY=0.5
0.2
0.1
0.1
0.05
PDM
0.02
T
D = TON/T
0.01
SINGLE PULSE
0.01
0.00001
TON
0.0001
TJpeak = TC + PDM x RθJC
0.001
0.01
0.1
1
t , Pulse Width (s)
Fig.9 Normalized Maximum Transient Thermal Impedance
Fig.10 Switching Time Waveform
Fig.11 Unclamped Inductive Switching Waveform
4