RoHS 2SC2873 2SC2873 SOT-89 TRANSISTOR (NPN) D T ,. L 1. BASE FEATURES Power dissipation 2. COLLECTOR PCM: 0.5 W (Tamb=25℃) 2 Parameter IC C unless otherwise specified) Symbol Test Collector-base breakdown voltage V(BR)CBO Collector-emitter breakdown voltage V(BR)CEO Emitter-base breakdown voltage V(BR)EBO O Collector cut-off current O 3 TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ 1 3. EMITTER Collector current ICM: 2 A Collector-base voltage V(BR)CBO: 50 V Operating and storage junction temperature range R T N conditions MIN TYP MAX UNIT Ic=100µA, IE=0 50 V Ic=10mA, IB=0 50 V IE=100µA, IC=0 5 V VCB=50V, IE=0 0.1 µA IEBO VEB=5V, IC=0 0.1 µA hFE(1) VCE=2V, IC=0.5A 70 hFE(2) VCE=2V, IC=2A 20 Collector-emitter saturation voltage VCE(sat) IC=1A, IB=50mA 0.5 V Base-emitter saturation voltage VBE(sat) IC=1A, IB=50mA 1.2 V fT VCE=2V, IC=500mA 120 MHz Collector output capacitance Cob VCB=10V, IE=0, f=1MHz 30 pF Turn-off time ton ICBO C E L Emitter cut-off current DC current gain J E E Transition frequency W Fall time tf Storage time ts 240 0.1 Vcc=30V, Ic=1A 1.0 IB1=-IB2=0.05A 0.1 CLASSIFICATION OF hFE(1) Rank Range Marking WEJ ELECTRONIC CO. O Y 70-140 120-240 MO MY Http:// www.wej.cn E-mail:[email protected] µS RoHS 2SC2873 R T J E O IC C D T ,. L O N C E L E W WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:[email protected]