WINNERJOIN 2SC2873

RoHS
2SC2873
2SC2873
SOT-89
TRANSISTOR (NPN)
D
T
,. L
1. BASE
FEATURES
Power dissipation
2. COLLECTOR
PCM:
0.5
W (Tamb=25℃)
2
Parameter
IC
C
unless otherwise specified)
Symbol
Test
Collector-base breakdown voltage
V(BR)CBO
Collector-emitter breakdown voltage
V(BR)CEO
Emitter-base breakdown voltage
V(BR)EBO
O
Collector cut-off current
O
3
TJ, Tstg: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃
1
3. EMITTER
Collector current
ICM:
2
A
Collector-base voltage
V(BR)CBO:
50
V
Operating and storage junction temperature range
R
T
N
conditions
MIN
TYP
MAX
UNIT
Ic=100µA, IE=0
50
V
Ic=10mA, IB=0
50
V
IE=100µA, IC=0
5
V
VCB=50V, IE=0
0.1
µA
IEBO
VEB=5V, IC=0
0.1
µA
hFE(1)
VCE=2V, IC=0.5A
70
hFE(2)
VCE=2V, IC=2A
20
Collector-emitter saturation voltage
VCE(sat)
IC=1A, IB=50mA
0.5
V
Base-emitter saturation voltage
VBE(sat)
IC=1A, IB=50mA
1.2
V
fT
VCE=2V, IC=500mA
120
MHz
Collector output capacitance
Cob
VCB=10V, IE=0, f=1MHz
30
pF
Turn-off time
ton
ICBO
C
E
L
Emitter cut-off current
DC current gain
J
E
E
Transition frequency
W
Fall time
tf
Storage time
ts
240
0.1
Vcc=30V, Ic=1A
1.0
IB1=-IB2=0.05A
0.1
CLASSIFICATION OF hFE(1)
Rank
Range
Marking
WEJ ELECTRONIC CO.
O
Y
70-140
120-240
MO
MY
Http:// www.wej.cn
E-mail:[email protected]
µS
RoHS
2SC2873
R
T
J
E
O
IC
C
D
T
,. L
O
N
C
E
L
E
W
WEJ ELECTRONIC CO.
Http:// www.wej.cn
E-mail:[email protected]