WINNERJOIN MMBT9012LT1

RoHS
MMBT9012LT1
PNP EPITAXIAL SILICON TRANSISTOR
SOT-23
1W OUTPUT AMPLIFIER OF PORTABLE
1
RADIOS IN CLASS
B PUSH-PULL OPERATION
2
1.
Complement to 9013G
2.4
1.3
0.95
0.95
2.9
1.9
High Total Power Dissipation Pc=225mW
ABSOLUTE MAXIMUM RATINGS
Collector-Base Voltage
Collector-Emitter Voltage
V CBO
Emitter-Base Voltage
V EBO
V CEO
R
T
Ic
Collector Current
o
PD
Collector Dissipation Ta=25 C*
Tj
Junction Temperature
C
E
L
Electrical Characteristics
Parameter
IC
N
Symbol
Characteristic
1.BASE
2.EMITTER
3.COLLECTOR
O
T stg
Symbol
C
0.4
Collector Current :Ic=-500mA
Storage Temperature
D
T
,. L
O
3
Rating
-40
V
-20
V
-5
V
-500
mA
225
mW
150
O
-55~150
O
o
MIN. TYP. MAX. Unit
Condition
V
I C =-100 A I E =0
Collector-Emitter Breakdown Voltage#
BV CEO
-20
V
I C =-1mA I B =0
Emitter-Base Breakdown Voltage
BV EBO
-5
V
I E =-100 A I C =0
Collector -Base Cutoff Current
I CBO
-100
nA
V CB =-25V, V C =0
Emitter-Base Cutoff Current
I EBO
-100
nA
V CB =-3V, I C =0
DC Current Gain
H FE1
64
DC Current Gain
H FE2
30
Collector-Emitter Saturation Voltage
V CE(sat)
J
E
W
C
C
(Ta=25 C)
-40
E
o
(Ta=25 C)
Unit
BV CBO
Collector-Base Breakdown Voltage
Unit:mm
120
300
V CE =-1V, I C =-50mA
V CE =-1V, I C =-500mA
-0.18 -0.6
V
I C =-500mA, I B =-50mA
V
V
I C =-500mA, I B =-50mA
Base-Emitter Saturation Voltage
V BE(sat)
-0.95 -1.2
Base-Emitter On Voltage
V BE(on)
-0.6 -0.67 -0.7
V C e =-1V, I C =-10mA
o
*Total Device Dissipation:FR=1X0.75X0.062 in Board Derate 25 C
_ 300uS Duty cycle <
_ 2%
# Pulse Test: Pulse Width <
DEVICE MARKING:
9012=J6
WEJ ELECTRONIC CO.
Http:// www.wej.cn
E-mail:[email protected]
RoHS
MMBT9012LT1
Typical Characteristics
1000
I B =- 300 A
I B =-25 0 A
-40
h FE ,DC CURRENT GAIN
I C (mA),COLLECT CURRENT
-50
I B =-20 0 A
-30
I B =-15 0 A
I B =-10 0 A
-20
I B =-5 0 A
-10
0
0
-10
-20
-30
-40
V CE (V),COLLECTOR-EMITTER VOLTAGE
C
E
L
-100
V CE (sat)
-10
10
E
100
J
E
I C =10 I B
1000
I C (mA),COLLECT CUTTENT
Bace-Emitter Saturation Voltage
Collector-Emitter Satruation Voltage
O
fT(MHz),CURRENT GAIN-BANDWIDTH PRODUCT
VBE(sat),VCE(sat),SATURATION VOLTAGE
R
T
V BE (sat)
IC
N
Static Characteristic
-1000
100
10
-10
-50
D
T
,. L
O
Vc E =-1V
C
-100
-1000
I C (mA),COLLECTOR CUTTENT
DC Current Gain
1000
Vc E =-6V
100
10
1
1
10
100
1000
I C (mA),COLLECTOR CURRENT
Current Gain Bandwidth Product
W
WEJ ELECTRONIC CO.
Http:// www.wej.cn
10000
E-mail:[email protected]