RoHS MMBT9012LT1 PNP EPITAXIAL SILICON TRANSISTOR SOT-23 1W OUTPUT AMPLIFIER OF PORTABLE 1 RADIOS IN CLASS B PUSH-PULL OPERATION 2 1. Complement to 9013G 2.4 1.3 0.95 0.95 2.9 1.9 High Total Power Dissipation Pc=225mW ABSOLUTE MAXIMUM RATINGS Collector-Base Voltage Collector-Emitter Voltage V CBO Emitter-Base Voltage V EBO V CEO R T Ic Collector Current o PD Collector Dissipation Ta=25 C* Tj Junction Temperature C E L Electrical Characteristics Parameter IC N Symbol Characteristic 1.BASE 2.EMITTER 3.COLLECTOR O T stg Symbol C 0.4 Collector Current :Ic=-500mA Storage Temperature D T ,. L O 3 Rating -40 V -20 V -5 V -500 mA 225 mW 150 O -55~150 O o MIN. TYP. MAX. Unit Condition V I C =-100 A I E =0 Collector-Emitter Breakdown Voltage# BV CEO -20 V I C =-1mA I B =0 Emitter-Base Breakdown Voltage BV EBO -5 V I E =-100 A I C =0 Collector -Base Cutoff Current I CBO -100 nA V CB =-25V, V C =0 Emitter-Base Cutoff Current I EBO -100 nA V CB =-3V, I C =0 DC Current Gain H FE1 64 DC Current Gain H FE2 30 Collector-Emitter Saturation Voltage V CE(sat) J E W C C (Ta=25 C) -40 E o (Ta=25 C) Unit BV CBO Collector-Base Breakdown Voltage Unit:mm 120 300 V CE =-1V, I C =-50mA V CE =-1V, I C =-500mA -0.18 -0.6 V I C =-500mA, I B =-50mA V V I C =-500mA, I B =-50mA Base-Emitter Saturation Voltage V BE(sat) -0.95 -1.2 Base-Emitter On Voltage V BE(on) -0.6 -0.67 -0.7 V C e =-1V, I C =-10mA o *Total Device Dissipation:FR=1X0.75X0.062 in Board Derate 25 C _ 300uS Duty cycle < _ 2% # Pulse Test: Pulse Width < DEVICE MARKING: 9012=J6 WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:[email protected] RoHS MMBT9012LT1 Typical Characteristics 1000 I B =- 300 A I B =-25 0 A -40 h FE ,DC CURRENT GAIN I C (mA),COLLECT CURRENT -50 I B =-20 0 A -30 I B =-15 0 A I B =-10 0 A -20 I B =-5 0 A -10 0 0 -10 -20 -30 -40 V CE (V),COLLECTOR-EMITTER VOLTAGE C E L -100 V CE (sat) -10 10 E 100 J E I C =10 I B 1000 I C (mA),COLLECT CUTTENT Bace-Emitter Saturation Voltage Collector-Emitter Satruation Voltage O fT(MHz),CURRENT GAIN-BANDWIDTH PRODUCT VBE(sat),VCE(sat),SATURATION VOLTAGE R T V BE (sat) IC N Static Characteristic -1000 100 10 -10 -50 D T ,. L O Vc E =-1V C -100 -1000 I C (mA),COLLECTOR CUTTENT DC Current Gain 1000 Vc E =-6V 100 10 1 1 10 100 1000 I C (mA),COLLECTOR CURRENT Current Gain Bandwidth Product W WEJ ELECTRONIC CO. Http:// www.wej.cn 10000 E-mail:[email protected]