RoHS 2SD602LT1 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR * Complement to MMBT2907ALT1 * Collector Dissipation: Pc(max)=225mW * Collector-Emitter Voltage :Vceo= 40V ABSOLUTE MAXIMUM RATINGS at Ta=25 Collector-Base Voltage Vcbo Rating Unit 75 1. 2.4 1.3 Vceo 40 V Emitter-Base Voltage Vebo 6 V Collector Current Ic 600 mA Collector Dissipation Ta=25 * PD 225 mW Junction Temperature Tj 150 Storage Temperature Tstg 0.95 2.9 1.9 Collector-Emitter Voltage IC -55-150 ELECTRICAL CHARACTERISTICS at Ta=25 Characteristic Symbol Min Collector-Base Breakdown Voltage BVcbo 75 Collector-Emitter BVceo 40 Breakdown Voltage# R T Emitter-Base Breakdown Voltage Emitter Cutoff Current Icex Collect Cutoff Current Icbo Collect Cutoff Current C E L Collect Cutoff Current DC Current Gain DC Current Gain DC Current Gain E DC Current Gain DC Current Gain J E W BVebo Icbo N Typ O 6 1.GATE 2.SO URCER 3.DRAIE V Iebo Max Unit C O 0.4 Symbol 0.95 Characteristic D T ,. L Unit:mm Test Conditions V Ic= 10uA Ie=0 V Ic= 10mA V Ie= 10uA Ic=0 10 nA Vce= 60V Veb=3V 10 nA Vcb= 60V Ie=0 10 nA Vcb= 60VIe=0 Ta=125 10 nA Vcb=3V Ic=0 Ib=0 Hfe1 35 Vce= 10V Ic= 0.1mA Hfe2 50 Vce= 10V Ic= 1mA Hfe3 75 Vce= 10V Ic= 10mA Hfe4 100 Hfe5 40 300 Vce= 10V Ic= 150mA Vce= 10V Ic= 500mA Collector-Emitter Saturation Voltage Vce(sat) 0.3 V Ic= 150mA Ib= 15mA Collector-Emitter Saturation Voltage Vce(sat) 1 V Ic= 500mA Ib= 50mA Base-Emitter Saturation Voltage Vbe(sat) 1.2 V Ic=150mA Ib= 15mA Base-Emitter Saturation Voltage Vbe(sat) 2 V Ic= 500mA Ib= 50mA Cob 8 PF Vcb=10V Ie=0 f=1MHz Output Base Capacitance Current Gain-Bandwidth Product fT 0.6 300 Vce= 20V Ic= 20mA f=100MHz * Total Device Dissipation : FR=1X0.75X0.062in Board,Derate 25 . # Pulse Test : Pulse Width DEVICE MARKING: MHz 300uS,Duty cycle 2% 2SD602LT1=1P WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:[email protected]