WINNERJOIN MMBT3906LT1

RoHS
MMBT3906LT1
SOT-23 TRANSISTOR
SOT-23
Dimensions(Unit:mm)
2.3±0.2
GENERAL PURPOSE TRANSISTOR
1.3±0.2
0.5Ref.
0.97Ref.
1
PNP Epitaxial Silicon Transistor
0.38Ref.
MINO.1
Parameter
Symbol
Collector-Base Voltage
Collector-Emitter Voltage
V CBO
IC
Emitter-Base Voltage
V EBO
Collector Current
Ic
V CEO
R
T
Pc
Collector Dissipation
Tj
Junction Temperature
T stg
Storage Temperature
C
E
L
Electrical Characteristics
Parameter
Symbol
Rating
N
O
2A
Marking
C
0.01-0.10
Tolerance:0.1mm
Absolute Maximum Ratings
0.4
3
0.124±0.10
1.9
Collector-Emitter Voltage: V CEO =-40V
2.9±0.2
2
Collector Dissipation:Pc=225mW
D
T
,. L
O
0.5Ref.
Complementary Pair with MMBT3904LT1.
1.EMITTER
2.BASE
3.COLLECTOR
o
(Ta=25 C)
Unit
-40
V
-40
V
-5
V
-200
mA
225
mW
O
150
O
-50~150
C
C
o
(Ta=25 C)
MIN. TYP. MAX. Unit
Condition
BV CEO
-40
V
I C =-1mA I B =0
Collector-Base Breakdown Voltage
BV CBO
-40
V
I C =-10 A I E =0
Emitter-Base Breakdown Voltage
BV EBO
-5
V
I E =-10 A I C =0
Collector Cut-off Current
I CEO
-50
nA
V CB =-30V, V EB =-3V
Emitter-Base Cutoff Current
I EBO
-50
nA
V CB =-3V, I C =0
DC Current Gain
h FE1
60
V CE =-1V, I C =-0.1mA
h FE2
80
V CE =-1V, I C =-1mA
h FE3
100
h FE4
60
V CE =-1V, I C =-50mA
DC Current Gain
h FE5
30
V CE =-1V, I C =-100mA
Collector-Emitter Saturation Voltage
V CE(sat)
-0.4
V
I C =-50mA, I B =-5mA
Collector-Emitter Saturation Voltage
V CE(sat)
-0.25
V
I C =-10mA, I B =-1mA
Base-Emitter Saturation Voltage
V BE(sat)
-0.95
V
I C =-50mA, I B =-5mA
Base-Emitter Saturation Voltage
V BE(sat)
-0.85
V
I C =-10mA, I B =-1mA
Output Capacitance
C ob
4.5
PF
V CE =-5V, I C =0,f=1MHz
Current Gain-Bandwidth Product
fT
Collector-Emitter Breakdown Voltage
J
E
DC Current Gain
DC Current Gain
E
DC Current Gain
W
300
V CE =-1V, I C =-10mA
250
MHz V CE =-20V, I C =-10mA,f=100MHz
o
Total Device Dissipation:FR=1X0.75X0.062 in Board Derate 25 C
Pulse Test: Pulse Width 300uS Duty cycle 2%
WEJ ELECTRONIC CO.
Http:// www.wej.cn
E-mail:[email protected]
RoHS
MMBT3906LT1
h FE ,DC CURRENT GAIN (NORMALIZED)
Typical Characteristics
2.0
。
T J =25 C
V CE =1.0V
。
+25 C
1.0
0.7
。
-55 C
0.5
0.3
IC
0.2
0.1
0.1
0.2
0.3
0.5
0.7
1.0
2.0
3.0
5.0
N
7.0
10
20
C
30
50
70
100
I C, COLLECTOR CUTTENT (mA)
DC Current Gain
1.0
R
T
C
E
L
。
V,VOLTAGE (VOLTS)
E
0.8
0.6
O
V BE(SAT) @I C /I B =10
T J =25 C
J
E
D
T
,. L
O
V BE(SAT) @V CE =1.0V
0.4
Vc E(SAT) @I C /I B =10
0.2
0
1.0
2.0 5.0
10
20
50
100
200
I C, COLLECTOR CUTTENT (mA)
“On” Voltages
W
WEJ ELECTRONIC CO.
Http:// www.wej.cn
E-mail:[email protected]
200