RoHS MMBT3906LT1 SOT-23 TRANSISTOR SOT-23 Dimensions(Unit:mm) 2.3±0.2 GENERAL PURPOSE TRANSISTOR 1.3±0.2 0.5Ref. 0.97Ref. 1 PNP Epitaxial Silicon Transistor 0.38Ref. MINO.1 Parameter Symbol Collector-Base Voltage Collector-Emitter Voltage V CBO IC Emitter-Base Voltage V EBO Collector Current Ic V CEO R T Pc Collector Dissipation Tj Junction Temperature T stg Storage Temperature C E L Electrical Characteristics Parameter Symbol Rating N O 2A Marking C 0.01-0.10 Tolerance:0.1mm Absolute Maximum Ratings 0.4 3 0.124±0.10 1.9 Collector-Emitter Voltage: V CEO =-40V 2.9±0.2 2 Collector Dissipation:Pc=225mW D T ,. L O 0.5Ref. Complementary Pair with MMBT3904LT1. 1.EMITTER 2.BASE 3.COLLECTOR o (Ta=25 C) Unit -40 V -40 V -5 V -200 mA 225 mW O 150 O -50~150 C C o (Ta=25 C) MIN. TYP. MAX. Unit Condition BV CEO -40 V I C =-1mA I B =0 Collector-Base Breakdown Voltage BV CBO -40 V I C =-10 A I E =0 Emitter-Base Breakdown Voltage BV EBO -5 V I E =-10 A I C =0 Collector Cut-off Current I CEO -50 nA V CB =-30V, V EB =-3V Emitter-Base Cutoff Current I EBO -50 nA V CB =-3V, I C =0 DC Current Gain h FE1 60 V CE =-1V, I C =-0.1mA h FE2 80 V CE =-1V, I C =-1mA h FE3 100 h FE4 60 V CE =-1V, I C =-50mA DC Current Gain h FE5 30 V CE =-1V, I C =-100mA Collector-Emitter Saturation Voltage V CE(sat) -0.4 V I C =-50mA, I B =-5mA Collector-Emitter Saturation Voltage V CE(sat) -0.25 V I C =-10mA, I B =-1mA Base-Emitter Saturation Voltage V BE(sat) -0.95 V I C =-50mA, I B =-5mA Base-Emitter Saturation Voltage V BE(sat) -0.85 V I C =-10mA, I B =-1mA Output Capacitance C ob 4.5 PF V CE =-5V, I C =0,f=1MHz Current Gain-Bandwidth Product fT Collector-Emitter Breakdown Voltage J E DC Current Gain DC Current Gain E DC Current Gain W 300 V CE =-1V, I C =-10mA 250 MHz V CE =-20V, I C =-10mA,f=100MHz o Total Device Dissipation:FR=1X0.75X0.062 in Board Derate 25 C Pulse Test: Pulse Width 300uS Duty cycle 2% WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:[email protected] RoHS MMBT3906LT1 h FE ,DC CURRENT GAIN (NORMALIZED) Typical Characteristics 2.0 。 T J =25 C V CE =1.0V 。 +25 C 1.0 0.7 。 -55 C 0.5 0.3 IC 0.2 0.1 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 N 7.0 10 20 C 30 50 70 100 I C, COLLECTOR CUTTENT (mA) DC Current Gain 1.0 R T C E L 。 V,VOLTAGE (VOLTS) E 0.8 0.6 O V BE(SAT) @I C /I B =10 T J =25 C J E D T ,. L O V BE(SAT) @V CE =1.0V 0.4 Vc E(SAT) @I C /I B =10 0.2 0 1.0 2.0 5.0 10 20 50 100 200 I C, COLLECTOR CUTTENT (mA) “On” Voltages W WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:[email protected] 200