XINDEYI UD0008

UD0008
N-Ch 100V Fast Switching MOSFETs
General Description
Product Summery
The UD0008 is the highest performance trench
N-ch MOSFETs with extreme high cell density ,
which provide excellent RDSON and gate charge
for most of the synchronous buck converter
applications .
The UD0008 meet the RoHS and Green Product
requirement with full function reliability approved.
BVDSS
100V
RDS(ON)
ID
310mΩ
5.4A
Applications
z High Frequency Point-of-Load Synchronous
Buck Converter
z Networking DC-DC Power System
Features
z Power Tool Application
TO252 Pin Configuration
z Advanced high cell density Trench technology
z Super Low Gate Charge
z Excellent Cdv/dt effect decline
z Green Device Available
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TC=25℃
ID@TC=100℃
ID@TA=25℃
ID@TA=70℃
IDM
Rating
Units
Drain-Source Voltage
100
V
Gate-Source Voltage
±20
V
1
5.4
A
1
3.4
A
1
1.7
A
1
1.3
A
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
11
A
3
20.8
W
3
Total Power Dissipation
2
W
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
PD@TC=25℃
PD@TA=25℃
Pulsed Drain Current
2
Total Power Dissipation
Thermal Data
Symbol
Parameter
Max.
Unit
RθJA
Thermal Resistance Junction-ambient 1
Typ.
---
62
℃/W
RθJC
Thermal Resistance Junction-Case1
---
6
℃/W
1
UD0008
N-Ch 100V Fast Switching MOSFETs
Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
Symbol
BVDSS
Parameter
Conditions
Drain-Source Breakdown Voltage
△BVDSS/△TJ BVDSS Temperature Coefficient
RDS(ON)
VGS(th)
Static Drain-Source On-Resistance2
Gate Threshold Voltage
Min.
Typ.
Max.
Unit
100
---
---
V
Reference to 25℃ , ID=1mA
---
0.0672
---
V/℃
VGS=10V , ID=5A
---
260
310
VGS=4.5V , ID=3A
---
270
320
1.0
1.5
2.5
V
---
-4.12
---
mV/℃
VDS=80V , VGS=0V , TJ=25℃
---
---
10
VDS=80V , VGS=0V , TJ=55℃
---
---
100
VGS=0V , ID=250uA
VGS=VDS , ID =250uA
mΩ
△VGS(th)
VGS(th) Temperature Coefficient
IDSS
Drain-Source Leakage Current
IGSS
Gate-Source Leakage Current
VGS=±20V , VDS=0V
---
---
±100
nA
gfs
Forward Transconductance
VDS=5V , ID=3A
---
5.4
---
S
Rg
Gate Resistance
VDS=0V , VGS=0V , f=1MHz
---
2.5
5
Ω
Qg
Total Gate Charge (10V)
---
9.6
13.4
Qgs
Gate-Source Charge
---
1.83
2.56
Qgd
Gate-Drain Charge
---
1.85
2.6
2.8
Td(on)
VDS=80V , VGS=10V , ID=5A
Turn-On Delay Time
uA
nC
---
1.4
Rise Time
VDD=50V , VGS=10V , RG=3.3Ω
---
30.6
55
Turn-Off Delay Time
ID=5A
---
11.2
22
Fall Time
---
6
12
Ciss
Input Capacitance
---
508
711
Coss
Output Capacitance
---
29
41
Crss
Reverse Transfer Capacitance
---
16.4
23
Min.
Typ.
Max.
---
---
5.4
A
---
---
11
A
---
---
1.2
V
---
20
---
nS
---
19
---
nC
Tr
Td(off)
Tf
VDS=15V , VGS=0V , f=1MHz
ns
pF
Diode Characteristics
Symbol
Parameter
Conditions
1,4
IS
Continuous Source Current
ISM
Pulsed Source Current2,4
VSD
Diode Forward Voltage2
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VG=VD=0V , Force Current
VGS=0V , IS=1A , TJ=25℃
IF=5A , dI/dt=100A/µs , TJ=25℃
Note :
2
1.The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%
3.The power dissipation is limited by 150℃ junction temperature
4.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
2
Unit
UD0008
N-Ch 100V Fast Switching MOSFETs
Typical Characteristics
8.0
VGS=10V
VGS=7V
ID Drain Current (A)
6.0
VGS=5V
VGS=4.5V
4.0
VGS=3V
2.0
0.0
0
1
2
3
4
5
VDS ,Drain-to-Source Voltage (V)
Fig.1 Typical Output Characteristics
Fig.2 On-Resistance vs. Gate-Source
IS Source Current(A)
1.5
1
TJ=150℃
TJ=25℃
0.5
0
0.00
0.25
0.50
0.75
1.00
VSD , Source-to-Drain Voltage (V)
Fig.3 Forward Characteristics Of Reverse
Fig.4 Gate-Charge Characteristics
2.5
Normalized On Resistance
1.8
2.0
Normalized VGS(th) (V)
1.4
1.5
1
0.6
1.0
0.2
0.5
-50
0
50
100
150
-50
TJ ,Junction Temperature (℃ )
0
50
100
T J , Junction Temperature (℃)
Fig.5 Normalized VGS(th) vs. TJ
Fig.6 Normalized RDSON vs. TJ
3
150
UD0008
N-Ch 100V Fast Switching MOSFETs
1000
F=1.0MHz
Capacitance (pF)
Ciss
100
Coss
Crss
10
1
5
9
13
17
21
25
VDS Drain to Source Voltage (V)
Fig.7 Capacitance
Fig.8 Safe Operating Area
Normalized Thermal Response (RθJC)
1
DUTY=0.5
0.2
0.1
0.1
0.05
P DM
T ON
T
0.02
D = TON/T
0.01
TJpeak = TC+P DMXRθJC
SINGLE
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t , Pulse Width (s)
Fig.9 Normalized Maximum Transient Thermal Impedance
Fig.10 Switching Time Waveform
Fig.11 Gate Charge Waveform
4
10