Unitpower UD50N03 N-Ch 30V Fast Switching MOSFETs GeneralDescription Description General Product Summery Product Summery The UD50N03 is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . BVDSS RDSON ID 30V 12mΩ 51A Applications Applications The UD50N03 meet the RoHS and Green Product requirement 100% EAS guaranteed with full function reliability approved. High Frequency Point-of-Load Synchronous Buck Converter for MB/NB/UMPC/VGA Networking DC-DC Power System Load Switch Features Features TO252 PinPin Configuration TO252 Configuration Advanced high cell density Trench technology Super Low Gate Charge Excellent CdV/dt effect decline 100% EAS Guaranteed Green Device Available D Absolute Maximum Ratings Absolute Maximum Ratings G S Symbol Parameter Rating Units VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage ±20 V ID@TC=25℃ Continuous Drain Current, VGS @ 10V 1 51 A ID@TC=100℃ Continuous Drain Current, VGS @ 10V1 30 A ID@TA=25℃ Continuous Drain Current, VGS @ 10V 1 11 A ID@TA=70℃ Continuous Drain Current, VGS @ 10V 1 9 A IDM Pulsed Drain Current 112 A EAS Single Pulse Avalanche Energy 53 mJ IAS Avalanche Current PD@TC=25℃ 2 3 22 A Total Power Dissipation 4 37.5 W PD@TA=25℃ Total Power Dissipation 4 2.42 W TSTG Storage Temperature Range -55 to 175 ℃ TJ Operating Junction Temperature Range -55 to 175 ℃ Thermal Data Thermal Data Symbol Parameter RθJA Thermal Resistance Junction-Ambient RθJC Thermal Resistance Junction-Case 1 1 1 Typ. Max. Unit --- 62 ℃/W --- 4 ℃/W Unitpower UD50N03 N-Ch 30V Fast Switching MOSFETs Electrical ℃, unless ElectricalCharacteristics Characteristics(T(TJ=25 , unlessotherwise otherwisenoted) noted) J=25 Symbol BVDSS Parameter △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) VGS(th) Min. Typ. Max. Unit VGS=0V , ID=250uA 30 --- --- V Reference to 25℃ , ID=1mA --- 0.0193 --- V/℃ VGS=10V , ID=30A --- 10 12 mΩ VGS=4.5V , ID=15A --- 15 18 VGS=VDS , ID =250uA 1.2 1.5 2.5 V --- -3.97 --- mV/℃ VDS=24V , VGS=0V , TJ=25℃ --- --- 1 uA Conditions Drain-Source Breakdown Voltage Static Drain-Source On-Resistance 2 Gate Threshold Voltage △VGS(th) VGS(th) Temperature Coefficient IDSS Drain-Source Leakage Current VDS=24V , VGS=0V , TJ=55℃ --- --- 5 IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=5V , ID=30A --- 34 --- S Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 1.8 3.6 Qg Total Gate Charge (4.5V) VDS=15V , VGS=4.5V , ID=15A --- 9.8 13.7 nC Qgs Gate-Source Charge --- 4.2 5.88 Qgd Gate-Drain Charge --- 3.6 5.0 Td(on) Turn-On Delay Time --- 4 8.0 --- 8 14 --- 31 62 Tr Td(off) Tf VDD=15V , VGS=10V , RG=3.3Ω ID=15A Rise Time Turn-Off Delay Time Fall Time ns --- 4 8 --- 940 1316 Output Capacitance --- 131 183 Reverse Transfer Capacitance --- 109 153 Min. Typ. Max. Unit 24.6 --- --- mJ Min. Typ. Max. Unit Ciss Input Capacitance Coss Crss VDS=15V , VGS=0V , f=1MHz pF Guaranteed Avalanche Characteristics Guaranteed Avalanche Characteristics Symbol EAS Parameter Conditions Single Pulse Avalanche Energy 5 VDD=25V , L=0.1mH , IAS=15A Diode Characteristics Diode Characteristics Symbol Parameter IS Continuous Source Current ISM Pulsed Source Current2,6 VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge 2 Conditions 1,6 VG=VD=0V , Force Current --- --- 43 A --- --- 112 A VGS=0V , IS=1A , TJ=25℃ --- --- 1 V IF=30A , dI/dt=100A/µs , TJ=25℃ --- 8.5 --- nS --- 2.2 --- nC Note : 1.The data tested by surface mounted on a 1 inch 2 FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The EAS data shows Max. rating . The test condition is V DD=25V,VGS=10V,L=0.1mH,I AS=22A 4.The power dissipation is limited by 175 ℃ junction temperature 5.The Min. value is 100% EAS tested guarantee. 6.The data is theoretically the same as I D and IDM , in real applications , should be limited by total power dissipation. 2 Unitpower UD50N03 N-Ch 30V Fast Switching MOSFETs Typical Characteristics Typical Characteristics 120 20 18 VGS=5V 80 RDSON (mΩ) ID Drain Current (A) ID=30A VGS=10V VGS=7V 100 VGS=4.5V 60 15 40 VGS=3V 13 20 0 0 0.5 1 1.5 2 2.5 VDS , Drain-to-Source Voltage (V) 10 3 4 Fig.1 Fig.1 Typical Typical Output Output Characteristics Characteristics 6 VGS (V) 8 10 Fig.2 G-S Voltage Fig.2 On-Resistance On-Resistance vs. vs. Gate-Source 12 IS Source Current(A) 10 8 6 TJ=175℃ TJ=25℃ 4 2 0 0 0.3 0.6 0.9 VSD , Source-to-Drain Voltage (V) 1.2 Fig.4 Gate-Charge Characteristics Fig.4 Gate-Charge Characteristics Fig.3 Forward Characteristics of Reverse diode Fig.3 Forward Characteristics of Reverse 2.0 Normalized On Resistance Normalized VGS(th) 1.5 1.5 1 1.0 0.5 0.5 0 -50 25 100 TJ ,Junction Temperature ( ℃) -50 175 25 100 TJ , Junction Temperature (℃) Fig.6 Normalized RDSON vs. TJ Fig.6 Normalized RDSON vs. TJ Fig.5 Normalized VGS(th) vs. TJ Fig.5 Normalized VGS(th) vs. TJ 3 175 Unitpower UD50N03 N-Ch 30V Fast Switching MOSFETs 10000 1000.00 F=1.0MHz 10us Ciss 1000 100us 10.00 1ms ID (A) Capacitance (pF) 100.00 10ms 100ms DC 1.00 Coss 100 Crss 0.10 TC=25℃ Single Pulse 0.01 10 1 5 9 13 17 VDS Drain to Source Voltage(V) 21 0.1 25 1 10 100 1000 VDS (V) Fig.7 Capacitance Fig.7 Capacitance Fig.8 Safe Safe Operating Operating Area Area Fig.8 Normalized Thermal Response (R θJC) 1 DUTY=0.5 0.2 0.1 0.01 0.1 0.05 0.02 0.01 P DM SINGLE T ON T D = TON/T TJpeak = TC+P DMXRθJC 0.001 0.00001 0.0001 0.001 0.01 0.1 1 t , Pulse Width (s) Fig.9 Normalized Normalized Maximum Maximum Transient Transient Thermal Thermal Impedance Impedance Fig.9 EAS= VDS 90% BVDSS Td(on) Tr Ton Td(off) BVDSS BVDSS-VDD VDD IAS 10% VGS 1 L x I AS2 x 2 Tf VGS Toff Fig.11 Unclamped Inductive Switching Waveform Fig.11 Unclamped Inductive Switching Waveform Fig.11 Unclamped Inductive Switching Waveform FFFwaveform Fig.10 Switching Time Waveform Fig.10 Switching Time Waveform 4