UM3801 N-Ch and P-Ch Fast Switching MOSFETs General Description Product Summery The UM3801 is the highest performance trench N-ch and P-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . The UM3801 meet the RoHS and Green Product requirement 100% EAS guaranteed with full function reliability approved. BVDSS RDS(ON) ID 30V 27mΩ 6A -30V 32mΩ -5.7A Applications z High Frequency Point-of-Load Synchronous Buck Converter for MB/NB/UMPC/VGA Features z Networking DC-DC Power System z CCFL Back-light Inverter z Advanced high cell density Trench technology SOP8 Pin Configuration z Super Low Gate Charge z Excellent CdV/dt effect decline z 100% EAS Guaranteed z Green Device Available Absolute Maximum Ratings Rating Symbol Parameter N-Ch P-Ch Units VDS Drain-Source Voltage 30 -30 V VGS Gate-Source Voltage ID@TA=25℃ ID@TA=70℃ IDM ±20 ±20 V 1 6 -5.7 A 1 4.8 -4.5 A 24 -24 A Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 2 3 EAS Single Pulse Avalanche Energy 26.6 110 mJ IAS Avalanche Current 12.7 -30 A 4 PD@TA=25℃ Total Power Dissipation 1.5 1.5 W TSTG Storage Temperature Range -55 to 150 -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 -55 to 150 ℃ Thermal Data Symbol Parameter Max. Unit RθJA Thermal Resistance Junction-Ambient 1 Typ. --- 85 ℃/W RθJC Thermal Resistance Junction-Case1 --- 60 ℃/W 1 UM3801 N-Ch and P-Ch Fast Switching MOSFETs N-Channel Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Conditions Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) VGS(th) Static Drain-Source On-Resistance2 Gate Threshold Voltage Min. Typ. Max. Unit VGS=0V , ID=250uA 30 --- --- V Reference to 25℃ , ID=1mA --- 0.023 --- V/℃ VGS=10V , ID=6A --- 22 27 VGS=4.5V , ID=4A --- 32 40 1.0 1.5 2.5 V --- -4.2 --- mV/℃ VDS=24V , VGS=0V , TJ=25℃ --- --- 1 VDS=24V , VGS=0V , TJ=55℃ --- --- 5 VGS=VDS , ID =250uA mΩ △VGS(th) VGS(th) Temperature Coefficient IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=5V , ID=6A --- 12.8 --- S Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 2.3 4.6 Ω Qg Total Gate Charge (4.5V) --- 5 --- Qgs Gate-Source Charge --- 1.11 --- Qgd Gate-Drain Charge --- 2.61 --- Td(on) VDS=20V , VGS=4.5V , ID=6A nC --- 7.7 --- Rise Time VDD=12V , VGS=10V , RG=3.3Ω --- 46 --- Turn-Off Delay Time ID=6A --- 11 --- Fall Time --- 3.6 --- Ciss Input Capacitance --- 416 --- Coss Output Capacitance --- 62 --- Crss Reverse Transfer Capacitance --- 51 --- Min. Typ. Max. Unit 6 --- --- mJ Min. Typ. Max. Unit Tr Td(off) Tf Turn-On Delay Time uA VDS=15V , VGS=0V , f=1MHz ns pF Guaranteed Avalanche Characteristics Symbol EAS Parameter Conditions 5 Single Pulse Avalanche Energy VDD=25V , L=0.1mH , IAS=6A Diode Characteristics Symbol Parameter Conditions 1,6 IS Continuous Source Current ISM Pulsed Source Current2,6 VSD 2 Diode Forward Voltage VG=VD=0V , Force Current VGS=0V , IS=1A , TJ=25℃ --- --- 6 A --- --- 24 A --- --- 1.2 V Note : 2 1.The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V,L=0.1mH,IAS=12.7A 4.The power dissipation is limited by 150℃ junction temperature 5.The Min. value is 100% EAS tested guarantee. 6.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. 2 UM3801 N-Ch and P-Ch Fast Switching MOSFETs P-Channel Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Conditions Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) VGS(th) Static Drain-Source On-Resistance2 Gate Threshold Voltage Min. Typ. Max. Unit VGS=0V , ID=-250uA -30 --- --- V Reference to 25℃ , ID=-1mA --- -0.021 --- V/℃ VGS=-10V , ID=-6A --- 26 32 VGS=-4.5V , ID=-4A --- 45 56 -1.0 -1.5 -2.5 V --- -4.2 --- mV/℃ VDS=-24V , VGS=0V , TJ=25℃ --- --- 1 VDS=-24V , VGS=0V , TJ=55℃ --- --- 5 VGS=VDS , ID =-250uA mΩ △VGS(th) VGS(th) Temperature Coefficient IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=-5V , ID=-6A --- 12.6 --- S Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz 15 30 Ω Qg Total Gate Charge (-4.5V) --- 9.8 --- Qgs Gate-Source Charge --- 2.2 --- Qgd Gate-Drain Charge --- 3.4 --- Td(on) VDS=-20V , VGS=-4.5V , ID=-6A nC --- 16.4 --- Rise Time VDD=-24V , VGS=-10V , RG=3.3Ω, --- 20.2 --- Turn-Off Delay Time ID=-1A --- 55 --- Fall Time --- 10 --- Ciss Input Capacitance --- 930 --- Coss Output Capacitance --- 148 --- Crss Reverse Transfer Capacitance --- 115 --- Min. Typ. Max. Unit 28 --- --- mJ Min. Typ. Max. Unit Tr Td(off) Tf Turn-On Delay Time uA VDS=-15V , VGS=0V , f=1MHz ns pF Guaranteed Avalanche Characteristics Symbol EAS Parameter Conditions 5 Single Pulse Avalanche Energy VDD=-25V , L=0.1mH , IAS=-15A Diode Characteristics Symbol Parameter Conditions 1,6 IS Continuous Source Current ISM Pulsed Source Current2,6 VSD Diode Forward Voltage 2 VG=VD=0V , Force Current VGS=0V , IS=-1A , TJ=25℃ --- --- -5.7 A --- --- -24 A --- --- -1.2 V Note : 2 1.The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The EAS data shows Max. rating . The test condition is VDD=-25V,VGS=-10V,L=0.1mH,IAS=-30A 4.The power dissipation is limited by 150℃ junction temperature 5.The Min. value is 100% EAS tested guarantee. 6.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. 3 UM3801 N-Ch and P-Ch Fast Switching MOSFETs N-Channel Typical Characteristics 65 28 ID=6A VGS=10V 20 VGS=7V 50 RDSON (mΩ) ID Drain Current (A) 24 VGS=5V 16 VGS=4.5V 12 35 8 VGS=3V 4 20 0 0 0.5 1 1.5 2 2 VDS , Drain-to-Source Voltage (V) Fig.1 Typical Output Characteristics 4 6 VGS (V) 8 10 Fig.2 On-Resistance vs. Gate-Source 10 6 VGS Gate to Source Voltage (V) IS Source Current(A) VDS=20V ID=6A 7.5 4 TJ=150℃ 2 TJ=25℃ 5 2.5 0 0.00 0 0.25 0.50 0.75 0 1.00 VSD , Source-to-Drain Voltage (V) Fig.3 Forward Characteristics Of Reverse 5 7.5 QG , Total Gate Charge (nC) 10 Fig.4 Gate-Charge Characteristics 1.8 Normalized On Resistance 1.8 1.4 1.4 Normalized VGS(th) 2.5 1.0 1 0.6 0.6 0.2 0.2 -50 0 50 100 150 -50 TJ ,Junction Temperature (℃ ) 0 50 100 TJ , Junction Temperature (℃) Fig.5 Normalized VGS(th) vs. TJ Fig.6 Normalized RDSON vs. TJ 4 150 UM3801 N-Ch and P-Ch Fast Switching MOSFETs 1000 100.00 F=1.0MHz 100us 10.00 1ms 100 10ms ID (A) Capacitance (pF) Ciss Coss 1.00 100ms Crss 0.10 o DC TA=25 C Single Pulse 10 1 5 9 13 17 21 25 VDS Drain to Source Voltage (V) 0.01 0.01 0.1 Fig.7 Capacitance 1 10 VDS (V) 100 Fig.8 Safe Operating Area Normalized Thermal Response (RθJA) 1 DUTY=0.5 0.2 0.1 0.1 0.05 0.01 P DM 0.01 T ON T D = TON/T TJpeak = TA+P DMXRθJA SINGLE 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 t , Pulse Width (s) Fig.9 Normalized Maximum Transient Thermal Impedance Fig.10 Switching Time Waveform Fig.11 Unclamped Inductive Switching Waveform 5 UM3801 N-Ch and P-Ch Fast Switching MOSFETs P-Channel Typical Characteristics 50 24 ID=-6A -ID Drain Current (A) 20 VGS=-10V VGS=-7V 16 40 RDSON (mΩ) VGS=-5V VGS=-4.5V 12 8 30 VGS=-3V 4 0 20 0 0.5 1 1.5 -VDS , Drain-to-Source Voltage (V) 2 2 Fig.1 Typical Output Characteristics 4 6 -VGS (V) 8 10 Fig.2 On-Resistance v.s Gate-Source 12 10 VDS=-20V -VGS Gate to Source Voltage (V) -IS Source Current(A) 10 8 TJ=150℃ 6 TJ=25℃ 4 2 0 0.2 0.4 0.6 0.8 ID=-6A 8 6 4 2 0 0 1 Fig.3 Forward Characteristics Of Reverse 10 15 20 Fig.4 Gate-Charge Characteristics 2.0 Normalized On Resistance 1.5 Normalized -VGS(th) 5 QG , Total Gate Charge (nC) -VSD , Source-to-Drain Voltage (V) 1.5 1 1.0 0.5 0.5 0 -50 0 50 100 TJ ,Junction Temperature ( ℃) -50 150 0 50 100 TJ , Junction Temperature (℃) Fig.5 Normalized VGS(th) v.s TJ Fig.6 Normalized RDSON v.s TJ 6 150 UM3801 N-Ch and P-Ch Fast Switching MOSFETs 100.00 F=1.0MHz 1000 100us 10.00 Ciss 1ms 10ms -ID (A) Capacitance (pF) 10000 1.00 Coss 100ms 100 Crss 0.10 o DC TA=25 C Single Pulse 0.01 0.01 10 1 5 9 13 17 -VDS Drain to Source Voltage(V) 21 25 0.1 1 10 -VDS (V) 100 Fig.8 Safe Operating Area Fig.7 Capacitance Normalized Thermal Response (RθJA) 1 DUTY=0.5 0.2 0.1 0.1 0.05 0.01 P DM 0.01 T ON T D = TON/T TJpeak = TA+P DMXRθJA SINGLE 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 t , Pulse Width (s) Fig.9 Normalized Maximum Transient Thermal Impedance Fig.10 Switching Time Waveform Fig.11 Unclamped Inductive Switching Waveform 7