ACE1543B P-Channel Enhancement Mode Field Effect Transistor Description This P-Channel enhancement mode power FETs are produced with high cell density, DMOS trench technology, which is especially used to minimize on-state resistance. This device is particularly suited for low voltage application such as portable equipment, power management and other battery powered circuits, and low in-line power loss are needed in a very small outline surface mount package. Features VDS(V) =-30V ID=-4.5A RDS(ON)=68mΩ @ VGS=-10V RDS(ON)=83mΩ @ VGS=-4.5V High density cell design for low RDS(ON) Absolute Maximum Ratings Parameter Symbol Max Unit Drain-Source Voltage VDSS -30 V Gate-Source Voltage VGSS ±20 V Continuous Drain Current * AC TA=25℃ TA=70℃ Pulsed Drain Current * B Power Dissipation TA=25℃ ID -4.5 -3.6 IDM -20 PD 2 Operating Junction Temperature / Storage Temperature Range TJ/TSTG -55/150 A A W O C Packaging Type SOT-223 VER 1.2 1 ACE1543B P-Channel Enhancement Mode Field Effect Transistor Ordering information ACE1543B XX + H Halogen - free Pb - free XM : SOT-223 Electrical Characteristics TA=25℃, unless otherwise specified. Parameter Symbol Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage V(BR)DSS VGS=0V, ID=-250 uA -30 -34 VGS(th) VDS=VGS, IDS=-250uA -1 -1.4 Gate Leakage Current Zero Gate Voltage Drain Current IGSS VDS=0V,VGS=±20V 100 nA IDSS VDS=-30V, VGS=0V -1 uA Drain-Source On-Resistance RDS(ON) Forward Transconductance Diode Forward Voltage V -3 VGS=-10V, ID=-6A 48 68 VGS=-4.5V, ID=-4A 63 83 gfs VDS=-5V,ID=-6A 12 S VSD ISD=-1A, VGS=0V -0.81 V mΩ Switching Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-On Time td(on) Turn-Off Time td(off) VDS=-15V, VGS=-10V, ID=-4.9A VGS=-10V, RGEN=6Ω, VDS=-15V, RL=15Ω 18.3 23.8 2.4 3.2 3.1 4.1 12.4 24.8 41.1 82.2 nC nS Dynamic Input Capacitance Ciss Output Capacitance REVERSE Transfer Capacitance Coss 971.5 VGS=0V, VDS=-15V, f=1MHz Crss 235.1 pF 82.7 Note: 2 1. The value of RθJA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value in any given application depends on the user's specific board design. 2. Repetitive rating, pulse width limited by junction temperature. 3. The current rating is based on the t≤ 10s junction to ambient thermal resistance rating. VER 1.2 2 ACE1543B P-Channel Enhancement Mode Field Effect Transistor Typical Performance Characteristics VER 1.2 3 ACE1543B P-Channel Enhancement Mode Field Effect Transistor Packing Information SOT-223 Units: mm VER 1.2 4 ACE1543B P-Channel Enhancement Mode Field Effect Transistor Notes ACE does not assume any responsibility for use as critical components in life support devices or systems without the express written approval of the president and general counsel of ACE Electronics Co., LTD. As sued herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and shoes failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ACE Technology Co., LTD. http://www.ace-ele.com/ VER 1.2 5