ACE8212B Common Drain N-Channel Enhancement Mode Field Effect Transistor with ESD Description The ACE8212B uses advanced trench technology to provide excellent RDS(ON) and low gate charge. They offer operation over a wide gate drive range from 1.8V to 12V. It is ESD protected. This device is suitable for use as a uni-directional or bi-directional load switch, facilitated by its common-drain configuration. Features VDS(V)=20V ID=8A (VGS=10V) TSSOP-8 RDS(ON)<13 mΩ (VGS=10V) RDS(ON)<14 mΩ (VGS=4.5V) RDS(ON)<19 mΩ (VGS=2.5V) RDS(ON)<27 mΩ (VGS=1.8V) DFN2*5 RDS(ON)<13 mΩ (VGS=10V) RDS(ON)<16 mΩ (VGS=4.5V) RDS(ON)<22 mΩ (VGS=2.5V) RDS(ON)<35 mΩ (VGS=1.8V) ESD Protected: 2000V Absolute Maximum Ratings Parameter Symbol Max Unit Drain-Source Voltage VDSS 20 V Gate-Source Voltage VGSS ±12 V Continuous Drain Current *AC TA=25℃ TA=70℃ Pulsed Drain Current TSSOP-8 Power Dissipation DFN2*5 ID IDM TA=25℃ TA=70℃ TA=25℃ TA=70℃ 8 6.4 30 A A 1.5 PD 1 1.6 W 1 Operating Junction Temperature / Storage Temperature Range TJ/TSTG -55/150 O C VER 1.2 1 ACE8212B Common Drain N-Channel Enhancement Mode Field Effect Transistor with ESD Packaging Type TSSOP-8 DFN2*5 Ordering information ACE8212B XX + H Halogen - free Pb - free TM : TSSOP-8 JN : DFN2*5 VER 1.2 2 ACE8212B Common Drain N-Channel Enhancement Mode Field Effect Transistor with ESD Electrical Characteristics TA=25℃, unless otherwise noted. Parameter Symbol Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage V(BR)DSS VGS=0V, ID=250 uA 20 Gate Threshold Voltage VGS(th) VDS=VGS, IDS=250uA 0.5 Gate Leakage Current Zero Gate Voltage Drain Current Maximum Body-Diode Continuous Current IGSS VDS=0V,VGS=±12V 10 uA IDSS VDS=20V, VGS=0V 1 uA 2.4 A Drain-Source On-Resistance (TSSOP-8) Drain-Source On-Resistance (DFN2*5) V 0.72 IS RDS(ON) RDS(ON) 1 VGS=10V, ID=8A 8.2 13 VGS=4.5V, ID=5A 9.2 14 VGS=2.5V, ID=4A 12 19 VGS=1.8V, ID=3A 18 27 VGS=10V, ID=8A 10 13 VGS=4.5V, ID=7A 11 16 VGS=2.5V, ID=6A 14 22 VGS=1.8V, ID=4.5A 21 35 Forward Transconductance gfs VDS=10V,ID=8A 30 Diode Forward Voltage VSD ISD=1A, VGS=0V 0.72 1.0 4.65 6.05 1.12 1.46 mΩ mΩ S V Switching Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd 3.72 4.84 td(on) 487.6 975.2 800.4 1600.8 1728 3456 6180 12360 Turn-On Time Turn-Off Time tr td(off) VDS=10V, VGS=4.5V, ID=8A VGS=10V, RL=10Ω, VDS=10V, RGEN=3Ω tf nC ns Dynamic Input Capacitance Ciss Output Capacitance REVERSE Transfer Capacitance Coss Crss 36.45 VGS=0V, VDS=10V, f=1MHz 183.88 pF 14.57 VER 1.2 3 ACE8212B Common Drain N-Channel Enhancement Mode Field Effect Transistor with ESD Note: 1. The value of RθJA is measured with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value in any given application depends on the user's specific board design. 2. Repetitive rating, pulse width limited by junction temperature. 3. The current rating is based on the t≤ 10s junction to ambient thermal resistance rating. Typical Performance Characteristics VER 1.2 4 ACE8212B Common Drain N-Channel Enhancement Mode Field Effect Transistor with ESD Typical Performance Characteristics VER 1.2 5 ACE8212B Common Drain N-Channel Enhancement Mode Field Effect Transistor with ESD Typical Performance Characteristics VER 1.2 6 ACE8212B Common Drain N-Channel Enhancement Mode Field Effect Transistor with ESD Packing Information TSSOP-8 Unit: mm VER 1.2 7 ACE8212B Common Drain N-Channel Enhancement Mode Field Effect Transistor with ESD Packing Information DFN2*5 BOTTOM VIEW Unit: mm VER 1.2 8 ACE8212B Common Drain N-Channel Enhancement Mode Field Effect Transistor with ESD Notes ACE does not assume any responsibility for use as critical components in life support devices or systems without the express written approval of the president and general counsel of ACE Electronics Co., LTD. As sued herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and shoes failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ACE Technology Co., LTD. http://www.ace-ele.com/ VER 1.2 9